ONSEMI MBRAF1540T3G

MBRAF1540T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
•
•
•
•
•
•
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SCHOTTKY BARRIER
RECTIFIER
1.5 AMPERE
40 VOLTS
Low Profile Package for Space Constrained Applications
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
150°C Operating Junction Temperature
Guard−Ring for Stress Protection
These are Pb−Free and Halide−Free Devices
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
SMA−FL
CASE 403AA
STYLE 6
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
•
•
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
MARKING DIAGRAM
AYWW
RAEG
G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
40
V
Average Rectified Forward Current
(At Rated VR, TC = 100°C)
IO
1.5
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave,
100 kHz, TC = 130°C)
IFRM
3.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
40
A
Storage/Operating Case Temperature
Operating Junction Temperature
Voltage Rate of Change
(Rated VR, TJ = 25°C)
Tstg, TC
−55 to +150
°C
TJ
−55 to +150
°C
dv/dt
10,000
V/ms
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 0
1
RAE
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBRAF1540T3G
SMA−FL
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MBRAF1540/D
MBRAF1540T3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Lead (Note 1)
Thermal Resistance,
Junction−to−Ambient (Note 1)
Symbol
Value
RqJL
25
RqJA
90
Symbol
Value
Unit
°C/W
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
vF
Maximum Instantaneous Forward Voltage (Note 2)
see Figure 2
(iF = 1.5 A)
(iF = 3.0 A)
IR
Maximum Instantaneous Reverse Current (Note 2)
see Figure 4
(VR = 40 V)
(VR = 20 V)
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
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2
Unit
TJ = 25°C
TJ = 125°C
0.46
0.54
0.39
0.54
TJ = 25°C
TJ = 100°C
0.8
0.1
5.7
1.6
V
mA
100
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBRAF1540T3G
10
TJ = 125°C
25°C
1.0
100°C
-40°C
0.1
0.1
0.3
0.5
0.9
0.7
10
TJ = 125°C
1.0
100°C
25°C
0.1
0.3
0.1
0.5
0.9
0.7
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
100E-3
10E-3
IR , MAXIMUM REVERSE CURRENT (AMPS)
100E-3
IR , REVERSE CURRENT (AMPS)
100
TJ = 125°C
1.0E-3
100°C
10E-3
TJ = 125°C
1.0E-3
100°C
100E-6
100E-6
10E-6
25°C
1.0E-6
10
20
40
30
10E-6
1.0E-6
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
1000
TJ = 25°C
C, CAPACITANCE (pF)
0
25°C
100
10
0
5.0
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
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3
35
40
40
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
MBRAF1540T3G
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (S)
Figure 6. Typical Transient Thermal Response, Junction−to−Ambient
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4
100
1000
MBRAF1540T3G
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA
ISSUE O
E
E1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
D
DIM
A
b
c
D
E
E1
L
TOP VIEW
A
c
RECOMMENDED
SOLDER FOOTPRINT*
C
SIDE VIEW
SEATING
PLANE
1.76
2X
MILLIMETERS
MIN
MAX
0.90
1.10
1.25
1.65
0.15
0.30
2.40
2.80
4.80
5.40
4.00
4.60
0.70
1.10
5.56
b
1.30
2X
L
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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MBRAF1540/D