MITSUBISHI MGF0805A_11

< High-power GaAs FET (small signal gain stage) >
MGF0805A
L & S BAND / 4.5W
SMD non - matched
DESCRIPTION
The MGF0805A, GaAs FET with an N-channel schottky
gate, is designed for MMDS/UMTS/WiMAX applications.
FEATURES
 High output power
Po=36.5dBm(TYP.)
 High power added efficiency
P.A.E =50%(TYP.)
 Hermetic package
 Designed for use in Class AB linear amplifiers
APPLICATION
 L/S band power amplifiers
QUALITY
 GG
Packaging
 Tape & Reel (1000 pcs)
RECOMMENDED BIAS CONDITIONS
 Vds=10V
 Ids=400mA
 Rg=100
Absolute maximum ratings
Symbol
VDS
VGS
ID
IGR
IGF
PT*1
Tch
Tstg
(Ta=25C)
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
Unit
15
-5
2.5
-10
21
21
175
-55 to +150
V
V
A
mA
mA
W
C
C
*1:Tc=25C
Electrical characteristics
Symbol
(Ta=25C)
Parameter
Test conditions
Limits
Min.
Unit
IDSS
Saturated drain current
VDS=3V,VGS=0V
-
1800
gm
Transconductance
VDS=3V,ID=400mA
-
1000
Max.
-
VGS(off)
Po
Gate to source cut-off voltage
VDS=3V,ID=10mA
-0.5
-1.1
-2
V
Output power
VDS=10V,ID(RF off)=400mA
35
36.5
-
dBm
P.A.E.
Power added efficiency
f=1.9GHz,Pin=22dBm
GLP
Linear power gain
VDS=10V,ID(RF off)=400mA,f=1.9GHz
Rth(ch-c) *2
Thermal resistance
ΔVf method
*2 :Channel-case
Specifications are subject to change without notice.
Publication Date : Apr., 2011
1
Typ.
mA
mS
-
50
-
%
13
14.5
-
dB
-
5
7
C/W
< High-power GaAs FET (small signal gain stage) >
MGF0805A
L & S BAND / 4.5W
SMD non - matched
MGF0805A OUTLINE DRAWING
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
MGF0805A
L & S BAND / 4.5W
SMD non - matched
MGF0805A S-parameters( Ta=25deg.C , VDS=10(V),IDS=400(mA) )
Publication Date : Apr., 2011
3
< High-power GaAs FET (small signal gain stage) >
MGF0805A
L & S BAND / 4.5W
SMD non - matched
MGF0805A Example of Circuit Schematic and Characteristics : f=2.6GHz
Publication Date : Apr., 2011
4
< High-power GaAs FET (small signal gain stage) >
MGF0805A
L & S BAND / 4.5W
SMD non - matched
MGF0805A Example of Circuit Schematic and Characteristics : f=2.6GHz
Publication Date : Apr., 2011
5
< High-power GaAs FET (small signal gain stage) >
MGF0805A
L & S BAND / 4.5W
SMD non - matched
MGF0805A Example of Circuit Schematic and Characteristics : f=1.9GHz
Publication Date : Apr., 2011
6
< High-power GaAs FET (small signal gain stage) >
MGF0805A
L & S BAND / 4.5W
SMD non - matched
MGF0805A Example of Circuit Schematic and Characteristics : f=3.5GHz
Publication Date : Apr., 2011
7
< High-power GaAs FET (small signal gain stage) >
MGF0805A
L & S BAND / 4.5W
SMD non - matched
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Publication Date : Apr., 2011
8