<C band Internally Matched Power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Crass A operation Internally matched to 50(ohm) High output power: P1dB = 16 W (typ.) @ P1dB High power gain: GLP = 8.0 dB (typ.) High power added efficiency: PAE = 30 % (typ.) APPLICATIONS item 01 : 7.1 – 7.7GHz band power amplifier item 51 : 7.1 – 7.7GHz band digital radio communication QUALITY IG RECOMMENDED BIAS CONDITIONS Vds = 10 V Ids = 4.5 A Rg = 25 Absolute maximum ratings (Ta = 25 C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to source breakdown -15 ID Drain current 12 IGR Reverse gate current -40 IGF Forward gate current 84 PT *1 Total power dissipation 78.9 Tch Channel temperature 175 Tstg Storage temperature - 65 to +175 *1: Tc=25C Unit V V A mA mA W C C Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Electrical characteristics ( Ta = 25° C) Symbol Parameter VGS(off) Gate to sourse cut-off voltage P1dB 1dB gain comp. output power GLP Linear Power Gain IDS (RF) Drain Current at P1dB add Power added efficiency IM3 *2 3rd order IM distortion Test conditions VDS = 3V, ID = 80mA VDS = 10V, ID = 4.5A, f=7.1 – 7.7GHz Min. -2 Limits Typ. -3 Max. -4 41 42 - dBm 7 8 - dB - 4.5 - A - 30 - % -42 -45 - dBc - 1.9 °C/W Rth(ch-c) *3 Thermal resistance Delta Vf Method *2: item -51, 2 tone test, Po=32dBm single carrier level, f=7.7GHz, delta f=10MHz *3 : Channel to case Publication Date : May, 2012 1 Unit V <C band internally matched power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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