i AMS2302 DESCRIPTION AMS2302 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. y y y FEATURE PIN CONFIGURATION SOT-23 3 D G S 1 2 1.Gate 2.Source 20V/3.6A, RDS(ON) = 70mΩ @VGS = 4.5V 20V/3.1A, RDS(ON) = 95 mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3.Drain PART MARKING SOT-23 3 S02YA 2 1 Y: Year Code A: Process Code ORDERING INFORMATION Part Number AMS2302 i Package Part Marking SOT-23 S02YA i ※ Process Code : A ~ Z ; a ~ z 1 Advanced Monolithic Systems http://www.ams-semitech.com AMS2302 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V ID 3.6 2.6 A IDM 10 A Continuous Source Current (Diode Conduction) IS 1.6 A TA=25℃ TA=70℃ PD 1.25 0.8 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature 2 Advanced Monolithic Systems http://www.ams-semitech.com ℃/W AMS2302 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=-250uA 20 VGS(th) VDS=VGS,ID=250uA 0.4 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current IDSS V 1.0 V VDS=0V,VGS=±12V ±100 nA VDS=20V,VGS=0V 1 VDS=20V,VGS=0V TJ=55℃ 10 uA Drain-source On-Resistance RDS(on) VGS=4.5V,ID=3.6A VGS=2.5V,ID=3.1A 0.070 0.095 Ω Forward Transconductance gfs VDS=5V,ID=3.6V 10 S Diode Forward Voltage VSD IS=1.6A,VGS=0V 0.85 1.2 5.4 10 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time VDS=10V VGS=4.5V ID≡3.6A VDS=10V VGS=0V F=1MHz Crss VDD=10V RL=5.5Ω ID=3.6A VGEN=4.5V RG=6Ω tr td(off) tf 3 Advanced Monolithic Systems http://www.ams-semitech.com 0.65 nC 1.4 340 115 pF 33 12 25 36 60 34 60 10 25 nS AMS2302 TYPICAL CHARACTERICTICS (25℃ Unless noted) 4 Advanced Monolithic Systems http://www.ams-semitech.com AMS2302 TYPICAL CHARACTERICTICS (25℃ Unless noted) 5 Advanced Monolithic Systems http://www.ams-semitech.com AMS2302 SOT-23 PACKAGE OUTLINE 6 Advanced Monolithic Systems http://www.ams-semitech.com