Inchange Semiconductor Product Specification MJ15027 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type MJ15026 ・Excellent safe operating area APPLICATIONS ・For high power audio ,stepping motor and other linear applications ・Relay or solenoid drviers ・DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -200 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -15 A IB Base current -7 A PC Collector power dissipation 250 W Tj Junction temperature 175 ℃ Tstg Storage temperature -65~175 ℃ MAX UNIT 0.98 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification MJ15027 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -200 V VEBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -2.0 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-200V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-5V 25 Transition frequency IC=-0.5A ; VCE=-12V 15 fT CONDITIONS 2 MIN TYP. MAX UNIT 150 MHz Inchange Semiconductor Product Specification MJ15027 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3