SavantIC Semiconductor Product Specification MJ15002 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type MJ15001 ·Excellent safe operating area APPLICATIONS ·For high power audio,disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -5 A IE Emitter current 20 A PD Total power dissipation 250 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX UNIT 0.875 /W SavantIC Semiconductor Product Specification MJ15002 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0 VCE(sat) Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.0 V VBE Base-emitter on voltage IC=-4A ; VCE=-2V -2.0 V ICEO Collector cut-off current VCE=-140V; IB=0 -0.25 mA ICEX Collector cut-off current VCE=-140V; VBE(off)=-1.5V TC=150 -0.1 -2.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-4A ; VCE=-2V 25 VCE=-40Vdc,t=1 s, Nonrepetitive -5 Is/b Second breakdown collector current With base forward biased -140 UNIT V 150 A VCE=-100Vdc,t=1 s, Nonrepetitive COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz fT Transition frequency IC=-0.5A ; VCE=-10V;f=0.5MHz 2 -0.5 1000 2 pF MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 MJ15002