< Dual-In-Line Package Intelligent Power Module > PS22A79 TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FEATURES AND RATINGS ● 3 phase DC/AC inverter ● 1200V / 50A ● Built-in LPT-CSTBT (6th generation IGBT) ● Insulated transfer molding package ● N-side IGBT open emitter APPLICATION ● AC 400V class motor control INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS ● For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection ● For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC) ● Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply) ● Temperature output : Outputting LVIC temperature by analog signal ● Input interface : 5V line, Schmitt trigger receiver circuit (High Active) ● UL Recognized : UL1557 File E80276 INTERNAL CIRCUIT VUFB VUFS P HVIC1 IGBT1 VP1 U Di1 Ho U VVFB VVFS HVIC2 IGBT2 VP1 VP Di2 Ho V VWFB VWFS HVIC3 VP1 WP IGBT3 Di3 Ho W VPC LVIC IGBT4 Di4 UOUT NU VN1 IGBT5 Di5 VOUT NV UN VN WN IGBT6 Di6 WOUT NW Fo VOT VNC CFO CIN Vsc Publication Date : February 2012 1 < Dual-In-Line Package Intelligent Power Module > PS22A79 TRANSFER MOLDING TYPE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCC VCC(surge) VCES ±IC ±ICP PC Tj Parameter Supply voltage Supply voltage (surge) Collector-emitter voltage Each IGBT collector current Each IGBT collector current (peak) Collector dissipation Junction temperature Condition Applied between P-NU,NV,NW Applied between P-NU,NV,NW TC= 25°C TC= 25°C, up to 1ms TC= 25°C, per 1 chip Ratings 900 1000 1200 50 100 129.9 -20~+150 Unit V V V A A W °C Ratings 20 20 -0.5~VD+0.5 -0.5~VD+0.5 1 -0.5~VD+0.5 Unit V V V V mA V Ratings Unit 800 V -20~+100 -40~+125 °C °C 2500 Vrms CONTROL (PROTECTION) PART Symbol VD VDB VIN VFO IFO VSC Parameter Control supply voltage Control supply voltage Input voltage Fault output supply voltage Fault output current Current sensing input voltage Condition Applied between VP1-VPC, VN1-VNC Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS Applied between UP, VP, WP-VPC, UN, VN, WN-VNC Applied between FO-VNC Sink current at FO terminal Applied between CIN-VNC TOTAL SYSTEM Symbol TC Tstg Parameter Self protection supply voltage limit (Short circuit protection capability) Module case operation temperature Storage temperature Viso Isolation voltage VCC(PROT) Condition VD = 13.5~16.5V, Inverter Part Tj = 125°C, non-repetitive, up to 2μs (Note 1) 60Hz, Sinusoidal, AC 1min, between connected all pins and heat sink plate Note 1: Tc measurement point is described in Fig.1. Fig. 1: TC MEASUREMENT POINT Measurement point for Tc THERMAL RESISTANCE Symbol Rth(j-c)Q Rth(j-c)F Parameter Junction to case thermal resistance (Note 2) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min. - Limits Typ. - Max. 0.77 1.25 Unit K/W K/W Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.2K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•k). Publication Date : February 2012 2 < Dual-In-Line Package Intelligent Power Module > PS22A79 TRANSFER MOLDING TYPE INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton tC(on) toff tC(off) trr ICES Parameter Condition Collector-emitter saturation voltage VD=VDB = 15V, VIN= 5V, IC= 50A FWDi forward voltage VIN= 0V, -IC= 50A Switching times VCC= 600V, VD= VDB= 15V IC= 50A, Tj= 125°C, VIN= 0↔5V Inductive Load (upper-lower arm) Collector-emitter cut-off current VCE=VCES Tj= 25°C Tj= 125°C Tj= 25°C Tj= 125°C Min. 0.70 - Limits Typ. 1.90 2.10 2.50 1.50 0.50 2.50 0.40 0.50 - Max. 2.60 2.80 3.20 2.40 0.80 3.70 0.80 1 10 Min. - Limits Typ. - Max. 5.60 5.60 1.10 1.10 85 - - Unit V V μs μs μs μs μs mA CONTROL (PROTECTION) PART Symbol Parameter ID Circuit current ISC Short circuit trip level UVDBt P-side Control supply under-voltage protection(UV) N-side Control supply under-voltage protection(UV) UVDt UVDr VD=15V, VIN=0V VD=15V, VIN=5V VD=VDB=15V, VIN=0V Each part of VUFB-VUFS, VVFB-VVFS, VWFB-VWFS VD=VDB=15V, VIN=5V -20°C≤Tj≤125°C, Rs=34Ω (±1%), Not connecting outer shunt resistors to NU,NV,NW terminals Trip level Tj ≤125°C Reset level Total of VP1-VPC, VN1-VNC IDB UVDBr Condition VFOH VFOL tFO IIN Vth(on) Vth(off) Fault output pulse width Input current ON threshold voltage OFF threshold voltage VOT Temperature output Fault output voltage Tj ≤125°C (Note 3) Unit mA A 10.0 - 12.0 V 10.5 - 12.5 V Trip level 10.3 - 12.5 V Reset level 10.8 - 13.0 V 4.9 1.6 0.70 0.8 2.4 1.00 - 0.95 1.50 3.5 - V V ms mA 2.26 2.38 2.51 V VSC = 0V, FO terminal pulled up to 5V by 10kΩ VSC = 1V, IFO = 1mA CFO=22nF VIN = 5V (Note 4) Applied between UP, VP, WP, UN, VN, WN-VNC LVIC temperature = 75°C with 5kΩ pull down resistor (Note 5) V Note 3: Short circuit protection detects sense current divided from main current at N-side IGBT and works for N-side IGBT only. In the case that outer shunt resistor is inserted into main current path, protection current level ISC changes. For details, please refer the application note for this DIPIPM. Note 4: Fault signal is output when short circuit or N-side control supply under-voltage protection works. The fault output pulse-width tFO depends on the capacitance of CFO. (CFO (typ.) = tFO x (9.1 x 10-6) [F]) Note 5: DIPIPM doesn't shutdown IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level that user defined, controller (MCU) should stop the DIPIPM immediately. This output might reach 5V when temperature rises excessively, so in the case of using low voltage controller like 3.3V MCU, it is recommended to insert a clamp Di between controller supply (e.g. 3.3V) and VOT output for overvoltage protection. Temperature of LVIC vs. VOT output characteristics and VOT output circuit are described in Fig.2 and Fig.3. Publication Date : February 2012 3 < Dual-In-Line Package Intelligent Power Module > PS22A79 TRANSFER MOLDING TYPE INSULATED TYPE Fig. 2 Temperature of LVIC vs. VOT Output Characteristics 4.0 3.5 Max. Typ. 3.0 VOT output (V)_ Min. 2.5 2.51 2.38 2.26 2.0 1.5 1.0 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 LVIC temperature (°C) Fig.3 VOT Output Circuit Inside LVIC of DIPIPM Temperature signal VOT Ref VNC MCU 5kΩ (1) It is recommended to insert 5kΩ or more (5.1kΩ is recommended.) pull down resistor for getting linear output characteristics at lower temperature than room temperature. When the pull down resistor is inserted between VOT and VNC(control GND), the extra current calculated by VOT output voltage / pull down resistance flows as LVIC circuit current continuously. In the case of only using VOT for detecting higher temperature than room temperature, it isn't necessary to insert the pull down resistor. (2) This output might reach 5V when temperature rises excessively, so in the case of using low voltage controller like 3.3V MCU, it is recommended to insert a clamp Di between controller supply (e.g. 3.3V) and VOT output for overvoltage protection. (3) If VOT output function is unnecessary, leave this output terminal open (no connection). Please refer the application note about the usage of VOT too. Publication Date : February 2012 4 < Dual-In-Line Package Intelligent Power Module > PS22A79 TRANSFER MOLDING TYPE INSULATED TYPE MECHANICAL CHARACTERISTICS AND RATINGS Parameter Condition Mounting torque Terminal pulling strength Terminal bending strength Mounting screw : M4 Load 19.6N Load 9.8N, 90deg. bend Recommended 1.18N·m EIAJ-ED-4701 EIAJ-ED-4701 Min. 0.98 10 2 Limits Typ. 1.18 - - 46 - g -50 - 100 μm Weight Heat-sink flatness (Note 6) Unit Max. 1.47 - N·m s times Note 6: Measurement point of heat-sink flatness RECOMMENDED OPERATION CONDITIONS Symbol Parameter VCC VD VDB ΔVD, ΔVDB tdead fPWM Supply voltage Control supply voltage Control supply voltage Control supply variation Arm shoot-through blocking time PWM input frequency IO Allowable r.m.s. current Min. 350 13.5 13.0 -1 3.3 - Limits Typ. 600 15.0 15.0 - Max. 800 16.5 18.5 +1 20 fPWM= 5kHz - - 25 fPWM= 15kHz - - 13 1.5 - - IC≤50A 3.0 - - 50A<IC≤85A 3.5 - - -5.0 -20 - +5.0 +125 Condition Applied between P-NU, NV, NW Applied between VP1-VPC, VN1-VNC Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS For each input signal TC ≤ 100°C, Tj ≤ 125°C VCC = 600V, VD = 15V, P.F = 0.8, Sinusoidal PWM TC ≤ 100°C, Tj ≤ 125°C (Note 7) PWIN(on) PWIN(off) (Note 8) Minimum input pulse width 350≤ VCC ≤ 800V, 13.5≤ VD ≤ 16.5V, 13.0≤ VDB ≤ 18.5V, -20°C ≤ TC ≤ 100°C, N line wiring inductance less than 10nH (Note 9) VNC Tj VNC variation Junction temperature Between VNC-NU, NV, NW (including surge) Unit V V V V/μs μs kHz Arms μs V °C Note 7: The allowable r.m.s. current value depends on the actual application conditions. 8: DIPIPM might not make response to the input on signal with pulse width less than PWIN (on). 9: IPM might make no response or delayed response (P-side IGBT only) for the input signal with off pulse width less than PWIN(off). Please refer Fig. 4 about delayed response. Fig. 4 About Delayed Response Against Shorter Input Off Signal Than PWIN(off) (P-side only) P-side Control Input Solid line Internal IGBT Gate Output Current Ic Broken line t2 t1 Publication Date : February 2012 5 …Off pulse width ≥ PWIN(off); Turn on time t1 (Normal delay) …Off pulse width < PWIN(off); Turn on time t2 (Longer delay in some cases) < Dual-In-Line Package Intelligent Power Module > PS22A79 TRANSFER MOLDING TYPE INSULATED TYPE Fig. 5 Timing Charts of DIPIPM Protective Functions [A] Short-Circuit Protection (N-side only with the external sense resistor and RC filter) a1. Normal operation: IGBT ON and outputs current. a2. Short circuit current detection (SC trigger) (It is recommended to set RC time constant 1.5~2.0μs so that IGBT shut down within 2.0μs when SC occurs.) a3. All N-side IGBT's gates are hard interrupted. a4. All N-side IGBTs turn OFF. a5. FO outputs with a fixed pulse width determined by the external capacitor CFO. a6. Input = “L”: IGBT OFF a7. Fo finishes output, but IGBTs don't turn on until inputting next ON signal (LH). (IGBT of each phase can return to normal state by inputting ON signal to each phase.) a8. Normal operation: IGBT ON and outputs current. Lower-side control input a6 SET RESET Protection circuit state a3 Internal IGBT gate a4 SC trip current level Output current Ic a8 a1 a7 a2 Sense voltage of the sense resistor SC reference voltage Delay by RC filtering Error output Fo a5 [B] Under-Voltage Protection (N-side, UVD) b1. Control supply voltage VD exceeds under voltage reset level (UVDr), but IGBT turns ON by next ON signal (LH). (IGBT of each phase can return to normal state by inputting ON signal to each phase.) b2. Normal operation: IGBT ON and outputs current. b3. VD level drops to under voltage trip level. (UVDt). b4. All N-side IGBTs turn OFF in spite of control input condition. b5. Fo outputs for the period determined by the capacitance CFO, but output is extended during VD keeps below UVDr. b6. VD level reaches UVDr. b7. Normal operation: IGBT ON and outputs current by next ON signal (LH). Control input RESET Protection circuit state Control supply voltage VD UVDr SET b1 UVDt b2 b3 b4 Output current Ic Error output Fo b5 Publication Date : February 2012 6 RESET b6 b7 < Dual-In-Line Package Intelligent Power Module > PS22A79 TRANSFER MOLDING TYPE INSULATED TYPE [C] Under-Voltage Protection (P-side, UVDB) c1. Control supply voltage VDB rises. After the voltage reaches under voltage reset level UVDBr, IGBT turns on by next ON signal (LH). c2. Normal operation: IGBT ON and outputs current. c3. VDB level drops to under voltage trip level (UVDBt). c4. IGBT of corresponding phase only turns OFF in spite of control input signal level, but there is no FO signal output. c5. VDB level reaches UVDBr. c6. Normal operation: IGBT ON and outputs current by next ON signal (LH). Control input RESET SET RESET Protection circuit state UVDBr c1 Control supply voltage VDB UVDBt c5 c3 c2 c6 c4 Output current Ic Error output Fo Keep High-level (no fault output) Fig. 6 MCU I/O Interface Circuit 5V line 10kΩ DIPIPM UP,VP,WP,UN,VN,WN MCU 3.3kΩ(min) Fo VNC(Logic) Note) Design for input RC filter depends on the PWM control scheme used in the application and the wiring impedance of the printed circuit board. But because noisier in the application for 1200V, it is strongly recommended to insert RC filter. (Time constant: over 100ns. e.g. 100Ω, 1000pF) The DIPIPM input signal interface integrates a min. 3.3kΩ pull-down resistor. Therefore, when using RC filter, be careful to satisfy turn-on threshold voltage requirement. Fo output is open drain type. It should be pulled up to the positive side of 5V or 15V power supply with the resistor that limits Fo sink current IFo under 1mA. In the case of pulling up to 5V supply, over 5.1kΩ is needed. (10kΩ is recommended.) Fig. 7 Wiring Pattern around the Shunt Resistor in the Case of Inserting into Main Current Path DIPIPM Each wiring Inductance should be less than 10nH. Inductance of a copper pattern with length=17mm, width=3mm is about 10nH. VNC NU NV NW N1 Shunt resistors GND wiring from VNC should be connected close to the terminal of shunt resistor. Low inductance shunt resistor like surface mounted (SMD) type is recommended. Protection current level ISC changes by inserting shunt resistor. Publication Date : February 2012 7 < Dual-In-Line Package Intelligent Power Module > PS22A79 TRANSFER MOLDING TYPE INSULATED TYPE Fig. 8 Example of Application Circuit UP(1) R3 C5 IGBT1 VP1(3) C2 P(40) Di1 HVIC VUFB(4) D2 + U(39) VUFS(6) C1 D1 C2 R3 C5 VP(7) IGBT2 VP1(9) C2 Di2 HVIC VVFB(10) D2 + V(38) VVFS(12) C1 D1 C2 R3 C5 C2 WP(13) VP1(14) VPC(15) IGBT3 Di3 HVIC VWFB(16) MCU D2 + M W(37) + VWFS(18) IGBT4 C1 D1 C2 Di4 C3 UN(27) R3 C5 NU(36) VN(28) R3 C5 WN(29) R3 IGBT5 Di5 C5 5V CFO(25) NV(35) R2 Fo(26) LVIC IGBT6 Di6 VOT(23) NW(34) 15V VD C1 VN1(21) + D1 C2 VNC(22) C VSC(19) CIN(24) B C4 D R1 Rs Sense resistor A Control GND wiring Note N1 Power GND wiring 1 :If control GND and power GND are patterned by common wiring, it may cause malfunction by fluctuation of power GND level. It is recommended to connect control GND and power GND at only a N1 point at which NU, NV, NW are connected to power GND line. 2 :It is recommended to insert a Zener diode D1 (24V/1W) between each pair of control supply terminals to prevent surge destruction. 3 :To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible. Generally inserting a 0.1μ~0.22μF snubber capacitor C3 between the P-N1 terminals is recommended. 4 :R1, C4 of RC filter for preventing protection circuit malfunction is recommended to select tight tolerance, temp-compensated type. The time constant R1C4 should be set so that SC current is shut down within 2μs. (1.5μs~2μs is general value.) SC interrupting time might vary with the wiring pattern, so the enough evaluation on the real system is recommended. If R1 is too small, it may leads to delay of protection. So R1 should be min. 10 times larger resistance than Rs. (100 times is recommended.) 5 :To prevent erroneous operation, the wiring of A, B, C should be as short as possible. 6 :For sense resistor, the variation within 1%(including temperature characteristics), low inductance type is recommended. And the over 1/8W is recommended, but it is necessary to evaluate in your real system finally. 7 :To prevent erroneous SC protection, the wiring from VSC terminal to CIN filter should be divided at the point D that is close to the terminal of sense resistor. And the wiring should be patterned as short as possible. 8 :All capacitors should be mounted as close to the terminals of the DIPIPM as possible. (C1: good temperature, frequency characteristic electrolytic type, and C2: 0.22μ~2.0μF, good temperature, frequency and DC bias characteristic ceramic type are recommended.) 9 :Input drive is High-active type. There is a min. 3.3kΩ pull-down resistor in the input circuit of IC. To prevent malfunction, the wiring of each input should be as short as possible. And it is strongly recommended to insert RC filter (e.g. R3=100Ω and C5=1000pF) and confirm the input signal level to meet the turn-on and turn-off threshold voltage. Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible. 10 :Fo output is open drain type. It should be pulled up to MCU or control power supply (e.g. 5V,15V) by a resistor that makes IFo up to 1mA. (IFO is estimated roughly by the formula of control power supply voltage divided by pull-up resistance. In the case of pulled up to 5V, 10kΩ (5kΩ or more) is recommended.) 11 :Error signal output width (tFo) can be set by the capacitor connected to CFO terminal. CFO(typ.) = tFo x (9.1 x 10-6) (F) 12 :High voltage (VRRM =1200V or more) and fast recovery diode (trr=less than 100ns or less) should be used for D2 in the bootstrap circuit. 13 :If high frequency noise superimposed to the control supply line, IC malfunction might happen and cause erroneous operation. To avoid such problem, voltage ripple of control supply line should meet dV/dt ≤+/-1V/μs, Vripple≤2Vp-p. 14 :For DIPIPM, it isn't recommended to drive same load by parallel connection with other phase IGBT or other DIPIPM. Publication Date : February 2012 8 < Dual-In-Line Package Intelligent Power Module > PS22A79 TRANSFER MOLDING TYPE INSULATED TYPE Fig. 9 Package Outlines Dimensions in mm Publication Date : February 2012 9 < Dual-In-Line Package Intelligent Power Module > PS22A79 TRANSFER MOLDING TYPE INSULATED TYPE Revision Record Rev. Date Page 1 2/1/2012 - Revised contents New Publication Date : February 2012 10 < Dual-In-Line Package Intelligent Power Module > PS22A79 TRANSFER MOLDING TYPE INSULATED TYPE Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2012 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. DIPIPM and CSTBT are registered trademarks of MITSUBISHI ELETRIC CORPORATION. Publication Date : February 2012 11