FAIRCHILD SI6953DQ

Si6953DQ
Dual 20V P-Channel PowerTrench MOSFET
General Description
Features
This P-Channel MOSFET is a rugged gate version of
Fairchild's Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
• –1.9 A, –20 V, RDS(ON) = 170 mΩ @ VGS = –10 V.
RDS(ON) = 320 mΩ @ VGS = –4.5V.
• Extended VGSS range (±20V) for battery applications
Applications
• Low gate charge
• Load switch
• High performance trench technology for extremely
low RDS(ON)
• Battery protection
• DC/DC conversion
• Low profile TSSOP-8 package
• Power management
G2
S2
S2
D2
G1
S1
S1
D1
TSSOP-8
1
8
2
7
3
6
4
5
Pin 1
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
–1.9
A
– Continuous
(Note 1)
– Pulsed
PD
–15
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
1.0
W
0.6
–55 to +150
°C
(Note 1a)
100
°C/W
(Note 1b)
125
Operating and Storage Junction Temperature Range
Thermal Characteristic
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
6953
Si6953DQ
13’’
12mm
2500 units
2001 Fairchild Semiconductor Corporation
Si6953DQ Rev. B (W)
Si6953DQ
September 2001
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
–22
mV/°C
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA, Referenced to 25°C
VDS = –20 V,
VGS = 0 V
–1
IGSSF
Gate–Body Leakage, Forward
VGS = –20 V,
VDS = 0 V
–100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = 20 V,
VDS = 0 V
100
nA
On Characteristics
–20
V
µA
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA, Referenced to 25°C
4
96
151
134
ID(on)
On–State Drain Current
VGS = –10 V,
ID = –1.9 A
VGS = –4.5 V, ID = –1.3 A
VGS = –10 V, ID = –1.9 A, TJ=125°C
VGS = –10 V,
VDS = –5 V
gFS
Forward Transconductance
VDS = –15 V,
ID = –1.9 A
4
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
218
pF
65
pF
31
pF
–1
–1.8
–3
V
mV/°C
170
320
254
–10
mΩ
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
(Note 2)
VDD = –10V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 Ω
6
20
ns
15
25
ns
Turn–Off Delay Time
12
30
ns
tf
Turn–Off Fall Time
1.5
15
ns
trr
Reverse Recovery Time
11
70
ns
Qg
Total Gate Charge
4
10
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VGS = 0 V, IF = 1.5 A,
dIF/dt = 100A/µs
VDS = –10V,
ID = –1.9 A,
VGS = –10 V
0.9
nC
0.7
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –1.25 A
(Note 2)
–0.8
–1.25
A
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
RθJA is 100°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b)
RθJA is 125°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si6953DQ Rev. B (W)
Si6953DQ
Electrical Characteristics
Si6953DQ
Typical Characteristics
12
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.4
VGS = -10V
-6.0V
9
-4.5V
6
-3.5V
3
-3.0V
2.2
VGS = -4.0V
2
1.8
-4.5V
1.6
-5.0V
1.4
-6.0V
-7.0V
1.2
-10V
0.8
0
0
1
2
3
4
5
0
3
-VDS, DRAIN-SOURCE VOLTAGE (V)
6
9
12
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.55
ID = -1.9A
VGS = -10V
ID =-1A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-8.0V
1
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
0.45
0.35
TA = 125oC
0.25
0.15
TA = 25oC
0.05
150
2
4
6
8
10
o
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
TA = -55oC
VDS = -5V
25oC
-ID, DRAIN CURRENT (A)
5
125oC
4
3
2
1
-IS, REVERSE DRAIN CURRENT (A)
6
VGS = 0V
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
0
1
1.5
2
2.5
3
3.5
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si6953DQ Rev. B (W)
Si6953DQ
Typical Characteristics
300
ID = -1.9A
VDS = -5V
f = 1MHz
VGS = 0 V
-10V
250
8
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
-15V
6
4
CISS
200
150
100
2
COSS
50
CRSS
0
0
0
1
2
3
4
5
0
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
20
P(pk), PEAK TRANSIENT POWER (W)
50
100us
10
1ms
RDS(ON) LIMIT
10ms
100ms
1s
1
10s
DC
VGS = -10V
SINGLE PULSE
RθJA = 125oC/W
0.1
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
15
Figure 8. Capacitance Characteristics.
100
-ID, DRAIN CURRENT (A)
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA =125 °C/W
0.2
0.1
0.1
P(pk)
0.05
0.01
t1
0.02
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si6953DQ Rev. B (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET 
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4