SavantIC Semiconductor Product Specification 2N3055A Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type MJ2955A ·Excellent Safe Operating Area APPLICATIONS ·For high power audio ,stepping motor and other linear applications ·Relay or solenoid drviers ·DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A IB Base current 7 A PC Collector power dissipation 115 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX UNIT 1.52 /W SavantIC Semiconductor Product Specification 2N3055A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=0.4A 1.1 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=3.3A 3.0 V VCEsat-3 Collector-emitter saturation voltage IC=15A; IB=7.0A 5.0 V VBE Base-emitter on voltage IC=4A ; VCE=4V 1.8 V ICEO Collector cut-off current VCE=30V; VBE(off)=0 0.7 mA ICEV Collector cut-off current VCE=Rated Value; VBE(off)=1.5V TC=150 5.0 30 mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain IC=4A ; VCE=2V 10 70 hFE-2 DC current gain IC=4A ; VCE=4V 20 70 hFE-3 DC current gain IC=10A ; VCE=4V 5 Is/b Second breakdown collector current With base forward biased VCE=60Vdc,t=0.5 s, Nonrepetitive COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 60 fT Transition frequency IC=1A ; VCE=4V;f=1.0MHz 0.8 60 UNIT V 1.95 A 600 pF MHz Switching times resistive load td Delay time tr Rise time ts Storage time tf Fall time VCC=30V;IC=4.0A IB1=IB2=0.4A tp=25µs; Duty Cycle2% 2 0.5 µs 4.0 µs 3.0 µs 6.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2N3055A SavantIC Semiconductor Product Specification 2N3055A Silicon NPN Power Transistors 4