Inchange Semiconductor Product Specification MJ15015 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type MJ15016 ・Excellent safe operating area APPLICATIONS ・For high power audio ,stepping motor and other linear applications ・Relay or solenoid drviers ・DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A IB Base current 7 A PC Collector power dissipation 180 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 0.98 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification MJ15015 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(SUS)CEO Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=0.4A 1.1 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=3.3A 3.0 V VCEsat-3 Collector-emitter saturation voltage IC=15A; IB=7.0A 5.0 V VBE Base-emitter on voltage IC=4A ; VCE=4V 1.8 V ICEO Collector cut-off current VCE=60V; VBE(off)=0 0.1 mA ICEV Collector cut-off current VCE=Rated Value; VBE(off)=1.5V TC=150℃ 1.0 6.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.2 mA hFE-1 DC current gain IC=4A ; VCE=2V 10 70 hFE-2 DC current gain IC=4A ; VCE=4V 20 70 hFE-3 DC current gain IC=10A ; VCE=4V 5 Is/b Second breakdown collector current With base forward biased VCE=60Vdc,t=0.5 s, Nonrepetitive 3.0 COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 60 fT Transition frequency IC=1A ; VCE=4V;f=1.0MHz 0.8 2 MIN TYP. MAX 120 UNIT V A 600 pF MHz Inchange Semiconductor Product Specification MJ15015 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification MJ15015 Silicon NPN Power Transistors 4