< C band internally matched power GaAs FET > MGFC36V5258 5.2 – 5.8 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. Unit : millimeters 21.0 +/-0.3 2MIN (1) (2) 12.9 +/-0.2 Class A operation Internally matched to 50(ohm) system High output power P1dB=4W (TYP.) @f=5.2 – 5.8GHz High power gain GLP=10dB (TYP.) @f=5.2 – 5.8GHz High power added efficiency P.A.E.=32% (TYP.) @f=5.2 – 5.8GHz 0.6 +/-0.15 (2) 2MIN R-1.6 11.3 FEATURES (3) 10.7 APPLICATION 17.0 +/-0.2 0.1 12.0 0.2 4.5 +/-0.4 IG 1.6 QUALITY RECOMMENDED BIAS CONDITIONS VDS=10V ID=1.2A Refer to Bias Procedure RG=100ohm Absolute maximum ratings Symbol Ratings Keep Safety first in your circuit designs! Unit VGDO Gate to drain breakdown voltage -15 V VGSO Gate to source breakdown voltage -15 V ID Drain current 2.8 A IGR Reverse gate current -10 mA mA IGF Forward gate current 21 PT *1 Total power dissipation 25 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. *1 : Tc=25C Symbol (1) GATE (2) SOURCE (FLANGE) (3) DRAIN GF-8 (Ta=25C) Parameter Electrical characteristics 2.6 +/-0.2 5.2 – 5.8 GHz band power amplifier (Ta=25C) Parameter Test conditions Limits Unit Min. Typ. Max. IDSS Saturated drain current VDS=3V,VGS=0V - 2.0 2.8 A gm Transconductance VDS=3V,ID=1.1A - 1 - S VGS(off) P1dB Gate to source cut-off voltage VDS=3V,ID=10mA -2 -3 -4 V Output power at 1dB gain compression VDS=10V,ID(RF off)=1.2A 35 36 - dBm GLP Linear Power Gain f=5.2 – 5.8GHz 9 10 - dB ID Drain current - 1.1 1.4 A P.A.E. Power added efficiency - 33 - % Rth(ch-c) *2 Thermal resistance - - 6 C/W delta Vf method *2 :Channel-case Publication Date : Apr., 2011 1 < C band internally matched power GaAs FET > MGFC36V5258 5.2 – 5.8 GHz BAND / 4W MGFC36V5258 TYPICAL CHARACTERISTICS( Ta=25deg.C ) P1dB,GLP vs. f Po,PAE vs. Pin S11,S22 vs. f S21,S12 vs. f MGFC36V5258 S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.2(A) ) S Parameters(Typ.) f (GHz) S11 S21 S12 S22 Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. 5.2 0.43 13 3.27 138 0.062 156 0.51 -17 5.3 0.30 -3 3.30 122 0.062 138 0.48 -28 5.4 0.19 -41 3.45 105 0.062 120 0.46 -39 5.5 0.18 -99 3.61 89 0.060 102 0.43 -51 5.6 0.28 -152 3.61 73 0.061 78 0.34 -66 5.7 0.39 179 3.45 55 0.059 56 0.26 -80 5.8 0.51 161 3.19 36 0.058 32 0.17 -98 Publication Date : Apr., 2011 2 Angle(deg.) < C band internally matched power GaAs FET > MGFC36V5258 5.2 – 5.8 GHz BAND / 4W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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