ETC STP2301

STP2301
P Channel Enhancement Mode MOSFET
-2.8A
DESCRIPTION
The STP2301 is the P-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone
and notebook computer power management and other batter powered circuits, and
low in-line power loss are needed in a very small outline surface mount package.
FEATURE
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
1.Gate
2.Source
-20V/-2.8A, RDS(ON) = 90m-ohm (Typ.)
@VGS = -4.5V
-20V/-2.0A, RDS(ON) = 110m-ohm
@VGS = -2.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
3.Drain
PART MARKING
SOT-23
3
S01YA
1
Y: Year Code
2
A: Process Code
1
STP2301 2007. V1
86-755-83468588 86-755-83755599
STP2301
P Channel Enhancement Mode MOSFET
-2.8A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
ID
-2.8
-1.5
A
IDM
-10
A
Continuous Source Current (Diode Conduction)
IS
-1.6
A
TA=25℃
TA=70℃
PD
1.25
0.8
W
TJ
150
℃
Storgae Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
120
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Power Dissipation
Operation Junction Temperature
℃/W
2
STP2301 2007. V1
86-755-83468588 86-755-83755599
STP2301
P Channel Enhancement Mode MOSFET
-2.8A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max
V(BR)DSS
VGS=0V,ID=-250uA
-20
VGS(th)
VDS=VGS,ID=-250uA
-0.4
IGSS
Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
IDSS
V
-1.0
V
VDS=0V,VGS=±12V
±100
nA
VDS=-20V,VGS=0V
-1
VDS=-20V,VGS=0V
TJ=55℃
-10
uA
Drain-source On-Resistance
RDS(on)
VGS=-4.5V,ID=-2.8A
VGS=-2.5V,ID=-2.0A
0.090
0.110
Ω
Forward Transconductance
gfs
VDS=-5V,ID=-2.8V
6.5
S
Diode Forward Voltage
VSD
IS=-1.6A,VGS=0V
-0.8
-1.2
4.8
8
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Ciss
Coss
Turn-On Time
td(on)
Turn-Off Time
VDS=-6V
VGS=-4.5V
ID≡-2.8A
VDS=-6V
VGS=0V
F=1MHz
Crss
VDD=-6V
RL=6Ω
ID=-1A
VGEN=-4.5V
RG=6Ω
tr
td(off)
tf
0.75
nC
1.4
35
150
pF
60
10
20
32
45
38
55
30
50
nS
3
STP2301 2007. V1
86-755-83468588 86-755-83755599
STP2301
P Channel Enhancement Mode MOSFET
-2.8A
TYPICAL CHARACTERICTICS (25℃ Unless noted)
4
STP2301 2007. V1
86-755-83468588 86-755-83755599
STP2301
P Channel Enhancement Mode MOSFET
-2.8A
TYPICAL CHARACTERICTICS (25℃ Unless noted)
5
STP2301 2007. V1
86-755-83468588 86-755-83755599
STP2301
P Channel Enhancement Mode MOSFET
-2.8A
TYPICAL CHARACTERICTICS (25℃ Unless noted)
6
STP2301 2007. V1
86-755-83468588 86-755-83755599
STP2301
P Channel Enhancement Mode MOSFET
-2.8A
SOT-23 PACKAGE OUTLINE
7
STP2301 2007. V1
86-755-83468588 86-755-83755599