HTSEMI XP152A12COMR

XP152A12COMR
20V P-Channel Enhancement Mode MOSFET
VDS= -20V
RDS(ON), [email protected], [email protected]
RDS(ON), [email protected], [email protected]
130mΩ
190mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
G
SOT-23(PACKAGE)
A
B
C
D
E
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
F
0.45
REF.
0.55
S
G
H
K
J
L
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
M
0°
REF.
10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
ID
-2.2
IDM
-8
Continuous Drain Current
Pulsed Drain Current
1)
Maximum Power Dissipation
TA = 25o
2)
TA = 75oC
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
2)
Junction-to-Ambient Thermal Resistance (PCB mounted) 3)
RthJA
Unit
V
A
1.25
W
0.8
o
-55 to 150
100
166
C
o
C/W
Notes
1) Pulse width limited by maximum junction temperature.
2) Surface Mounted on FR4 Board, t v 5 sec.
3) Surface Mounted on FR4 Board.
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semiconductor
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XP152A12COMR
20V P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Min.
VGS = 0V, ID = -250uA
-20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
BVDSS
1)
Drain-Source On-State Resistance
Gate Threshold Voltage
R DS(on)
VGS(th)
Zero Gate Voltage Drain Current 0
IDSS
VGS = -4.5V, ID = -2.8A
105
130
VGS = -2.5V, ID = -2.0A
145
190
mΩ
VDS =VGS, ID = -250uA
-0.45
Forward Transconductance
1)
V
VDS = -20V, V GS = 0V
-1
uA
o
VDS = -20V, V GS = 0V TJ=55
Gate Body Leakage
V
IGSS
VGS = ± 8V, VDS = 0V
gfs
VDS = -5V, ID = -2.8A
C
-10
±100
nA
6.5
S
Dynamic
Total Gate Charge
Gate-Source Charge
Qg
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
5.8
VDS = -6V, ID ^ -2.8A
10
nC
0.85
VGS = -4.5V
1.7
13
25
36
60
42
70
34
60
VDD = -6V, RL=6Ω
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
ID ^ -1.A, VGEN = -4.5V
RG = 6 Ω
ns
415
VDS = -6V, VGS = 0V
Output Capacitance
Coss
pF
223
f = 1.0 MHz
Reverse Transfer Capacitance
87
Crss
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
1)
IS
VSD
IS = -1.6A, VGS = 0V
-0.8
-1.6
A
-1.2
V
Pulse test: pulse width <= 300us, duty cycle<= 2%
２
JinYu
semiconductor
www.htsemi.com
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XP152A12COMR
20V P-Channel Enhancement Mode MOSFET
Output Characteristics_
10
Transfer Characteristics
10
VGS = 5, 4.5, 4, 3.5, 3 V
2.5 V
6
2V
4
2
0, 0.5, 1 V
1.5 V
0
0
1
2
3
TC = - 55_C
8
I D - Drain Current (A)
I D - Drain Current (A)
8
4
25_C
6
125_C
4
2
0
0.0
5
VDS - Drain-to-Source Voltage (V)
2.0
2.5
3.0
800
C - Capacitance (pF)
r DS(on)- On-Resistance ( W )
1.5
Capacitance
1000
0.5
0.4
0.3
VGS = 2.5 V
0.2
VGS = 4.5 V
600
Ciss
400
Coss
Crss
200
0.1
0.0
0
0
2
4
6
8
0
10
ID - Drain Current (A)
1.8
VDS = 6 V
ID = 2.8 A
1.6
r DS(on)- On-Resistance ( W )
(Normalized)
4
3
2
1
0
0
2
4
3
6
9
6
8
Qg - Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 2.8 A
1.4
1.2
1.0
0.8
0.6
- 50
0
50
100
TJ - Junction Temperature (_C)
３
JinYu
semiconductor
12
VDS - Drain-to-Source Voltage (V)
Gate Charge
5
V GS - Gate-to-Source Voltage (V)
1.0
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
0.5
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150
XP152A12COMR
20V P-Channel Enhancement Mode MOSFET
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.6
r DS(on)- On-Resistance ( W )
I S - Source Current (A)
0.5
TJ = 150_C
TJ = 25_C
1
0.4
0.3
ID = 2.8 A
0.2
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1.6
VSD - Source-to-Drain Voltage (V)
6
8
Single Pulse Power
14
12
0.3
0.2
10
ID = 250 mA
Power (W)
VGS(th) Variance (V)
4
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.4
2
0.1
0.0
8
TC = 25_C
Single Pulse
6
4
- 0.1
2
0
- 0.2
- 50
0
50
100
150
0.01
0.10
TJ - Temperature (_C)
1.00
10.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
Single Pulse
10 -3
10 -2
10 -1
1
10
30
Square Wave Pulse Duration (sec)
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semiconductor
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