SECOS STT3981

STT3981
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The STT3981 is universally used for all commercial-industrial applications.
FEATURES
z
z
Low On-Resistance
Low Gate Charge
PACKAGE DIMENSIONS
REF.
Millimeter
Min.
Max.
A
A1
A2
c
D
E
E1
1.10 Max
0
0.10
0.70
1.00
0.12 Ref
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 Ref
0.60 Ref
0°
10°
0.30
0.50
0.95 Ref
1.90 Ref
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
1
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25℃
ID @TA=70℃
IDM
PD @TA=25℃
TJ, TSTG
Ratings
-20
±8
-1.6
-1.3
-8
0.8
0.006
-55 ~ +150
Unit
V
V
A
W
W/℃
℃
Symbol
RθJA
Ratings
150
Unit
℃/W
A
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient3 (Max)
10-Feb-2010 Rev. C
Page 1 of 5
STT3981
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min
Typ Max
Unit
Test Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
V
VGS = 0, ID=250 uA
Gate Threshold Voltage
VGS(th)
-0.4
-
-1.1
V
VDS = VGS, ID=250 uA
Gate Leakage Current
IGSS
-
-
±100
nA
VGS = ±8 V
-
-
-1
-
-
-20
-
100
150
-
160
210
-
260
300
gfs
-
4
-
VSD
-
Drain-Source Leakage Current (Tj=25℃)
Drain-Source Leakage Current (Tj=70℃)
Drain-Source On-Resistance
RDS(ON)
Forward Transconductance
Diode Forward Voltage
IDSS
2
-0.84 -1.1
uA
VDS = -20 V, VGS = 0
VDS = -16 V, VGS = 0
VGS = -4.5 V, ID = -1.9 A
mΩ
VGS = -2.5 V, ID = -1.6 A
VGS = -1.8 V, ID = -0.7 A
S
VDS = -5V, ID = -1.9A
V
IS = -1.0A, VGS = 0V
Dynamic
Total Gate Charge2
Qg
-
6
7.5
Gate-Source Charge
Qgs
-
0.52
-
Gate-Drain (“Miller”) Charge
Qgd
-
1.02
-
Td(on)
-
50
65
Tr
-
40
60
Td(off)
-
168
180
Tf
-
64
75
Input Capacitance
Ciss
-
450
-
Output Capacitance
Coss
-
60
-
Reverse Transfer Capacitance
Crss
-
47
-
Turn-on Delay Time2
Rise Time
Turn-off Time
Fall Time
Notes:
nC
ID = -1.9 A
VDS = -10 V
VGS = -4.5 V
nS
VDS = -10 V
ID = -1 A
VGEN = -4.5 V
RG = 6 Ω
RL = 10 Ω
pF
VGS = 0 V
VDS = -15 V
f = 1.0 MHz
1. Pulse width limited by maximum junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
2
3. Surface mounted on 1 in copper pad of FR4 board; 180 °C/W when mounted on minimum copper pad.
010-Feb-2010 Rev. C
Page 2 of 5
STT3981
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
CHARACTERISTIC CURVES
Output Characteristics
Transfer Characteristics
8
8
VGS = 5 thru 3 V
6
2.5 V
5
4
3
2V
2
1
0
1
2
3
4
25 C
6
125 C
5
4
3
2
1
1.5 V
0
TC = - 55 C
7
I D - Drain Current (A)
I D - Drain Current (A)
7
0
0.0
5
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.6
400
350
VGS = 1.8 V
C - Capacitance (pF)
r DS(on) - On-Resistance (
)
0.5
0.4
0.3
VGS = 2.5 V
0.2
VGS = 4.5 V
0.1
300
250
Ciss
200
150
100
Coss
50
Crss
0.0
0
0
1
2
3
4
5
6
7
0
4
ID - Drain Current (A)
Gate Charg e
1.6
1.4
rDS(on) - On-Resiistance
(Normalized)
VGS - Gate-to -Sou rce Vo ltag e (V)
V DS = 10 V
I D = 1.9 A
4
3
2
16
20
On-Resistance vs. Junction Temperatur e
VGS = 4.5 V
ID = 1.9 A
1.2
1.0
0.8
1
0
12
VDS - Drain-to-Source Voltage (V)
6
5
8
0
1
2
3
4
5
Qg - Total Gate Charge (nC)
10-Feb-2010 Rev. C
6
7
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature ( C)
Page 3 of 5
STT3981
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
Source-Drain Diode Forward Voltage
)
r DS(on) - On-Resistance (
I S - Source Current (A)
1
TJ = 150 C
TJ = 25 C
0.4
ID = 1.9 A
0.3
0.2
0.1
0.0
0.1
0.00
On-Resistance vs. Gate-to-Source Voltage
0.5
10
0.3
0.6
0.9
1.2
0
1.5
1
VSD - Source-to-Drain Voltage (V)
4
5
6
Single Pulse Power, Junction-to-Ambient
25
0.2
20
Power (W)
V GS(th) Variance (V)
Threshold Voltage
ID = 250 A
0.0
- 0.1
- 0.2
- 50
3
VGS - Gate-to-Source Voltage (V)
0.3
0.1
2
15
10
5
0
- 25
0
25
50
75
100
125
150
0.001
0.01
100
10
I D - Drain Current (A)
0.1
1
10
Time (sec)
TJ - Temperature ( C)
Safe Operating Area, Junction-to-Case
IDM
Limited
rDS(on) Limited
1
1 ms
ID(on)
Limited
0.1
10 ms
BVDSS Limited
0.01
0.1
100 ms
TC = 25 C
Single Pulse
1
10
10 s, 1 s
dc
100
VDS - Drain-to-Source Voltage (V)
10-Feb-2010 Rev. C
Page 4 of 5
STT3981
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 132 C/W
0.02
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 -1
1
100
10
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10-Feb-2010 Rev. C
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Page 5 of 5