ME75N80C / ME75N80C-G N- Channel 80-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME75N80C is the N-Channel logic enhancement mode power ● RDS(ON)≦11mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability minimize on-state resistance. APPLICATIONS PIN ● Power Management CONFIGURATION ● DC/DC Converter (TO-220) ● Load Switch Top View e Ordering Information: ME75N80C (Pb-free) ME75N80C-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current* TC=25℃ TC=70℃ Pulsed Drain Current Power Dissipation ID IDM TC=25℃ TC=70℃ Operating Junction and Storage Temperature Range Thermal Resistance-Junction to Case** PD 110 92 440 268 188 A A W TJ, Tstg -55 to 175 ℃ RθJC 0.56 ℃/W * Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A. ** The device mounted on 1in2 FR4 board with 2 oz copper. Nov, 2010 – Version 4.4 01 ME75N80C / ME75N80C-G N- Channel 80-V (D-S) MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 80 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 4.0 IGSS Gate-Body Leakage IDSS Typ Max Unit STATIC V 6.5 V VDS=0V, VGS=±20V ±100 nA Zero Gate Voltage Drain Current VDS=80V, VGS=0V 1 μA RDS(ON) Drain-Source On-Resistance* VGS=10V, ID=40A 8.5 11 mΩ GFS Forward Transconductance* VDS=15V, ID=40A 10 VSD Diode Forward Voltage * ISD=25A, VGS=0V S 1.5 V DYNAMIC Qg Total Gate Charge 120 Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 140 td(on) Turn-On Delay Time 80 tr Turn-On Rise Time VGS =10V, RL=15Ω 37 td(off) Turn-Off Delay Time VDD=30V, RG=10Ω 140 tf Turn-Off Fall Time VDD=60V, VGS=10V, ID=75A 54 nC 38 VDS=0V, VGS=0V, f=1MHz 2.3 Ω 7400 VDS=20V, VGS=0V, f=1MHz 450 pF ns 27 Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing. b. Matsuki reserves the right to improve product design, functions and reliability without notice. Nov, 2010 – Version 4.4 02 ME75N80C / ME75N80C-G N- Channel 80-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) Nov, 2010 – Version 4.4 03 ME75N80C / ME75N80C-G N- Channel 80-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) Nov, 2010 – Version 4.4 04 ME75N80C / ME75N80C-G N- Channel 80-V (D-S) MOSFET TO-220 Package Outline SYMBOL A A1 A2 b c D D1 D2 E E1 e H1 L ØP Q b2 L1 Nov, 2010 – Version 4.4 MILLIMETERS (mm) MIN 3.500 1.000 2.000 0.500 0.350 14.00 8.382 12.00 9.600 6.858 MAX 4.90 1.40 3.00 1.00 0.65 16.50 9.017 13.00 10.70 8.890 2.540 BSC 5.500 12.50 3.810 2.540 1.100 - 7.50 15.00 3.860 3.048 1.80 7.00 05