SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Power Management Switch High Speed Switching Applications Unit: mm • • Small Package Low on Resistance : Ron = 70 mΩ (max) (@VGS = −4 V) : Ron = 95 mΩ (max) (@VGS = −2.5 V) • Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS −12 V Gate-Source voltage VGSS ±8 V ID −3.0 DC Drain current Pulse Drain power dissipation IDP A −6.0 (Note 2) PD (Note 1) 1.25 W JEDEC ― ― Channel temperature Tch 150 °C JEITA Storage temperature range Tstg −55~150 °C TOSHIBA Note: 2-3S1A Weight: 10 mg (typ.) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm , t = 10 s) Note 2: The pulse width limited by max channel temperature. Marking Equivalent Circuit 3 3 KDH 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account 1 2007-11-01 SSM3J13T Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Test Condition Typ. Max Unit IGSS VGS = ±8 V, VDS = 0 ⎯ ⎯ ±1 μA V (BR) DSS ID = −1 mA, VGS = 0 −12 ⎯ ⎯ V V (BR) DSX ID = −1 mA, VGS = 8 V −4 ⎯ ⎯ V IDSS VDS = −12 V, VGS = 0 ⎯ ⎯ −1 μA −0.45 ⎯ −1.1 V (Note 3) 3.8 ⎯ ⎯ S ID = −1.5 A, VGS = −4 V (Note 3) ⎯ 50 70 ID = −1.5 A, VGS = −2.5 V (Note 3) ⎯ 70 95 ID = −1.5 A, VGS = −2.0 V (Note 3) ⎯ 90 180 Gate threshold voltage Vth VDS = −3 V, ID = −0.1 mA Forward transfer admittance |Yfs| VDS = −3 V, ID = −1.5 A Drain-Source ON resistance Min RDS (ON) mΩ Input capacitance Ciss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 890 ⎯ pF Reverse transfer capacitance Crss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 203 ⎯ pF Output capacitance Coss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 288 ⎯ pF Switching time Turn-on time ton VDD = −10 V, ID = −1 A ⎯ 48 ⎯ Turn-off time toff VGS = 0~−2.5 V, RG = 4.7 Ω ⎯ 120 ⎯ ns Note 3: Pulse test Switching Time Test Circuit (a) Test circuit 0 OUT 10 μs RG IN −2.5 V (b) VIN VDD = −10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns COMMON SOURCE Ta = 25°C VDD 0V 10% 90% −2.5 V VDS (ON) 90% (c) VOUT 10% VDD tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. 2 2007-11-01 SSM3J13T ID – VDS −4 ID – VGS −10000 −4 V −1000 (mA) −1.6 V −1.5 V Drain current ID (A) Drain current ID Ta = 25°C −2.0 V −1.8 V −3 Common Source Common Source −2.5 V −2 −1.4 V −1 −0.5 −1 −1.5 Drain-Source voltage 75°C Ta = 25°C −100 −25°C −10 −1 −0.1 VGS = −1.2 V 0 0 VDS = −3 V −0.01 0 −2 VDS (V) −0.5 −1 Gate-Source voltage RDS (ON) –ID VGS (V) 500 Common Source Common Source Ta = 25°C ID = −1.5 A Drain-Source on resistance RDS (ON) (mΩ) 200 150 VGS = −2 V 100 −2.5 V −4 V 50 0 0 −2 −4 300 200 100 0 0 −6 Ta = 25°C 400 Drain current ID (A) −2 −4 Gate-Source voltage −6 VGS (V) 100 Common Common Source VDS = −3 V 140 Source ID = −1.5 A Forward transfer admittance |Yfs| (S) Drain-Source on resistance RDS (ON) (mΩ) −8 |Yfs| – ID RDS (ON) – Ta 160 120 −2 RDS (ON) – VGS 250 Drain-Source on resistance RDS (ON) (mΩ) −1.5 VGS = −2 V 100 −2.5 V 80 −4 V 60 40 Ta = 25°C 10 1 20 0 −25 0 25 50 75 100 125 0.1 −0.01 150 Ambient temperature Ta (°C) −0.1 −1 −10 Drain current ID (A) 3 2007-11-01 SSM3J13T Vth – Ta C – VDS −1 1400 Common Source VGS = 0 f = 1 MHz Ta = 25°C VDS = −3 V 1200 ID = −0.1 mA (pF) −0.8 −0.6 Capacitance C Gate threshold voltage Vth (V) Common Source −0.4 1000 Ciss 800 600 400 Coss −0.2 200 0 −25 0 25 50 75 100 125 Crss 0 0 150 4 2 Ambient temperature Ta (°C) 6 Drain-Source voltage t – ID 12 10 VDS 14 (V) IDR – VDS −3 1000 Common Source 300 Drain reverse current IDR (A) Common Source VDD = −10 V VGS = 0∼ −2.5 V Ta = 25°C RG = 4.7 Ω 500 Switching time t (ns) 8 toff 100 tf 50 30 ton VGS = 0 Ta = 25°C −2 D G S −1 tr 10 −0.01 −0.1 −1 0 0 −10 Drain current ID (A) 0.4 Drain-Source voltage 0.8 VDS 1.2 (V) PD – Ta Drain power dissipation PD (W) 1.5 1.25 Mounted on FR4 board t = 10 s (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) 1 0.75 DC 0.5 0.25 0 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 4 2007-11-01 SSM3J13T Safe operating area −10 ID max (pulsed) 10 ms* 10 s* −1 DC operation −0.1 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) *: Single nonrepetitive Pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.01 −0.1 VDSS max −1 −10 Drain-Source voltage −100 VDS (V) rth – tw 1000 Single pulse Transient thermal impedance rth (°C /W) Drain current ID (A) ID max (continuous) 100 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) 10 1 0.1 0.0001 0.001 0.01 0.1 1 Pulse width 5 10 100 1000 tw (s) 2007-11-01 SSM3J13T RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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