SANYO 2SK3738_12

2SK3738
Ordering number : EN7671A
SANYO Semiconductors
DATA SHEET
2SK3738
N-Channel Junction Silicon FET
Impedance Converter Applications
Applications
•
•
Impedance conversion
Infrared sensor
Features
•
•
•
Small IGSS
Small Ciss
Ultrasmall package permitting applied sets to be small and slim
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Drain Voltage
VDSS
VGDS
Gate Current
Drain Current
Conditions
Ratings
Unit
40
V
--40
V
IG
10
mA
ID
PD
1
mA
Allowable Power Dissipation
100
mW
Junction Temperature
Tj
Storage Temperature
Tstg
150
°C
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7027A-003
• Package
: SMCP
• JEITA, JEDEC
: SC-75, SOT-416
• Minimum Packing Quantity : 3,000 pcs./reel
0.1
0.4
2
0.6
KB
TL
0.2
0.5 0.5
0 to 0.1
Marking
LOT No.
1
0.75
Packing Type: TL
0.8
3
LOT No.
1.6
0.4
0.3
0.1 MIN
2SK3738-TL-E
1.6
Electrical Connection
1 : Source
2 : Drain
3 : Gate
3
SANYO : SMCP
1
2
http://www.sanyosemi.com/en/network/
91212 TKIM/42004GB TSIM TA-100829 No.7671-1/6
2SK3738
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IGSS
VGS(off)
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
IDSS
| yfs |
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Ratings
Conditions
min
IG=--10μA, VDS=0V
VGS=--20V, VDS=0V
typ
Unit
max
--40
V
--500
VDS=10V, ID=1μA
--1.5
VDS=10V, VGS=0V
50
VDS=10V, VGS=0V, f=1kHz
0.06
VDS=10V, VGS=0V, f=1MHz
pA
--2.3
V
130
μA
0.13
mS
1.7
pF
0.7
pF
Ordering Information
Device
2SK3738-TL-E
Package
Shipping
memo
SMCP
3,000pcs./reel
Pb Free
ID -- VDS
140
120
100
V GS=0V
80
--0.2V
60
--0.4V
Drain Current, ID -- μA
120
--0.6V
--0.8V
--1.0V
--1.2V
--1.4V
20
0
0
1
2
3
VGS=0V
100
--0.2V
80
--0.4V
60
--0.6V
40
--0.8V
--1.0V
20
--1.4V
--1.2V
0
4
Drain-to-Source Voltage, VDS -- V
5
0
ID -- VGS
4
8
16
20
ITR00838
ID -- VGS
80
VDS=10V
IDSS=50μA
12
Drain-to-Source Voltage, VDS -- V
ITR00837
VDS=10V
IDSS=100μA
70
20
--2
5°C
75
°C
30
100
80
25
°C
40
°C
75
Ta
=
--2
5
50
60
40
10
20
0
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
Gate-to-Source Voltage, VGS -- V
0
ITR00839
140
120
Drain Current, ID -- μA
°C
60
160
0
--2.4
--2.0
--1.6
--1.2
--0.8
--0.4
Gate-to-Source Voltage, VGS -- V
0
ITR00840
No.7671-2/6
Drain Current, ID -- μA
40
Ta
=2
5°
C
Drain Current, ID -- μA
ID -- VDS
140
2SK3738
VGS(off) -- IDSS
VDS=10V
ID=1μA
2
--1.0
7
3
5
7
100
2
Drain Current, IDSS -- μA
2
0.1
7
3
3
5
7
100
2
Drain Current, IDSS -- μA
IT06668
PD -- Ta
120
IT06669
Ciss -- VDS
10
VGS=0
f=1MHz
7
100
Input Capacitance, Ciss -- pF
Allowable Power Dissipation, PD -- mW
VDS=10V
VGS=0
f=1kHz
5
5
80
60
40
20
0
0
5
3
2
1.0
7
5
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT06670
3
1.0
2
3
5
7
10
2
3
Drain-to-Source Voltage, VDS -- V
5
7
IT06671
Crss -- VDS
5
Reverse Transfer Capacitance, Crss -- pF
⏐yfs⏐ -- IDSS
3
Forward Transfer Admittance, ⏐yfs⏐ -- mS
Cutoff Voltage, VGS(off) -- V
3
VGS=0
f=1MHz
3
2
1.0
7
5
3
2
0.1
1.0
2
3
5
7
10
2
3
Drain-to-Source Voltage, VDS -- V
5
7
IT06672
No.7671-3/6
2SK3738
Embossed Taping Specification
2SK3738-TL-E
No.7671-4/6
2SK3738
Outline Drawing
2SK3738-TL-E
Land Pattern Example
Mass (g) Unit
0.003 mm
* For reference
Unit: mm
0.7
1.3
0.7
0.7
0.6
0.5
0.5
No.7671-5/6
2SK3738
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This catalog provides information as of September, 2012. Specifications and information herein are subject
to change without notice.
PS No.7671-6/6