FDC699P P-Channel 2.5V PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –7 A, –20 V Applications • Fast switching speed • Battery management • FLMP SuperSOT-6 package: Enhanced thermal • Load Switch • Battery protection RDS(ON) = 22 mΩ @ VGS = –4.5 V RDS(ON) = 30 mΩ @ VGS = –2.5 V • High performance trench technology for extremely low RDS(ON) performance in industry-standard package size G S TM 5 2 S S SuperSOT-6 6 1 S 3 S Bottom Drain 4 FLMP Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current –7 A PD Power Dissipation – Continuous (Note 1a) – Pulsed TJ, TSTG –40 (Note 1a) 2 (Note 1b) 1.5 W –55 to +150 °C (Note 1a) 60 °C/W (Note 1b) 111 Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Case RθJC 0.5 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .699 FDC699P 7’’ 8mm 3000 units 2004 Fairchild Semiconductor Corporation FDC699P Rev C2 (W) FDC699P January 2004 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min ID = –250 µA –20 Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS V Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = – 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA Gate–Body Leakage VGS = ±12 V, VDS = 0 V ±100 nA On Characteristics VGS = 0 V, –12 mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA VDS = VGS, ID = – 250 µA, Referenced to 25°C gFS Forward Transconductance –0.6 –0.9 3 –1.5 V VGS = –4.5 V, ID = –7 A VGS = –2.5 V, ID = –6 A VGS = –4.5 V, ID = –7 A, TJ =125°C 14 21 17 22 30 31 VDS = –5 V, ID = –7 A 30 S VDS = – 10 V, f = 1.0 MHz V GS = 0 V, 2640 pF 560 pF 280 pF VGS = 15 mV, f = 1.0 MHz 3.6 Ω VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 16 28 ns 11 19 ns mV/°C mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 75 120 ns tf Turn–Off Fall Time 41 65 ns Qg Total Gate Charge 27 38 Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –10 V, VGS = –5 V ID = –7 A, nC 5 nC 7 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Notes: 1. Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward IS = –1.6 A VGS = 0 V, Voltage Reverse Recovery Time IF = –7 A, diF/dt = 100 A/µs Reverse Recovery Charge –0.7 (Note 2) –1.6 A –1.2 V 28 ns 14 nC RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 60°C/W when mounted on a 1in2 pad of 2 oz copper b) 111°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDC699P Rev C2 (W) FDC699P Electrical Characteristics FDC699P Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern FDC699P Rev C2 (W) FDC699P Typical Characteristics 40 2.8 -2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V VGS = -4.5V -ID, DRAIN CURRENT (A) -3.5V 30 20 -2.0V 10 0 0.5 1 1.5 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 2.2 2 1.8 1.6 -2.5V 1.4 -3.0V -3.5V 1.2 -4.0V -4.5V 1 0 2.5 Figure 1. On-Region Characteristics. 10 20 -ID, DRAIN CURRENT (A) 30 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 0.05 ID = -3.5A ID = -7A VGS = -4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -2.0V 2.4 0.8 0 1.2 1.1 1 0.9 0.045 0.04 0.035 0.03 TA = 125oC 0.025 0.02 TA = 25oC 0.015 0.01 0.8 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 1 150 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 40 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 2.6 30 20 25oC o TA = 125 C 10 -55oC 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0 0.5 VGS = 0V 10 3 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC699P Rev C2 (W) FDC699P Typical Characteristics 4000 ID = -7A VDS = -5V -15V 3 2 CISS 3000 2500 2000 1500 Coss 1000 1 500 Crss 0 0 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 0 30 Figure 7. Gate Charge Characteristics. 5 10 15 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 8. Capacitance Characteristics. 50 100 P(pk), PEAK TRANSIENT POWER (W) 10µs RDS(ON) LIMIT -ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V 3500 -10V 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 100µs 1ms 10 10ms 10s DC 1 100ms 1s VGS = -4.5V SINGLE PULSE RθJA = 111oC/W 0.1 TA = 25oC 30 20 10 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 111°C/W TA = 25°C 40 0 0.001 100 Figure 9. Maximum Safe Operating Area. 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 111 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC699P Rev C2 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ FACT™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I7