74HCT157 Quad 2−Input Data Selectors / Multiplexers High−Performance Silicon−Gate CMOS The 74HCT157 is identical in pinout to the LS157. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. This device routes 2 nibbles (A or B) to a single port (Y) as determined by the Select input. The data is presented at the outputs in noninverted form. A high level on the Output Enable input sets all four Y outputs to a low level. • • • MARKING DIAGRAMS 16 SOIC−16 D SUFFIX CASE 751B 16 Features • • • • • • • http://onsemi.com 1 Output Drive Capability: 10 LSTTL Loads TTL/NMOS−Compatible Input Levels Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 4.5 to 5.5 V Low Input Current: 1.0 mA High Noise Immunity Characteristic of CMOS Devices In Compliance with the Requirements Defined by JEDEC Standard No. 7A ESD Performance: HBM > 2000 V; Machine Model > 200 V Chip Complexity: 82 FETs or 20.5 Equivalent Gates These are Pb−Free Devices HCT157G AWLYWW 1 16 16 1 TSSOP−16 DT SUFFIX CASE 948F HCT 157 ALYWG G 1 74HCT157 = Device Code A = Assembly Location L, WL = Wafer Lot Y = Year W, WW = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 1 1 Publication Order Number: 74HCT157/D 74HCT157 A0 SELECT 1 16 A0 2 15 B0 3 14 VCC OUTPUT ENABLE A3 Y0 4 13 B3 A1 5 12 Y3 B1 6 11 A2 Y1 7 10 B2 GND 8 9 Y2 NIBBLE A INPUTS A1 A2 A3 B0 NIBBLE B INPUTS B1 B2 B3 SELECT OUTPUT ENABLE Figure 1. Pin Assignment 2 5 11 4 14 7 9 3 12 6 Y0 Y1 Y2 DATA OUTPUTS Y3 10 13 PIN 16 = VCC PIN 8 = GND 1 15 Figure 2. Logic Diagram FUNCTION TABLE Inputs Output Enable Select Outputs Y0 − Y3 H L L X L H L A0 −A3 B0 −B3 X = don’t care A0 − A3, B0 − B3 = the levels of the respective Data−Word Inputs. ORDERING INFORMATION Package Shipping † SOIC−16 (Pb−Free) 2500 Units / Reel TSSOP−16* 2500 Units / Reel Device 74HCT157DR2G 74HCT157DTR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 2 74HCT157 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol Parameter Value Unit – 0.5 to + 7.0 V DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V VCC DC Supply Voltage (Referenced to GND) Vin Vout Iin DC Input Current, per Pin ±20 mA Iout DC Output Current, per Pin ±25 mA ICC DC Supply Current, VCC and GND Pins ±50 mA PD Power Dissipation in Still Air, 500 450 mW Tstg Storage Temperature – 65 to + 150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds (SOIC or TSSOP Package) SOIC Package† TSSOP Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. _C 260 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: − 6.1 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout Parameter DC Supply Voltage (Referenced to GND) Min Max Unit 4.5 5.5 V 0 VCC V – 55 + 125 _C 0 0 0 1000 500 400 ns DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time (Figure 1) VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) −55 to 25°C ≤85°C ≤125°C Unit Vout = 0.1V |Iout| ≤ 20mA 4.5 5.5 2.0 2.0 2.0 2.0 2.0 2.0 V Maximum Low−Level Input Voltage Vout = VCC − 0.1V |Iout| ≤ 20mA 4.5 5.5 0.8 0.8 0.8 0.8 0.8 0.8 V Minimum High−Level Output Voltage Vin = VIL |Iout| ≤ 20mA 4.5 5.5 4.4 5.4 4.4 5.4 4.4 5.4 V 4.5 3.98 3.84 3.70 4.5 5.5 0.1 0.1 0.1 0.1 0.1 0.1 4.5 0.26 0.33 0.40 Parameter VIH Minimum High−Level Input Voltage VIL VOH Condition Vin = VIL VOL Guaranteed Limit VCC (V) Symbol Maximum Low−Level Output Voltage |Iout| ≤ 4.0mA Vin = VIH |Iout| ≤ 20mA Vin = VIH |Iout| ≤ 4.0mA V Iin Maximum Input Leakage Current Vin = VCC or GND 5.5 ±0.1 ±1.0 ±1.0 mA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0mA 5.5 4.0 40 40 mA DICC Additional Quiescent Supply Current Vin = 2.4V, Any One Input Vin = VCC or GND, Other Inputs Iout = 0mA 5.5 ≥ −55°C 25 to 125°C 2.9 2.4 mA 1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). 2. Total Supply Current = ICC + ΣDICC. http://onsemi.com 3 74HCT157 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns) Guaranteed Limit Symbol Parameter VCC (V) – 55 to 25_C v 85_C v 125_C Unit tPLH, tPHL Maximum Propagation Delay, Input A or B to Output Y (Figures 1 and 4) 4.5 21 26 32 ns tPLH, tPHL Maximum Propagation Delay, Select to Output Y (Figures 2 and 4) 4.5 22 28 33 ns tPLH, tPHL Maximum Propagation Delay, Output Enable to Output Y (Figures 3 and 4) 4.5 20 25 30 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 1 and 4) 4.5 15 19 22 ns − 10 10 10 pF Cin Maximum Input Capacitance NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). Typical @ 25°C, VCC = 5.0 V CPD 33 Power Dissipation Capacitance (Per Package)* * Used to determine the no−load dynamic power consumption: PD = CPD VCC ON Semiconductor High−Speed CMOS Data Book (DL129/D). 2f + I http://onsemi.com 4 CC pF VCC . For load considerations, see Chapter 2 of the 74HCT157 PIN DESCRIPTIONS INPUTS A0, A1, A2, A3 (Pins 2, 5, 11, 14) The data present on these pins is in its noninverted form. For the Output Enable input at a high level, the outputs are at a low level. Nibble A inputs. The data present on these pins is transferred to the outputs when the Select input is at a low level and the Output Enable input is at a low level. The data is presented to the outputs in noninverted form. CONTROL INPUTS Select (Pin 1) Nibble select. This input determines the data word to be transferred to the outputs. A low level on this input selects the A inputs and a high level selects the B inputs. B0, B1, B2, B3 (Pins 3, 6, 10, 13) Nibble B inputs. The data present on these pins is transferred to the outputs when the Select input is at a high level and the Output Enable input is at a low level. The data is presented to the outputs in noninverted form. Output Enable (Pin 15) Output Enable input. A low level on this input allows the selected input data to be presented at the outputs. A high level on this input sets all outputs to a low level. OUTPUTS Y0, Y1, Y2, Y3 (Pins 4, 7, 9, 12) Data outputs. The selected input Nibble is presented at these outputs when the Output Enable input is at a low level. SWITCHING WAVEFORMS tr tf 90% 50% 10% INPUT A OR B 90% 50% 10% tPLH 90% 50% 10% OUTPUT Y tf SELECT GND tPHL tPLH tr VCC tTLH tTHL Figure 3. HCT157 tPHL 90% 50% 10% OUTPUT Y tTLH VCC tTHL Figure 4. Y versus Selected, Noninverted tr tf VCC 90% 50% 10% OUTPUT ENABLE GND tPLH tPHL 90% 50% 10% OUTPUT Y tTHL tTLH Figure 5. HCT157 TEST POINT OUTPUT DEVICE UNDER TEST C L* *Includes all probe and jig capacitance Figure 6. Test Circuit http://onsemi.com 5 GND 74HCT157 EXPANDED LOGIC DIAGRAM A0 B0 A1 NIBBLE OUTPUTS B1 A2 B2 A3 B3 OUTPUT ENABLE SELECT 2 4 3 Y0 5 7 6 Y1 11 9 Y2 10 14 12 Y3 13 15 1 http://onsemi.com 6 DATA OUTPUTS 74HCT157 PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K −A− 16 9 1 8 −B− P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 8 PL 0.25 (0.010) B M S G R K F X 45 _ C −T− SEATING PLANE J M D 16 PL 0.25 (0.010) M T B S A S SOLDERING FOOTPRINT* 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 74HCT157 PACKAGE DIMENSIONS TSSOP−16 CASE 948F−01 ISSUE B 16X K REF 0.10 (0.004) 0.15 (0.006) T U T U M S V S K S ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ ÇÇÇ K1 2X L/2 16 9 J1 B −U− L SECTION N−N J PIN 1 IDENT. N 8 1 0.25 (0.010) M 0.15 (0.006) T U S A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. N F DETAIL E −W− C 0.10 (0.004) −T− SEATING PLANE D H G DETAIL E DIM A B C D F G H J J1 K K1 L M SOLDERING FOOTPRINT* 7.06 1 0.65 PITCH 16X 0.36 16X 1.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ 74HCT157 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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