2SK932 Ordering number : EN2841A SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process Large | yfs | Small Ciss Ultralow noise figure Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmer Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage VDSX VGDS Gate Current Drain Current Allowable Power Dissipation Conditions Ratings Unit 15 V --15 V IG 10 mA ID PD 50 mA 200 mW 150 °C --55 to +150 °C Junction Temperature Tj Storage Temperature Tstg Package Dimensions Product & Package Information unit : mm (typ) 7013A-011 • Package : CP • JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB • Minimum Packing Quantity : 3,000 pcs./reel 0.3 0.5 1.5 Packing Type: TB Marking 1 0.95 2 E RANK 1.1 2SK932-22-TB-E 2SK932-23-TB-E 2SK932-24-TB-E LOT No. 0.05 0.1 3 LOT No. 2.5 0.5 2.9 TB 0.4 1 : Source 2 : Drain 3 : Gate Electrical Connection 3 SANYO : CP 1 2 http://www.sanyosemi.com/en/network/ 80812 TKIM/51099TH (KT)/N148MO, TS No.2841-1/6 2SK932 Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDS IGSS IDSS Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage Forward Transfer Admittance VGS(off) | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss Noise Figure NF Ratings Conditions min IG=--10μA, VDS=0V VGS=--10V, VDS=0V typ Unit max --15 VDS=-5V, VGS=0V VDS=5V, ID=100μA V 5.0* VDS=5V, VGS=0V, f=1kHz --0.2 --0.6 25 50 VDS=5V, VGS=0V, f=1MHz VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz --1.0 nA 24.0* mA --1.4 V mS 10 pF 3.0 pF 1.5 dB * : The 2SK932 is classified by IDSS as follows : (unit : mA) Rank IDSS 21 5.0 to 8.5 22 7.3 to 12.0 23 10.0 to 17.0 24 14.5 to 24.0 Ordering Information Package Shipping 2SK932-22-TB-E Device CP 3,000pcs./reel 2SK932-23-TB-E CP 3,000pcs./reel 2SK932-24-TB-E CP 3,000pcs./reel ID -- VDS 16 memo Pb Free ID -- VDS 20 16 Drain Current, ID -- mA VGS=0 10 --0.1V 8 6 --0.2V 4 --0.3V 2 --0.6V 0 0 0.4 0.8 1.2 1.6 Drain-to-Source Voltage, VDS -- V ID -- VGS --0.6 --0.4 --0.2V 0 2.0 --0.3V --0.2 10 0 ITR00900 --0.4V --0.5V 0 2 4 6 8 10 Drain-to-Source Voltage, VDS -- V 0 ITR00899 VGS(off) -- IDSS 2 40 A 0m =2 S mA I DS 15 A m 10 A 5m --0.8 8 --0.6V 20 Gate-to-Source Voltage, VGS -- V --0.1V 4 30 --1.0 12 ITR00898 VDS=5V --1.2 VGS=0 --0.4V --0.5V Cutoff Voltage, VGS(off) -- V 12 Drain Current, ID -- mA Drain Current, ID -- mA 14 VDS=5V ID=100MA --1.0 7 5 3 2 --0.1 3 5 7 10 2 3 5 Saturation Drain Current, IDSS -- mA ITR00901 No.2841-2/6 2SK932 \ yfs \ -- ID 5 S= I DS 3 1 mA 20m 0mA A 2 10 7 5 3 1.0 2 3 5 7 2 10 3 Drain Current, ID -- mA Input Capacitance, Ciss -- pF 10 7 5 3 2 5 7 2 1.0 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V NF -- f 14 5 Crss -- VDS 5 3 2 1.0 7 5 7 NF -- f 14 10 2 3 ITR00905 VDS=5V Rg=1k7 12 Noise Figure, NF -- dB PD -- Ta 240 7 10 8 6 4 A Frequency, f -- Hz 5 100k 2 5 1M ITR00906 5 mA 5 10k 2 3 Drain-to-Source Voltage, VDS -- V 10 2 2 1.0 3m 7 1k 5 ITR00903 VGS=0 f=1MHz 7 2 5 3 A 00 7 k7 2 10 1m =5 1k 10 5 100 2 7 I D= 8 0 10 2 3 ITR00904 10 2 2 5 3 Rg Noise Figure, NF -- dB 12 4 3 Saturation Drain Current, IDSS -- mA VDS=5V ID=10mA 6 5 10 VGS=0 f=1MHz 2 1.0 7 10 5 VDS=5V VGS=0 f=1kHz ITR00902 Ciss -- VDS 3 Allowable Power Dissipation, PD -- mW Forward Transfer Admittance, \ yfs \ -- mS 7 5 \ yfs \ -- IDSS 100 VDS=5V f=1kHz Reverse Transfer Capacitance, Crss -- pF Forward Transfer Admittance, \ yfs \ -- mS 100 0 10 2 5 100 2 5 1k 2 5 10k 2 Frequency, f -- Hz 5 100k 2 5 1M ITR00907 200 160 120 80 40 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- oC 140 160 ITR00908 No.2841-3/6 2SK932 Embossed Taping Specification 2SK932-22-TB-E, 2SK932-23-TB-E, 2SK932-24-TB-E No.2841-4/6 2SK932 Outline Drawing 2SK932-22-TB-E, 2SK932-23-TB-E, 2SK932-24-TB-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.0 0.8 0.95 0.95 No.2841-5/6 2SK932 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2012. Specifications and information herein are subject to change without notice. PS No.2841-6/6