SAVANTIC 2N3055A

SavantIC Semiconductor
Product Specification
2N3055A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type MJ2955A
·Excellent Safe Operating Area
APPLICATIONS
·For high power audio ,stepping motor
and other linear applications
·Relay or solenoid drviers
·DC-DC converters inverters
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
15
A
IB
Base current
7
A
PC
Collector power dissipation
115
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
MAX
UNIT
1.52
/W
SavantIC Semiconductor
Product Specification
2N3055A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=4A; IB=0.4A
1.1
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A; IB=3.3A
3.0
V
VCEsat-3
Collector-emitter saturation voltage
IC=15A; IB=7.0A
5.0
V
VBE
Base-emitter on voltage
IC=4A ; VCE=4V
1.8
V
ICEO
Collector cut-off current
VCE=30V; VBE(off)=0
0.7
mA
ICEV
Collector cut-off current
VCE=Rated Value; VBE(off)=1.5V
TC=150
5.0
30
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
5.0
mA
hFE-1
DC current gain
IC=4A ; VCE=2V
10
70
hFE-2
DC current gain
IC=4A ; VCE=4V
20
70
hFE-3
DC current gain
IC=10A ; VCE=4V
5
Is/b
Second breakdown collector current
With base forward biased
VCE=60Vdc,t=0.5 s,
Nonrepetitive
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
60
fT
Transition frequency
IC=1A ; VCE=4V;f=1.0MHz
0.8
60
UNIT
V
1.95
A
600
pF
MHz
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
VCC=30V;IC=4.0A
IB1=IB2=0.4A
tp=25µs; Duty Cycle2%
2
0.5
µs
4.0
µs
3.0
µs
6.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2N3055A
SavantIC Semiconductor
Product Specification
2N3055A
Silicon NPN Power Transistors
4