SANYO CPH6904

CPH6904
Ordering number : ENA1966
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
CPH6904
High-Frequency Low-Noise
Amplifier Applications
Features
•
•
Composite type with 2 J-FET contained in a CPH6 package currently in use, improving the mounting efficiency
greatly
The CPH6904 is formed with two chips, being equivalent to the CPH3910, placed in one package
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSX
VGDS
Gate-to-Source Voltage
Gate Current
Unit
25
V
10
mA
IG
ID
Drain Current
Allowable Power Dissipation
1unit
V
--25
50
mA
400
mW
700
mW
Total Power Dissipation
PD
PT
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7018A-015
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
0.15
6
5
Packing Type: TL
4
Marking
0.9
1
2
0.95
LOT No.
1P
0.05
1.6
0.2
0.6
2.8
0.2
0.6
2.9
TL
3
0.4
1 : Drain1
2 : NC
3 : Drain2
4 : Gate2
5 : Source1/Source2
6 : Gate1
Electrical Connection
6
5
4
1
2
3
SANYO : CPH6
http://semicon.sanyo.com/en/network
11112AC TKIM TC-00002641 No. A1966-1/4
CPH6904
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IGSS
VGS(off)
Gate-to-Source Leakage Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
IDSS
| yfs |
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Noise Figure
NF
Ratings
Conditions
min
typ
IG=--10μA, VDS=0V
VGS=--10V, VDS=0V
--25
VDS=5V, ID=100μA
--0.6
VDS=5V, VGS=0V
20.0
Unit
max
V
--1.0
VDS=5V, VGS=0V, f=1kHz
--1.2
30
VDS=5V, VGS=0V, f=1MHz
nA
--1.8
V
40.0
mA
40
mS
6.0
pF
2.3
VDS=5V, VGS=0V, f=100MHz
pF
2.1
2.8
dB
The specifications shown above are for each individual J-FET.
ID -- VDS
30
20
--0.2V
15
--0.4V
10
--0.6V
Drain Current, ID -- mA
0.5
1.0
1.5
15
--0.6V
10
--1.0V
0
2
4
6
8
10
Drain-to-Source Voltage, VDS -- V
50
VDS=5V
45
IT16678
ID -- VGS
VDS=5V
15
20
mA
20
30
ID
SS =
4
25
mA
25
20
15
10
10
5
5
0
--2.0
--1.5
--1.0
--0.5
0
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
Forward Transfer Admittance, | yfs | -- mS
2
10
7
5
3
2
3
5
7
10
--1.0
2
Drain Current, ID -- mA
3
5
7
100
IT16681
--0.5
0
0.5
IT16680
| yfs | -- IDSS
100
3
2
--1.5
Gate-to-Source Voltage, VGS -- V
IT16679
VDS=5V
f=1kHz
IDSS=30mA
1.0
1.0
0
--2.0
0.5
°C
30
25
0m
A
30
35
Ta=
Drain Current, ID -- mA
35
--25
°C
40
40
5
--0.4V
IT16677
ID -- VGS
50
Drain Current, ID -- mA
20
0
2.0
Drain-to-Source Voltage, VDS -- V
7
--0.2V
25
5
--0.8V
--1.0V
0
0
Forward Transfer Admittance, | yfs | -- mS
30
--0.8V
5
100
VGS=0V
75
°C
Drain Current, ID -- mA
35
V
V GS=0
25
45
ID -- VDS
40
VDS=5V
VGS=0V
f=1kHz
7
5
3
2
10
10
2
3
5
Drain Current, IDSS -- mA
7
100
IT16682
No. A1966-2/4
CPH6904
VGS(off) -- IDSS
10
3
2
1.0
7
5
3
5
3
2
2
0.1
2
10
3
5
7
Drain Current, IDSS -- mA
VGS=0V
f=1MHz
7
5
3
2
1.0
1.0
1.0
1.0
100
IT16683
2
3
5
7
10
2
3
Drain-to-Source Voltage, VDS -- V
5
7
100
IT16685
2
3
5
7
10
2
3
5
Drain-to-Source Voltage, VDS -- V
Crss -- VDS
10
Reverse Transfer Capacitance, Crss -- pF
VGS=0V
f=1MHz
7
Input Capacitance, Ciss -- pF
5
Allowable Power Dissipation, PD, PT -- mW
Cutoff Voltage, VGS(off) -- V
7
Ciss -- VDS
10
VDS=5V
ID=100μA
PD, PT -- Ta
800
700
7 100
IT16684
PT
600
500
400
1unit
300
200
100
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16686
No. A1966-3/4
CPH6904
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to change without notice.
PS No. A1966-4/4