STT3981 -1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT3981 is universally used for all commercial-industrial applications. FEATURES z z Low On-Resistance Low Gate Charge PACKAGE DIMENSIONS REF. Millimeter Min. Max. A A1 A2 c D E E1 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 Ref 0.60 Ref 0° 10° 0.30 0.50 0.95 Ref 1.90 Ref ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃ TJ, TSTG Ratings -20 ±8 -1.6 -1.3 -8 0.8 0.006 -55 ~ +150 Unit V V A W W/℃ ℃ Symbol RθJA Ratings 150 Unit ℃/W A THERMAL DATA Parameter Thermal Resistance Junction-ambient3 (Max) 10-Feb-2010 Rev. C Page 1 of 5 STT3981 -1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Conditions Static Drain-Source Breakdown Voltage BVDSS -20 - - V VGS = 0, ID=250 uA Gate Threshold Voltage VGS(th) -0.4 - -1.1 V VDS = VGS, ID=250 uA Gate Leakage Current IGSS - - ±100 nA VGS = ±8 V - - -1 - - -20 - 100 150 - 160 210 - 260 300 gfs - 4 - VSD - Drain-Source Leakage Current (Tj=25℃) Drain-Source Leakage Current (Tj=70℃) Drain-Source On-Resistance RDS(ON) Forward Transconductance Diode Forward Voltage IDSS 2 -0.84 -1.1 uA VDS = -20 V, VGS = 0 VDS = -16 V, VGS = 0 VGS = -4.5 V, ID = -1.9 A mΩ VGS = -2.5 V, ID = -1.6 A VGS = -1.8 V, ID = -0.7 A S VDS = -5V, ID = -1.9A V IS = -1.0A, VGS = 0V Dynamic Total Gate Charge2 Qg - 6 7.5 Gate-Source Charge Qgs - 0.52 - Gate-Drain (“Miller”) Charge Qgd - 1.02 - Td(on) - 50 65 Tr - 40 60 Td(off) - 168 180 Tf - 64 75 Input Capacitance Ciss - 450 - Output Capacitance Coss - 60 - Reverse Transfer Capacitance Crss - 47 - Turn-on Delay Time2 Rise Time Turn-off Time Fall Time Notes: nC ID = -1.9 A VDS = -10 V VGS = -4.5 V nS VDS = -10 V ID = -1 A VGEN = -4.5 V RG = 6 Ω RL = 10 Ω pF VGS = 0 V VDS = -15 V f = 1.0 MHz 1. Pulse width limited by maximum junction temperature. 2. Pulse width≦300us, duty cycle≦2%. 2 3. Surface mounted on 1 in copper pad of FR4 board; 180 °C/W when mounted on minimum copper pad. 010-Feb-2010 Rev. C Page 2 of 5 STT3981 -1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente CHARACTERISTIC CURVES Output Characteristics Transfer Characteristics 8 8 VGS = 5 thru 3 V 6 2.5 V 5 4 3 2V 2 1 0 1 2 3 4 25 C 6 125 C 5 4 3 2 1 1.5 V 0 TC = - 55 C 7 I D - Drain Current (A) I D - Drain Current (A) 7 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.6 400 350 VGS = 1.8 V C - Capacitance (pF) r DS(on) - On-Resistance ( ) 0.5 0.4 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 0.1 300 250 Ciss 200 150 100 Coss 50 Crss 0.0 0 0 1 2 3 4 5 6 7 0 4 ID - Drain Current (A) Gate Charg e 1.6 1.4 rDS(on) - On-Resiistance (Normalized) VGS - Gate-to -Sou rce Vo ltag e (V) V DS = 10 V I D = 1.9 A 4 3 2 16 20 On-Resistance vs. Junction Temperatur e VGS = 4.5 V ID = 1.9 A 1.2 1.0 0.8 1 0 12 VDS - Drain-to-Source Voltage (V) 6 5 8 0 1 2 3 4 5 Qg - Total Gate Charge (nC) 10-Feb-2010 Rev. C 6 7 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature ( C) Page 3 of 5 STT3981 -1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente Source-Drain Diode Forward Voltage ) r DS(on) - On-Resistance ( I S - Source Current (A) 1 TJ = 150 C TJ = 25 C 0.4 ID = 1.9 A 0.3 0.2 0.1 0.0 0.1 0.00 On-Resistance vs. Gate-to-Source Voltage 0.5 10 0.3 0.6 0.9 1.2 0 1.5 1 VSD - Source-to-Drain Voltage (V) 4 5 6 Single Pulse Power, Junction-to-Ambient 25 0.2 20 Power (W) V GS(th) Variance (V) Threshold Voltage ID = 250 A 0.0 - 0.1 - 0.2 - 50 3 VGS - Gate-to-Source Voltage (V) 0.3 0.1 2 15 10 5 0 - 25 0 25 50 75 100 125 150 0.001 0.01 100 10 I D - Drain Current (A) 0.1 1 10 Time (sec) TJ - Temperature ( C) Safe Operating Area, Junction-to-Case IDM Limited rDS(on) Limited 1 1 ms ID(on) Limited 0.1 10 ms BVDSS Limited 0.01 0.1 100 ms TC = 25 C Single Pulse 1 10 10 s, 1 s dc 100 VDS - Drain-to-Source Voltage (V) 10-Feb-2010 Rev. C Page 4 of 5 STT3981 -1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 132 C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 -1 1 100 10 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10-Feb-2010 Rev. C 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Page 5 of 5