AMS2304 DESCRIPTION AMS2304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. FEATURE PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 1.Gate 2.Source 30V/3.2A, RDS(ON) = 50m-ohm (Typ.) @VGS = 4.5V 20V/3.1A, RDS(ON) = 65m-ohm @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3.Drain PART MARKING SOT-23-3L 3 04YA 2 1 Y: Year Code A: Process Code 1 Advanced Monolithic Systems http://www.ams-semitech.com AMS2304 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V ID 3.2 2.6 A IDM 10 A Continuous Source Current (Diode Conduction) IS 1.25 A TA=25℃ TA=70℃ PD 1.25 0.8 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature 2 Advanced Monolithic Systems http://www.ams-semitech.com ℃/W AMS2304 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Symbol Condition Min V(BR)DSS VGS=0V,ID=250uA 30 VGS(th) VDS=VGS,ID=250uA 1.0 Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS Parameter Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V 3.0 V VDS=0V,VGS=±20V ±100 nA VDS=30V,VGS=1.0V 1 VDS=30V,VGS=0V TJ=55℃ 10 Drain-source On-Resistance RDS(on) VGS=10V,ID=3.2A VGS=4.5V,ID=2.0A Forward Transconductance gfs VDS=4.5V,ID=2.5V 4.6 Diode Forward Voltage VSD IS=1.25A,VGS=0V 0.82 1.2 4.5 10 0.050 0.058 0.065 0.075 uA Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time VDS=15V VGS=10V ID≡2.5A VDS=15V VGS=0V F=1MHz Crss VDD=15V RL=15Ω ID=1.0A VGEN=10V RG=6Ω tr td(off) tf 3 Advanced Monolithic Systems http://www.ams-semitech.com 0.8 nC 1.0 240 110 pF 17 8.0 20 12 30 17 35 8.0 20 nS AMS2304 TYPICAL CHARACTERICTICS (25℃ Unless noted) 4 Advanced Monolithic Systems http://www.ams-semitech.com AMS2304 TYPICAL CHARACTERICTICS (25℃ Unless noted) 5 Advanced Monolithic Systems http://www.ams-semitech.com AMS2304 SOT-23-3L PACKAGE OUTLINE 6 Advanced Monolithic Systems http://www.ams-semitech.com