MITSUBISHI MGF0909A_11

< High-power GaAs FET (small signal gain stage) >
MGF0909A
L & S BAND / 6W
non - matched
DESCRIPTION
OUTLINE DRAWING
The MGF0909A GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
Unit : m illim eters
FEATURES
①
4.4+0/-0.3
2MIN
 High output power
P1dB=38.0dBm(TYP.) @f=2.3GHz
 High power gain
GLp=11.0dB(TYP.)
@f=2.3GHz
 High power added efficiency
add=45%(TYP.)
@f=2.3GHz,P1dB
 Hermetic Package
②
2MIN
②
φ2.2
0.6±0.2
APPLICATION
 For L/S Band power amplifiers
③
QUALITY
 GG
RECOMMENDED BIAS CONDITIONS
5.0
 Rg=100
0.1
 Ids=1.3A
Symbol
VGSO
(Ta=25C)
Parameter
Gate to sourcebreakdown voltage
VGDO Gate to drain breakdown voltage
9.0±0.2
Ratings
Unit
-15
V
-15
V
5
A
ID
Drain current
IGR
Reverse gate current
-15
mA
IGF
Forward gate current
31.5
mA
PT
Total power dissipation
27.3
W
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-65 to +175
C
Electrical characteristics
Symbol
0.65
Absolute maximum ratings
14.0
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
GF-7
(Ta=25C)
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VGS=0V
-
--
5.0
A
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=10mA
-2.0
-
-5.0
V
gm
Transconductance
VDS=3V,ID=1.3A
-
1.5
-
S
P1dB
Output power 1dB Compression P
VDS=10V,ID=1.3A,f=2.3GHz
37.0
38.0
-
dBm
add
Power added Efficiency
*1
*1:Po=P1dB
-
45
-
%
GLP
Linear Power Gain
*2
*2:Pi=22dBm
10.0
11.0
-
dB
Rth(ch-c)
Thermal Resistance
-
-
9
C/W
*1:Channel to case /
*1
Vf Method
Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
1.9±0.4
1.65
 Vds=10V
< High-power GaAs FET (small signal gain stage) >
MGF0909A
L & S BAND / 6W
non - matched
MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg.C
TC=25deg
TC=75deg
45
90
40
80
35
70
Po
30
60
25
50
GLP(dB)
PAE
20
40
15
30
GP
10
20
5
10
0
0
0
10
20
Pin (dBm)
Publication Date : Apr., 2011
2
30
40
PAE (%)
Pout(dBm)
TC= 0deg
TC= 5 0 de g
< High-power GaAs FET (small signal gain stage) >
MGF0909A
L & S BAND / 6W
non - matched
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It
is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before making
a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
in part these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor
for further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
3