IRFHM8363PbF VDS max ± 20 V 20.4 Qg typ 6.7 S G S G D D nC D D D PQFN Dual 3.3X3.3 mm * A 6 i D * 10 (@Tc(Bottom) = 25°C) mΩ 6 ID ' (@VGS = 4.5V) ' 14.9 (@VGS = 10V) ' ' RDS(on) max V : ,( 9 3 2 7 Vgs 30 HEXFET® Power MOSFET Applications • Power Stage for high frequency buck converters • Battery Protection charge and discharge switches Features and Benefits Features Low Thermal Resistance to PCB (< 6.7°C/W) Low Profile (<1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Orderable part number Package Type IRFHM8363TRPBF IRFHM8363TR2PBF PQFN Dual 3.3mm x 3.3mm PQFN Dual 3.3mm x 3.3mm Benefits Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 400 Tape and Reel Note Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, V GS @ 10V 11 ID @ TA = 70°C Continuous Drain Current, V GS @ 10V 8.6 ID @ TC(Bottom) = 25°C Continuous Drain Current, V GS @ 10V 29 ID @ TC(Bottom) = 100°C Continuous Drain Current, V GS @ 10V 18 ID @ TC = 25°C Continuous Drain Current, V GS @ 10V (Package Limited) hi hi 10i IDM Pulsed Drain Current 116 PD @TA = 25°C Power Dissipation PD @TC(Bottom) = 25°C Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range g c 2.7 19 0.02 -55 to + 150 Units V A W W/°C °C Notes through are on page 9 1 www.irf.com © 2013 International Rectifier May 13, 2013 IRFHM8363PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Drain-to-Source Breakdown Voltage Parameter 30 ––– ––– RDS(on) Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.022 12.2 ––– 14.9 VGS(th) ∆VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient ––– 1.35 ––– 16.3 1.8 -6.3 20.4 2.35 ––– IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 1.0 150 µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 nA VGS = 20V VGS = -20V gfs Qg Forward Transconductance Total Gate Charge Total Gate Charge 20 ––– ––– ––– 15 6.7 ––– ––– ––– S nC VDS = 10V, ID = 10A VGS = 10V, VDS = 15V, ID = 10A Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 2.1 1.0 ––– ––– Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– ––– 2.0 1.6 3.0 ––– ––– ––– Output Charge ––– 7.6 ––– nC Gate Resistance Turn-On Delay Time Rise Time ––– ––– ––– 1.6 14 94 ––– ––– ––– Ω Turn-Off Delay Time Fall Time Input Capacitance ––– ––– ––– 12 33 ––– ––– ––– Output Capacitance Reverse Transfer Capacitance ––– ––– BVDSS ∆ΒVDSS/∆TJ Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss 1165 260 100 Max. Units ––– ––– Conditions VGS = 0V, ID = 250µA V V/°C Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 10A mΩ VGS = 4.5V, ID = 8.0A V VDS = VGS, ID = 25µA mV/°C e e VDS = 15V VGS = 4.5V nC ID = 10A VDS = 24V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 10A ns RG=1.8Ω VGS = 0V pF VDS = 10V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c Max. 29 10 Typ. ––– ––– d Units mJ A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Min. ––– c (Body Diode) Diode Forward Voltage Reverse Recovery Time VSD trr Qrr Reverse Recovery Charge Forward Turn-On Time ton Typ. ––– Max. Units 10 i ––– ––– 116 ––– ––– ––– 17 1.3 26 Conditions MOSFET symbol D A showing the integral reverse V ns p-n junction diode. TJ = 25°C, IS = 10A, VGS = 0V TJ = 25°C, IF = 10A, VDD = 15V di/dt = 280A/µs ––– 24 36 nC Time is dominated by parasitic Inductance G S e e Thermal Resistance RθJC (Top) f Junction-to-Case f RθJA Junction-to-Ambient RθJC (Bottom) RθJA (<10s) 2 Parameter Junction-to-Case g Junction-to-Ambient g www.irf.com © 2013 International Rectifier Typ. ––– ––– ––– ––– Max. Units 6.7 72 °C/W 47 32 May 13, 2013 IRFHM8363PbF 1000 1000 100 BOTTOM 100 10 1 2.5V BOTTOM 10 2.5V 1 ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 0.1 0.1 1 10 0.1 100 1 Fig 1. Typical Output Characteristics 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 Fig 2. Typical Output Characteristics 1000 100 T J = 150°C 10 T J = 25°C VDS = 15V ≤60µs PULSE WIDTH 1.0 1 2 3 4 5 6 ID = 10A VGS = 10V 1.4 1.2 1.0 0.8 0.6 7 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 10000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 10A C oss = C ds + C gd Ciss 1000 Coss Crss 100 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 10 12.0 VDS= 24V VDS= 15V VDS= 6.0V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 VGS 10V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V www.irf.com © 2013 International Rectifier 0 2 4 6 8 10 12 14 16 18 20 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage May 13, 2013 IRFHM8363PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 T J = 150°C 10 T J = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100µsec 1msec 10msec 10 Limited by source bonding technology 1 DC Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.0 0.5 1.0 1.5 2.0 0 2.5 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 30 2.8 i VGS(th) , Gate threshold Voltage (V) Limited by source bonding technology 25 ID, Drain Current (A) i 20 15 10 5 0 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A 1.0 0.8 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 10 D = 0.50 0.20 1 0.10 0.05 0.02 0.01 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2013 International Rectifier May 13, 2013 35 120 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFHM8363PbF ID = 10A 30 25 20 TJ = 125°C 15 T J = 25°C 10 ID 2.3A 4.7A BOTTOM 10A TOP 100 80 60 40 20 0 0 5 10 15 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit 5 I AS 0.01Ω tp www.irf.com © 2013 International Rectifier 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms May 13, 2013 IRFHM8363PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K VCC S Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 www.irf.com © 2013 International Rectifier Qgd Qgodr Fig 18. Gate Charge Waveform May 13, 2013 IRFHM8363PbF PQFN Dual 3.3 x 3.3 Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN Dual 3.3 x 3.3 Part Marking Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2013 International Rectifier May 13, 2013 IRFHM8363PbF PQFN Dual 3.3x3.3 Tape and Reel 8 www.irf.com © 2013 International Rectifier May 13, 2013 IRFHM8363PbF Qualification information† Cons umer Qualification level (per JE DE C JE S D47F Moisture Sensitivity Level †† ††† guidelines ) MS L1 PQFN Dual 3.3mm x 3.3mm ††† (per JE DE C J-S T D-020D RoHS compliant ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.58mH, RG = 50Ω, IAS = 10A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Current is limited to 10A by source bonding technology. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2013 International Rectifier May 13, 2013