MOSFET SMD Type P-Channel MOSFET SI2305DS-HF (KI2305DS-HF) SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 1 ● RDS(ON)＜0.071 Ω (VGS = -2.5V) 0.55 ● RDS(ON)＜0.052 Ω (VGS = -4.5V) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ■ Features ● VDS (V) = -8V 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 +0.2 1.1 -0.1 ● RDS(ON)＜0.108 Ω (VGS = -1.8V) ● Pb−Free Package May be Available. The G−Suffix Denotes a 1. Gate 0-0.1 D +0.1 0.68 -0.1 Pb−Free Lead Finish 2. Source 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-source voltage VDS -8 V Gate-source voltage VGS ±8 V ID -3.5 -2.8 A IDM -12 A PD 1.25 0.8 W RθJA 130 ℃/W Tj,Tstg -55 to +150 ℃ Continuous drain current -- TA=25℃ TA=70℃ Pulsed drain current Power dissipation -- TA=25℃ TA=70℃ Thermal Resistance.Junction-to-Ambient Operating junction and storage temperature range www.kexin.com.cn 1 SMD SMD Type Type MOSFET P-Channel MOSFET SI2305DS-HF (KI2305DS-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current IDSS Gate-body leakage IGSS Drain-source on-state resistance On-state drain current rDS(on) ID(on) Forward transconductance gfs Input capacitance * Ciss VGS = 0 V, ID = -250μA VDS = VGS, ID = -250 μA Min Typ Max Unit -0.8 V -8 V -0.45 VDS = -6.4 V, VGS = 0 V -1 VDS = -6.4 V, VGS = 0 V, TJ = 55 ℃ -10 VDS = 0 V, VGS = ±8 V ±100 VGS = -4.5 V, ID = -3.5 A 0.052 VGS = -2.5 V, ID = -3.0 A 0.071 VGS = -1.8 V, ID = -2.0 A 0.108 VDS ≤ -5 V, VGS = -4.5 V -6 VDS ≤ -5 V, VGS = -2.5 V -3 VDS = -5 V, ID = -3.5 A 8.5 VDS = -4V ,VGS = 0 , f = 1 MHz Crss 210 Total gate charge * Qg 10 VDS = -4V ,VGS = -4.5 V , ID= -3.5 A pF 15 nC 2 Gate-source charge * Qgs Gate-drain charge * Qgd 2 Turn-on Delay time td(on) 13 20 25 40 55 80 19 35 tr td(off) Continuous source current (diode conduction) * ■ Marking A5* F www.kexin.com.cn -1.6 IS VSD * Pulse test: PW ≤ 300 μs duty cycle ≤ 2%. Marking VDD = -4V , RL = 4Ω , ID = -1A , VGEN =- 4.5V , RG = 6Ω tf Diode forward voltage Ω S 375 Coss Turn-on Reise time nA 1245 Output capacitance * Turn-off Dealy time μA A Reverse transfer capacitance * Turn-off Fall time 2 VDSS VGS(th) Testconditions IS = -1.6 A, VGS = 0 V ns A -1.2 V SMD Type MOSFET P-Channel MOSFET SI2305DS-HF (KI2305DS-HF) ■ Typical Characteristics Output Characteristics 12 Transfer Characteristics 12 VGS = 4.5 thru 2.5 V 。 2V 10 TC = –55 C 10 8 I D – Drain Current (A) I D – Drain Current (A) 25。 C 6 1.5 V 4 2 8 。 125 C 6 4 2 1, 0.5 V 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 VDS – Drain-to-Source Voltage (V) 2.5 1600 C – Capacitance (pF) r DS(on) – On-Resistance ( Ω) 2.0 Capacitance 2000 0.25 0.20 0.15 VGS = 1.8 V 0.10 VGS = 2.5 V Ciss 1200 800 Coss 400 0.05 Crss VGS = 4.5 V 0 0 2 4 6 8 10 0 0 12 2 ID – Drain Current (A) 1.4 r DS(on) – On-Resistance (Ω) (Normalized) VDS = 4 V ID = 3.5 A 4 3 2 1 0 0 2 4 6 Qg – Total Gate Charge (nC) 4 6 8 VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) 1.5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.30 1.0 8 10 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.5 A 1.2 1.0 0.8 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (。 C) www.kexin.com.cn 3 SMD SMD Type Type MOSFET ■ Typical Characterisitics P-Channel MOSFET SI2305DS-HF (KI2305DS-HF) Source-Drain Diode Forward Voltage 30 0.4 r DS(on) – On-Resistance (Ω) I S – Source Current (A) 10 TJ = 150。 C TJ = 25。 C 1 On-Resistance vs. Gate-to-Source Voltage 0.5 0.3 0.2 ID = 3.5 A 0.1 0 0.1 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD – Source-to-Drain Voltage (V) 4 6 8 VGS – Gate-to-Source Voltage (V) Single Pulse Power Threshold Voltage 0.4 12 ID = 250 A 0.3 10 8 0.2 Power (W) V GS(th) Variance (V) 2 0.1 6 0.0 4 –0.1 2 –0.2 –50 –25 0 25 50 75 100 125 TA = 25。 C 0 150 0.01 TJ – Temperature ( 。 C) 0.1 1 10 100 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 。 2. Per Unit Base = RthJA = 130 C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 4 www.kexin.com.cn 10 100 500 500