MBR40H100WT SWITCHMODE™ Power Rectifier 100 V, 40 A Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total (20 A Per Diode Leg) This is a Pb−Free Device SCHOTTKY BARRIER RECTIFIER 40 AMPERES 100 VOLTS 1 Applications • Power Supply − Output Rectification • Power Management • Instrumentation 2, 4 3 Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 4.3 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO−247AC CASE 340L STYLE 2 MARKING DIAGRAM MAXIMUM RATINGS Please See the Table on the Following Page B40H100 AYWWG B40H100 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2010 March, 2010 − Rev. 4 1 Device Package Shipping MBR40H100WTG TO−247 (Pb−Free) 30 Units/Rail Publication Order Number: MBR40H100WT/D MBR40H100WT MAXIMUM RATINGS (Per Diode Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 100 V Average Rectified Forward Current TC = 148°C, per Diode TC = 150°C, per Device IF(AV) Peak Repetitive Forward Current (Square Wave, 20 kHz) TC = 144°C IFRM 40 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 200 A Operating Junction Temperature (Note 1) TJ +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms WAVAL 400 mJ > 400 > 8000 V 0.58 32 °C/W Controlled Avalanche Energy (see test conditions in Figures 10 and 11) A 20 40 ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Maximum Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Socket Mounted) RqJC RqJA ELECTRICAL CHARACTERISTICS Characterisitc Symbol Instantaneous Forward Voltage (Note 2) (IF = 20 A, TJ = 25°C) (IF = 20 A, TJ = 125°C) (IF = 40 A, TJ = 25°C) (IF = 40 A, TJ = 125°C) vF Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR Min Typ Max − − − − 0.74 0.61 0.85 0.72 0.80 0.67 0.90 0.76 − − 2.0 0.0012 10 0.01 Unit V mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) MBR40H100WT 175°C 150°C 10 25°C 125°C 1.0 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 100 175°C 150°C 10 125°C 1.0 0.1 0 Figure 2. Maximum Forward Voltage 1.0E−01 IR, MAXIMUM REVERSE CURRENT (A) 1.0E−01 IR, REVERSE CURRENT (A) TJ = 125°C 1.0E−04 1.0E−05 1.0E−05 TJ = 25°C 1.0E−06 1.0E−07 1.0E−08 0 20 40 60 80 100 1.0E−08 0 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 32 IF(AV), AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) TJ = 25°C 1.0E−06 1.0E−07 dc 28 Square Wave 20 16 12 8.0 4.0 120 TJ = 125°C 1.0E−03 1.0E−04 0 TJ = 150°C 1.0E−02 TJ = 150°C 1.0E−03 24 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage 1.0E−02 25°C 130 140 150 160 170 180 100 20 RqJA = 16°C/W 18 16 dc 14 12 Square Wave 10 8.0 6.0 4.0 2.0 0 dc RqJA = 60°C/W No Heatsink 0 25 50 Square Wave 75 100 125 150 175 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case, Per Leg Figure 6. Current Derating, Ambient, Per Leg http://onsemi.com 3 R(t), TRANSIENT THERMAL RESISTANCE 10000 30 28 TJ = 25°C TJ = 175°C 24 C, CAPACITANCE (pF) PF(AV), AVERAGE POWER DISSIPATION (W) MBR40H100WT Square Wave 20 dc 16 12 8.0 1000 100 4.0 0 10 4.0 0 8.0 12 16 20 28 30 24 0 40 20 80 60 IF(AV), AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 7. Forward Power Dissipation Figure 8. Capacitance 100 10 1 0.1 D = 0.5 0.2 0.1 0.05 0.01 P(pk) t1 0.01 t2 SINGLE PULSE 0.001 0.000001 0.00001 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 9. Thermal Response Junction−to−Case http://onsemi.com 4 10 100 1000 MBR40H100WT +VDD IL 10 mH COIL BVDUT VD MERCURY SWITCH ID ID IL DUT S1 VDD t0 Figure 10. Test Circuit t1 t2 t Figure 11. Current−Voltage Waveforms elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The unclamped inductive switching circuit shown in Figure 10 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive EQUATION (1): ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 V BV DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 http://onsemi.com 5 Ǔ MBR40H100WT PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE E −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 2: PIN 1. 2. 3. 4. H G DIM A B C D E F G H J K L N P Q U W S INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 ANODE CATHODE (S) ANODE 2 CATHODES (S) SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. 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