HTSEMI SI2302

SI2302
20V N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@ 4.5V, Ids@ 3.6A
RDS(ON), Vgs@ 2.5V, Ids@ 2.0A
85m Ω
115mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
G
SOT-23
A
B
C
D
E
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
F
0.45
REF.
G
H
K
J
L
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
M
0°
REF.
0.55
S
10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±8
ID
2.3
IDM
8
Continuous Drain Current
Pulsed Drain Current
1)
Maximum Power Dissipation
TA = 25o
2)
TA = 75oC
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
Junction-to-Ambient Thermal Resistance (PCB mounted)
2)
3)
RthJA
Unit
V
A
1.25
W
0.8
o
-55 to 150
100
166
C
o
C/W
Notes
1) Pulse width limited by maximum junction temperature.
2) Surface Mounted on FR4 Board, t v 5 sec.
3) Surface Mounted on FR4 Board.
１
JinYu
semiconductor
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SI2302
20V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Min.
Typ.
Miax.
Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
BVDSS
1)
Forward Transconductance
1)
V
VGS = 4.5V, I D = 3.6A
70
85
VGS = 2.5V, I D = 3.1A
85
115
mΩ
IDSS
VDS =VGS, ID = 250uA
VDS = 16V, V
GS
VDS = 20V, V
Gate Body Leakage
20
RDS(on)
VGS(th)
Zero Gate Voltage Drain Current 0
VGS = 0V, ID = 10uA
0.6
V
1
= 0V
uA
o
GS
= 0V TJ=55
IGSS
VGS = ± 8V, VDS = 0V
gfs
VDS = 5V, I D = 3.6A
C
10
±100
nA
10
S
Dynamic
Total Gate Charge
Qg
5.4
10
VDS = 10V, I D = 3.6A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
1.6
Turn-Off Fall Time
tf
Input Capacitance
Ciss
12
25
36
60
34
60
10
25
VDD = 10V, RL=5.5 Ω
tr
td(off)
nC
0.65
VGS = 4.5V
ID ^ 3.6A,V GEN = 4.5V
RG = 6 Ω
ns
340
VDS = 10V, VGS = 0V
Output Capacitance
Coss
pF
115
f = 1.0 MHz
Reverse Transfer Capacitance
33
Crss
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
1)
IS
VSD
IS = 1.6A, V
GS
= 0V
1.6
A
1.2
V
Pulse test: pulse width <= 300us, duty cycle<= 2%
２
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
SI2302
20V N-Channel Enhancement Mode MOSFET
Output Characteristics
10
Transfer Characteristics
10
VGS = 5 thru 2.5 V
8
2V
I D – Drain Current (A)
I D – Drain Current (A)
8
6
4
2
TC = 125C
4
2
1.5 V
0, 0.5, 1 V
6
25C
–55C
0
0
0
1
2
3
4
5
0
0.5
VDS – Drain-to-Source Voltage (V)
1.0
2.0
2.5
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.15
1000
0.12
800
C – Capacitance (pF)
r DS(on)– On-Resistance ( )
1.5
VGS = 2.5 V
0.09
VGS = 4.5 V
0.06
0.03
600
Ciss
400
Coss
200
Crss
0
0
0
2
4
6
8
10
0
ID – Drain Current (A)
1.8
1.6
4
r DS(on)– On-Resistance ( )
(Normalized)
V GS – Gate-to-Source Voltage (V)
VDS = 10 V
ID = 3.6 A
3
2
1
0
0
1
2
3
4
8
12
16
5
6
7
Qg – Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 3.6 A
1.4
1.2
1.0
0.8
0.6
–50
0
50
100
TJ – Junction Temperature (C)
３
JinYu
semiconductor
20
VDS – Drain-to-Source Voltage (V)
Gate Charge
5
4
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150
SI2302
20V N-Channel Enhancement Mode MOSFET
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
r DS(on)– On-Resistance ( W )
I S – Source Current (A)
10
TJ = 150C
TJ = 25C
0.16
0.12
ID = 3.6 A
0.08
0.04
1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
2
VSD – Source-to-Drain Voltage (V)
Threshold Voltage
0.1
12
10
ID = 250 mA
–0.1
8
TC = 25C
Single Pulse
6
–0.2
4
–0.3
2
–0.4
–50
0
0
50
100
150
0.01
0.10
TJ – Temperature (C)
1.00
10.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
8
Single Pulse Power
14
Power (W)
V GS(th) Variance (V)
6
VGS – Gate-to-Source Voltage (V)
0.2
–0.0
4
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
30
Square Wave Pulse Duration (sec)
４
JinYu
semiconductor
www.htsemi.com
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