< High-power GaAs FET (small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm High power gain Gp=19dB(TYP.) @f=1.9GHz High power added efficiency add=37%(TYP.) @f=1.9GHz,Pin=12dBm Hermetic Package APPLICATION For UHF Band power amplifiers QUALITY Fig.1 GG RECOMMENDED BIAS CONDITIONS Vds=10V Delivery Ids=300mA Rg=500 -01:Tape & Reel(1K), -03:Trai(50pcs) Absolute maximum ratings Symbol (Ta=25C) Ratings Unit -15 V VGDO Gate to drain breakdown voltage -15 V ID Drain current 800 mA IGR Reverse gate current -2.4 mA IGF Forward gate current 10 mA PT Total power dissipation 6 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C VGSO Parameter Gate to sourcebreakdown voltage Electrical characteristics Symbol (Ta=25C) Parameter Test conditions Limits Unit Min. Typ. Max. IDSS Saturated drain current VDS=3V,VGS=0V - 600 800 mA VGS(off) gm Gate to source cut-off voltage VDS=3V,ID=2.0mA -1 - -5 V Transconductance VDS=3V,ID=300mA - 260 - mS Po add Output power Power added Efficiency VDS=10V,ID=300mA,f=1.9GHz Pin=12dBm 28 - 30 37 - dBm % GLP Linear Power Gain VDS=10V,ID=300mA,f=1.9GHz 17 19 - dB NF Noise figure - 1.2 - dB Rth(ch-c) Thermal Resistance - 17 25 C/W *1:Channel to case / *1 Vf Method Above parameters, ratings, limits are subject to change. Publication Date : Apr., 2011 1 < High-power GaAs FET (small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - matched MGF0919A TYPICAL CHARACTERISTICS VDS=6V ID=0.1A f=1.9GHz Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - matched MGF0919A S PARAMETERS (Ta=25C,VD=10V,ID=300mA, Reference Plane see Fig.1) Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - matched Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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