MITSUBISHI MGF0907B

< High-power GaAs FET (small signal gain stage) >
MGF0907B
L & S BAND / 10W
non - matched
DESCRIPTION
The MGF0907B, GaAs FET with an N-channel schottky
gate, is designed for use in UHF band amplifiers.
FEATURES
 Class A operation
 High output power
P1dB=40.0dBm(TYP.) @f=2.3GHz
 High power gain
GLP=10.0dB(TYP.)
@f=2.3GHz
 High power added efficiency
P.A.E =37%(TYP.)
@f=2.3GHz,P1dB
 Hermetically sealed metal-ceramic package with ceramic lid
APPLICATION
 For UHF Band power amplifiers
QUALITY
 IG
RECOMMENDED BIAS CONDITIONS
 Vds=10V
 Ids=2.4A
 Rg=50
Refer to Bias Procedure
Absolute maximum ratings
Symbol
VGDO
VGSO
ID
IGR
IGF
PT*1
Tch
Tstg
(Ta=25C)
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
Unit
-15
-15
6
-20
42
37.5
175
-65 to +175
V
V
A
mA
mA
W
C
C
*1:Tc=25C
Electrical characteristics
Symbol
(Ta=25C)
Parameter
Test conditions
Limits
Min.
Unit
IDSS
Saturated drain current
VDS=3V,VGS=0V
-
4
gm
Transconductance
VDS=3V,ID=2.2A
-
2
Max.
6
-
VGS(off)
P1dB
Gate to source cut-off voltage
VDS=3V,ID=20mA
-1
-2.5
-4
V
Output power at 1dB gain compression
VDS=10V,ID(RF off)=2.4A
38.5
40
-
dBm
GLP
Linear Power Gain
f=2.3GHz
8
10
-
dB
ID
Drain current
-
2.2
3.0
A
P.A.E.
Power added efficiency
-
37
-
%
Rth(ch-c) *2
Thermal resistance
-
-
4.0
C/W
ΔVf method
*2 :Channel-case
Publication Date : Apr., 2011
1
Typ.
A
S
< High-power GaAs FET (small signal gain stage) >
MGF0907B
L & S BAND / 10W
non - matched
MGF0907B TYPICAL CHARACTERISTICS( Ta=25deg.C )
ID vs. VGS
ID vs. VDS
Po, PAE vs. Pin
(f=2.3GHz)
GLP, P1dB, ID, PAE vs. VDS
(f=2.3GHz)
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
MGF0907B
L & S BAND / 10W
non - matched
MGF0907B S-parameters( Ta=25deg.C , VDS=10(V),IDS=2.4(A) )
S11,S22 vs. f
S21,S12 vs. f
Publication Date : Apr., 2011
3
< High-power GaAs FET (small signal gain stage) >
MGF0907B
L & S BAND / 10W
non - matched
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Publication Date : Apr., 2011
4