GF2303A P-Channel Enhancement-Mode MOSFET TO-236AB (SOT-23) t c u d o r P H C w e N N TREENFET Top View G ® .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) .055 (1.40) .047 (1.20) 3 Pin Configuration 0.035 (0.9) 0.079 (2.0) 0.037 (0.95) 0.037 (0.95) Dimensions in inches and (millimeters) .098 (2.5) .091 (2.3) .020 (0.51) .020 (0.51) .015 (0.37) .015 (0.37) Mounting Pad Layout .047 (1.20) .035 (0.90) .007 (.180) .003 (.085) .041 (1.03) .041 (1.03) .035 (0.89) .035 (0.89) 0.031 (0.8) 1. Gate 2. Source 3. Drain 2 max. .004 (0.1) 1 VDS –30V RDS(ON) 0.12Ω ID –2.5A Mechanical Data Features Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: 3A • Advanced Trench Process Technology • High density cell design for ultra-low on-resistance • Popular SOT-23 package with copper lead frame for superior thermal and electrical capabilities • Compact and low profile Maximum Ratings and Thermal Characteristics Parameter Drain-Source Voltage Gate-Source-Voltage Continuous Drain Current TJ = 150°C (2) TA = 25°C TA = 70°C Pulsed Drain Current (1) Maximum Power Dissipation (2) TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance (2) (TA = 25°C unless otherwise noted) Symbol Limit Unit VDS –30 V VGS ± 20 V ID –2.5 –2.0 A IDM –10 A PD 1.25 0.8 W TJ, Tstg –55 to +150 °C RθJA 100 °C/W Note: (1) Pulse width limited by maximum junction temperature. (2) Surface mounted on FR4 board, t ≤ 5 sec. 8/2/01 GF2303A P-Channel Enhancement-Mode MOSFET Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = –250µA –30 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250µA –1.0 – – V Gate-Body Leakage IGSS VDS = 0V, VGS = ± 20V – – ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = –30V, VGS = 0V – – –1.0 µA VDS = –30V, VGS = 0V, TJ = 55°C — — –10 VDS ≥ –5V, VGS = –10V –6 – – VGS = –10V, ID = –2.5A – 100 120 VGS = –4.5V, ID = –2.0A – 150 180 VDS = –10V, ID = –2.5A – 4.8 – – 7.8 12 – 1.0 – – 1.3 – – 4 20 – 3 20 – 68 90 – 30 50 – 370 – – 60 – – 35 – Static On-State Drain Current(1) ID(on) Drain-Source On-State Resistance(1) RDS(on) Forward Transconductance(1) gfs A mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = –15V, VGS = –10V ID = –2.5A VDD = –15V, RL = 15Ω ID = –1A, VGEN = –10V RG = 6Ω VDS = –15V, VGS = 0V f = 1.0MHZ nC ns pF Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage IS – – – –1.25 A VSD IS = –1.25A, VGS = 0V – –1.0 –1.2 V Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% Switching Test Circuit Switching Waveforms VDD ton RD VIN td(on) td(off) tf 90 % 90% Output, VOUT RG tr VOUT D VGEN toff 10% 10% DUT G 90% 50% S Input, VIN 50% 10% INVERTED PULSE WIDTH GF2303A P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 10 VGS = --10.0V, --8.0V, 8 --7.0V, --6.0V --55°C VDS = --10V --4.5V 25°C 8 -- ID -- Drain Current (A) --ID -- Drain-to-Source Current (A) 10 --5.0V --4.0V 6 --3.5V 4 --3.0V TJ = 125°C 6 4 2 2 --2.5V 0 0 0 1 2 3 4 5 0 3 4 5 Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 6 0.8 ID = --250µA 1.1 RDS(ON) -- On-Resistance (Ω) --VGS(th) -- Gate-to-Source Threshold Voltage (V) (Normalized) 2 -- VGS -- Gate-to-Source Voltage (V) 1.2 1.0 0.9 0.8 0.7 0.6 VGS = --4.5V 0.4 0.2 VGS = --10.0V 0 0.6 --50 --25 0 25 50 75 100 125 0 150 2 4 6 8 TJ -- Junction Temperature (°C) -- ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 1.6 10 0.6 VGS = --10.0V ID = --2.5A ID = -- 2.5A RDS(ON) -- On-Resistance (Ω) RDS(ON) -- On-Resistance (Normalized) 1 --VDS -- Drain-to-Source Voltage (V) 1.4 1.2 1 0.8 0.5 0.4 0.3 TJ = 125°C 0.2 0.1 TJ = 25°C 0.6 --50 0 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150 2 3 4 5 6 7 8 -- VGS -- Gate-to-Source Voltage (V) 9 10 GF2303A P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 8 – Capacitance Fig. 7 – Gate Charge 500 VDS = --10V ID = --2.5A f = 1MHz VGS = 0V 8 400 C -- Capacitance (pF) -- VGS -- Gate-to-Source Voltage (V) 10 6 4 Ciss 300 200 2 100 0 0 0 1 2 3 5 4 6 7 8 5 20 25 30 Fig. 9 – Source-Drain Diode Forward Voltage Fig. 10 – Thermal Transient Impedance Junction-to-Ambient 1 D = 0.5 RθJA (norm) -- Normalized Thermal Impedance 25°C --55°C 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.2 0.1 0.1 PDM 0.05 0.02 t1 1. Duty Cycle, D = t1/t2 2. RθJA (t) = RθJA(norm) *RθJA 3. RθJA = 100°C/W 4. TJ - TA = PDM * RθJA (t) Single Pulse 0.001 0.0001 0.001 2.0 t2 0.01 0.01 0.01 0.1 1 10 100 Pulse Duration (sec.) --VSD -- Source-to-Drain Voltage (V) Fig. 11 – Power vs. Pulse Duration Fig. 12 – Maximum Safe Operating Area 20 100 Single Pulse RθJA = 100°C/W TA = 25°C -- ID -- Drain Current (A) 15 Power (W) 15 --VDS -- Drain-to-Source Voltage (V) TJ = 125°C 10 5 0 0.001 10 Qg -- Total Gate Charge (nC) VGS = 0V --IS -- Source Current (A) Crss 0 10 0.1 0.2 Coss 10 0µ s 10 1m 10 1 10 ms 0m s s RDS(ON) Limit 1s 0.1 DC VGS = --10V Single Pulse RθJA = 100°C/W TA = 25°C 0.01 0.01 0.1 1 Pulse Duration (sec.) 10 100 0.1 1 10 -- VDS -- Drain-Source Voltage (V) 100