< High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25dBm High power gain Gp=13.5dB(TYP.) @f=2.15GHz High power added efficiency add=50%(TYP.) @f=2.15GHz,Pin=25dBm Plastic Mold Lead – less Package APPLICATION For L/S Band power amplifiers QUALITY Fig.1 GG RECOMMENDED BIAS CONDITIONS Vds=10V Delivery Ids=700mA Rg=100 Tape & Reel(1.5K) Absolute maximum ratings Symbol VGSO VGDO ID IGR IGF PT Tch Tstg Gate to source breakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Electrical characteristics Symbol VGS(off) Po *1 add *1 GLP *2 IM3 *3 Rth(ch-c) (Ta=25C) Parameter Ratings Unit -15 -15 3.5 -10 21 20.0 150 -40 to +150 V V A mA mA W C C (Ta=25C) Parameter Test conditions 3rd order Modulation Distortion VDS=3V,ID=12.6mA VDS=10V,ID=700mA,f=2.15GHz *1:Pin=25dBm, *2:Pin=15dB *3:f1=2.15GHz,f2=2.16GHz Po(SCL)=25dBm Thermal Resistance Vf Method Gate to source cut-off voltage Output power Power added Efficiency Linear Power Gain *4:Channel to case / *4 Above parameters, ratings, limits are subject to change. Publication Date : Apr., 2011 1 Limits Min. -1 35.0 11 - Typ. -3 36.5 50 13.5 -42 4.5 Unit Max. -5 6.5 V dBm % dB dBc C/W < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched MGF09152P TYPICAL CHARACTERISTICS Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched MGF09152P TYPICAL CHARACTERISTICS Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched MGF0952P S PARAMETERS (Ta=25C,VD=10V,ID=700mA, Reference Plane see Fig.1) Publication Date : Apr., 2011 4 < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched MGF0952P TEST FIXTURE : f=2.15GHz Publication Date : Apr., 2011 5 < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched Keep safety first in your circuit designs! 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