STP2301 P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STP2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. FEATURE PIN CONFIGURATION SOT-23 3 D G S 1 2 1.Gate 2.Source -20V/-2.8A, RDS(ON) = 90m-ohm (Typ.) @VGS = -4.5V -20V/-2.0A, RDS(ON) = 110m-ohm @VGS = -2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3.Drain PART MARKING SOT-23 3 S01YA 1 Y: Year Code 2 A: Process Code 1 STP2301 2007. V1 86-755-83468588 86-755-83755599 STP2301 P Channel Enhancement Mode MOSFET -2.8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V ID -2.8 -1.5 A IDM -10 A Continuous Source Current (Diode Conduction) IS -1.6 A TA=25℃ TA=70℃ PD 1.25 0.8 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 120 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature ℃/W 2 STP2301 2007. V1 86-755-83468588 86-755-83755599 STP2301 P Channel Enhancement Mode MOSFET -2.8A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max V(BR)DSS VGS=0V,ID=-250uA -20 VGS(th) VDS=VGS,ID=-250uA -0.4 IGSS Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current IDSS V -1.0 V VDS=0V,VGS=±12V ±100 nA VDS=-20V,VGS=0V -1 VDS=-20V,VGS=0V TJ=55℃ -10 uA Drain-source On-Resistance RDS(on) VGS=-4.5V,ID=-2.8A VGS=-2.5V,ID=-2.0A 0.090 0.110 Ω Forward Transconductance gfs VDS=-5V,ID=-2.8V 6.5 S Diode Forward Voltage VSD IS=-1.6A,VGS=0V -0.8 -1.2 4.8 8 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time VDS=-6V VGS=-4.5V ID≡-2.8A VDS=-6V VGS=0V F=1MHz Crss VDD=-6V RL=6Ω ID=-1A VGEN=-4.5V RG=6Ω tr td(off) tf 0.75 nC 1.4 35 150 pF 60 10 20 32 45 38 55 30 50 nS 3 STP2301 2007. V1 86-755-83468588 86-755-83755599 STP2301 P Channel Enhancement Mode MOSFET -2.8A TYPICAL CHARACTERICTICS (25℃ Unless noted) 4 STP2301 2007. V1 86-755-83468588 86-755-83755599 STP2301 P Channel Enhancement Mode MOSFET -2.8A TYPICAL CHARACTERICTICS (25℃ Unless noted) 5 STP2301 2007. V1 86-755-83468588 86-755-83755599 STP2301 P Channel Enhancement Mode MOSFET -2.8A TYPICAL CHARACTERICTICS (25℃ Unless noted) 6 STP2301 2007. V1 86-755-83468588 86-755-83755599 STP2301 P Channel Enhancement Mode MOSFET -2.8A SOT-23 PACKAGE OUTLINE 7 STP2301 2007. V1 86-755-83468588 86-755-83755599