MBRAF1540T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.5 AMPERE 40 VOLTS Low Profile Package for Space Constrained Applications Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction 150°C Operating Junction Temperature Guard−Ring for Stress Protection These are Pb−Free and Halide−Free Devices Mechanical Charactersistics • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal SMA−FL CASE 403AA STYLE 6 Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • • 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B MARKING DIAGRAM AYWW RAEG G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 100°C) IO 1.5 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 130°C) IFRM 3.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Tstg, TC −55 to +150 °C TJ −55 to +150 °C dv/dt 10,000 V/ms Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 0 1 RAE = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRAF1540T3G SMA−FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MBRAF1540/D MBRAF1540T3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) Symbol Value RqJL 25 RqJA 90 Symbol Value Unit °C/W 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic vF Maximum Instantaneous Forward Voltage (Note 2) see Figure 2 (iF = 1.5 A) (iF = 3.0 A) IR Maximum Instantaneous Reverse Current (Note 2) see Figure 4 (VR = 40 V) (VR = 20 V) 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 Unit TJ = 25°C TJ = 125°C 0.46 0.54 0.39 0.54 TJ = 25°C TJ = 100°C 0.8 0.1 5.7 1.6 V mA 100 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) MBRAF1540T3G 10 TJ = 125°C 25°C 1.0 100°C -40°C 0.1 0.1 0.3 0.5 0.9 0.7 10 TJ = 125°C 1.0 100°C 25°C 0.1 0.3 0.1 0.5 0.9 0.7 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100E-3 10E-3 IR , MAXIMUM REVERSE CURRENT (AMPS) 100E-3 IR , REVERSE CURRENT (AMPS) 100 TJ = 125°C 1.0E-3 100°C 10E-3 TJ = 125°C 1.0E-3 100°C 100E-6 100E-6 10E-6 25°C 1.0E-6 10 20 40 30 10E-6 1.0E-6 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 1000 TJ = 25°C C, CAPACITANCE (pF) 0 25°C 100 10 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance http://onsemi.com 3 35 40 40 R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) MBRAF1540T3G 100 10 1 50% Duty Cycle 20% 10% 5% 2% 1% 0.1 0.01 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 6. Typical Transient Thermal Response, Junction−to−Ambient http://onsemi.com 4 100 1000 MBRAF1540T3G PACKAGE DIMENSIONS SMA−FL CASE 403AA ISSUE O E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. D DIM A b c D E E1 L TOP VIEW A c RECOMMENDED SOLDER FOOTPRINT* C SIDE VIEW SEATING PLANE 1.76 2X MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 5.56 b 1.30 2X L BOTTOM VIEW DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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