< High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm High power gain Gp=16.5dB(TYP.) @f=2.15GHz High power added efficiency add=40%(TYP.) @f=2.15GHz,Pin=10dBm Plastic Mold Lead – less Package APPLICATION For L/S Band power amplifiers QUALITY Fig.1 GG RECOMMENDED BIAS CONDITIONS Vds=10V Delivery Ids=0.15A Rg=1000 Tape & Reel(1.5K) Absolute maximum ratings Symbol VGSO VGDO ID IGR IGF PT Tch Tstg Gate to source breakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Electrical characteristics Symbol VGS(off) Po *1 add *1 GLP *2 Rth(ch-c) (Ta=25C) Parameter Gate to source cut-off voltage Power added Efficiency Unit -15 -15 0.4 -1.25 5 6.25 150 -40 to +150 V V A mA mA W C C (Ta=25C) Parameter Output power Ratings Test conditions VDS=3V,ID=0.1mA VDS=10V,ID=0.15A,f=2.15GHz *1:Pin=10dBm, *2:Pin=0dB Linear Power Gain Thermal Resistance *3 Vf Method *3:Channel to case Publication Date : Apr., 2011 1 Limits Min. -2 26 16.5 - Typ. 28 40 18 14 Unit Max. -5 20 V dBm % dB C/W < High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched MGF09153P TYPICAL CHARACTERISTICS Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched MGF0953P S PARAMETERS (Ta=25C,VD=10V,ID=0.15A, Reference Plane see Fig.1) Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched Keep safety first in your circuit designs! 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