< High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0805A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES High output power Po=36.5dBm(TYP.) High power added efficiency P.A.E =50%(TYP.) Hermetic package Designed for use in Class AB linear amplifiers APPLICATION L/S band power amplifiers QUALITY GG Packaging Tape & Reel (1000 pcs) RECOMMENDED BIAS CONDITIONS Vds=10V Ids=400mA Rg=100 Absolute maximum ratings Symbol VDS VGS ID IGR IGF PT*1 Tch Tstg (Ta=25C) Parameter Drain to source voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Ratings Unit 15 -5 2.5 -10 21 21 175 -55 to +150 V V A mA mA W C C *1:Tc=25C Electrical characteristics Symbol (Ta=25C) Parameter Test conditions Limits Min. Unit IDSS Saturated drain current VDS=3V,VGS=0V - 1800 gm Transconductance VDS=3V,ID=400mA - 1000 Max. - VGS(off) Po Gate to source cut-off voltage VDS=3V,ID=10mA -0.5 -1.1 -2 V Output power VDS=10V,ID(RF off)=400mA 35 36.5 - dBm P.A.E. Power added efficiency f=1.9GHz,Pin=22dBm GLP Linear power gain VDS=10V,ID(RF off)=400mA,f=1.9GHz Rth(ch-c) *2 Thermal resistance ΔVf method *2 :Channel-case Specifications are subject to change without notice. Publication Date : Apr., 2011 1 Typ. mA mS - 50 - % 13 14.5 - dB - 5 7 C/W < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A OUTLINE DRAWING Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A S-parameters( Ta=25deg.C , VDS=10(V),IDS=400(mA) ) Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A Example of Circuit Schematic and Characteristics : f=2.6GHz Publication Date : Apr., 2011 4 < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A Example of Circuit Schematic and Characteristics : f=2.6GHz Publication Date : Apr., 2011 5 < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A Example of Circuit Schematic and Characteristics : f=1.9GHz Publication Date : Apr., 2011 6 < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A Example of Circuit Schematic and Characteristics : f=3.5GHz Publication Date : Apr., 2011 7 < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched Keep safety first in your circuit designs! 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