ETC GF2303A

GF2303A
P-Channel Enhancement-Mode MOSFET
TO-236AB (SOT-23)
t
c
u
d
o
r
P
H
C
w
e
N
N
TREENFET
Top View
G
®
.118 (3.0)
.110 (2.8)
.020 (0.51)
.015 (0.37)
.055 (1.40)
.047 (1.20)
3
Pin Configuration
0.035 (0.9)
0.079 (2.0)
0.037 (0.95)
0.037 (0.95)
Dimensions in inches
and (millimeters)
.098 (2.5)
.091 (2.3)
.020 (0.51) .020 (0.51)
.015 (0.37) .015 (0.37)
Mounting Pad Layout
.047 (1.20)
.035 (0.90)
.007 (.180)
.003 (.085)
.041 (1.03) .041 (1.03)
.035 (0.89) .035 (0.89)
0.031 (0.8)
1. Gate
2. Source
3. Drain
2
max. .004 (0.1)
1
VDS –30V RDS(ON) 0.12Ω ID –2.5A
Mechanical Data
Features
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 3A
• Advanced Trench Process Technology
• High density cell design for ultra-low on-resistance
• Popular SOT-23 package with copper lead frame
for superior thermal and electrical capabilities
• Compact and low profile
Maximum Ratings and Thermal Characteristics
Parameter
Drain-Source Voltage
Gate-Source-Voltage
Continuous Drain Current
TJ = 150°C
(2)
TA = 25°C
TA = 70°C
Pulsed Drain Current (1)
Maximum Power Dissipation (2)
TA = 25°C
TA = 70°C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient Thermal Resistance
(2)
(TA = 25°C unless otherwise noted)
Symbol
Limit
Unit
VDS
–30
V
VGS
± 20
V
ID
–2.5
–2.0
A
IDM
–10
A
PD
1.25
0.8
W
TJ, Tstg
–55 to +150
°C
RθJA
100
°C/W
Note:
(1) Pulse width limited by maximum junction temperature.
(2) Surface mounted on FR4 board, t ≤ 5 sec.
8/2/01
GF2303A
P-Channel Enhancement-Mode MOSFET
Electrical Characteristics (T
Parameter
J
= 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = –250µA
–30
–
–
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250µA
–1.0
–
–
V
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ± 20V
–
–
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = –30V, VGS = 0V
–
–
–1.0
µA
VDS = –30V, VGS = 0V, TJ = 55°C
—
—
–10
VDS ≥ –5V, VGS = –10V
–6
–
–
VGS = –10V, ID = –2.5A
–
100
120
VGS = –4.5V, ID = –2.0A
–
150
180
VDS = –10V, ID = –2.5A
–
4.8
–
–
7.8
12
–
1.0
–
–
1.3
–
–
4
20
–
3
20
–
68
90
–
30
50
–
370
–
–
60
–
–
35
–
Static
On-State Drain Current(1)
ID(on)
Drain-Source On-State Resistance(1)
RDS(on)
Forward Transconductance(1)
gfs
A
mΩ
S
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = –15V, VGS = –10V
ID = –2.5A
VDD = –15V, RL = 15Ω
ID = –1A, VGEN = –10V
RG = 6Ω
VDS = –15V, VGS = 0V
f = 1.0MHZ
nC
ns
pF
Source-Drain Diode
Maximum Diode Forward Current
Diode Forward Voltage
IS
–
–
–
–1.25
A
VSD
IS = –1.25A, VGS = 0V
–
–1.0
–1.2
V
Note:
(1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
Switching
Test Circuit
Switching
Waveforms
VDD
ton
RD
VIN
td(on)
td(off)
tf
90 %
90%
Output, VOUT
RG
tr
VOUT
D
VGEN
toff
10%
10%
DUT
G
90%
50%
S
Input, VIN
50%
10%
INVERTED
PULSE WIDTH
GF2303A
P-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 2 – Transfer Characteristics
Fig. 1 – Output Characteristics
10
VGS =
--10.0V,
--8.0V,
8
--7.0V,
--6.0V
--55°C
VDS = --10V
--4.5V
25°C
8
-- ID -- Drain Current (A)
--ID -- Drain-to-Source Current (A)
10
--5.0V
--4.0V
6
--3.5V
4
--3.0V
TJ = 125°C
6
4
2
2
--2.5V
0
0
0
1
2
3
4
5
0
3
4
5
Fig. 3 – Threshold Voltage
vs. Temperature
Fig. 4 – On-Resistance
vs. Drain Current
6
0.8
ID = --250µA
1.1
RDS(ON) -- On-Resistance (Ω)
--VGS(th) -- Gate-to-Source
Threshold Voltage (V) (Normalized)
2
-- VGS -- Gate-to-Source Voltage (V)
1.2
1.0
0.9
0.8
0.7
0.6
VGS = --4.5V
0.4
0.2
VGS = --10.0V
0
0.6
--50
--25
0
25
50
75
100
125
0
150
2
4
6
8
TJ -- Junction Temperature (°C)
-- ID -- Drain Current (A)
Fig. 5 – On-Resistance
vs. Junction Temperature
Fig. 6 – On-Resistance
vs. Gate-to-Source Voltage
1.6
10
0.6
VGS = --10.0V
ID = --2.5A
ID = -- 2.5A
RDS(ON) -- On-Resistance (Ω)
RDS(ON) -- On-Resistance
(Normalized)
1
--VDS -- Drain-to-Source Voltage (V)
1.4
1.2
1
0.8
0.5
0.4
0.3
TJ = 125°C
0.2
0.1
TJ = 25°C
0.6
--50
0
--25
0
25
50
75
100
TJ -- Junction Temperature (°C)
125
150
2
3
4
5
6
7
8
-- VGS -- Gate-to-Source Voltage (V)
9
10
GF2303A
P-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 8 – Capacitance
Fig. 7 – Gate Charge
500
VDS = --10V
ID = --2.5A
f = 1MHz
VGS = 0V
8
400
C -- Capacitance (pF)
-- VGS -- Gate-to-Source Voltage (V)
10
6
4
Ciss
300
200
2
100
0
0
0
1
2
3
5
4
6
7
8
5
20
25
30
Fig. 9 – Source-Drain Diode
Forward Voltage
Fig. 10 – Thermal Transient Impedance
Junction-to-Ambient
1
D = 0.5
RθJA (norm) -- Normalized Thermal
Impedance
25°C
--55°C
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.2
0.1
0.1
PDM
0.05
0.02
t1
1. Duty Cycle, D = t1/t2
2. RθJA (t) = RθJA(norm) *RθJA
3. RθJA = 100°C/W
4. TJ - TA = PDM * RθJA (t)
Single Pulse
0.001
0.0001 0.001
2.0
t2
0.01
0.01
0.01
0.1
1
10
100
Pulse Duration (sec.)
--VSD -- Source-to-Drain Voltage (V)
Fig. 11 – Power vs. Pulse Duration
Fig. 12 – Maximum Safe Operating Area
20
100
Single Pulse
RθJA = 100°C/W
TA = 25°C
-- ID -- Drain Current (A)
15
Power (W)
15
--VDS -- Drain-to-Source Voltage (V)
TJ = 125°C
10
5
0
0.001
10
Qg -- Total Gate Charge (nC)
VGS = 0V
--IS -- Source Current (A)
Crss
0
10
0.1
0.2
Coss
10
0µ
s
10
1m
10
1
10
ms
0m
s
s
RDS(ON) Limit
1s
0.1
DC
VGS = --10V
Single Pulse
RθJA = 100°C/W
TA = 25°C
0.01
0.01
0.1
1
Pulse Duration (sec.)
10
100
0.1
1
10
-- VDS -- Drain-Source Voltage (V)
100