MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21963-T/-AT/-CT/-TW TRANSFER-MOLD TYPE INSULATED TYPE PS21963-T INTEGRATED POWER FUNCTIONS 600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS • • • • • For upper-leg IGBTS : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection. For lower-leg IGBTS : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC), Over temperature protection (OT). Fault signaling : Corresponding to an SC fault (Lower-leg IGBT), a UV fault (Lower-side supply) or an OT fault (LVIC temperature). Input interface : 3V, 5V line (High Active). UL Approved : Yellow Card No. E80276 APPLICATION AC100V~200V three-phase inverter drive for small power motor control. Fig. 1 PACKAGE OUTLINES (PS21963-T) Dimensions in mm 0.28 1.778 ±0.2 B A 38 ±0.5 20×1.778(=35.56) 35 ±0.3 TERMINAL CODE 3.5 16-0.5 29.2 ±0.5 24 ±0.5 Type name Lot No. 14.4 ±0.5 12 QR Code .6 R1 2- 3 MIN 18 (3.3) (3.5) 1 14.4 ±0.5 17 (1) 0.4 1.5 ±0.05 0.8 HEAT SINK SIDE 25 4-C1.2 0.4 8-0.6 0.28 14×2.54 (=35.56) 2.5 MIN 1.5 M 0.5 HEAT SINK SIDE 9.5±0.5 (2.656) 5.5±0.5 0.5 0.5 (1.2) IN (1.2) 0.5 NC VUFB VVFB VWFB UP VP WP VP1 VNC * UN VN WN VN1 FO CIN VNC * NC NC NC N W V U P NC (0~5°) 2.54 ±0.2 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. (2.756) DETAIL A DETAIL B *) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and leave another one open. Aug. 2007 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21963-T/-AT/-CT/-TW TRANSFER-MOLD TYPE INSULATED TYPE Fig. 2 LONG TERMINAL TYPE PACKAGE OUTLINES (PS21963-AT) 38 20×1.778(=35.56) 35 ±0.3 0.28 1.778 ±0.2 Dimensions in mm B A ±0.5 TERMINAL CODE 3.5 16-0.5 (3.5) 29.4 ±0.5 24 ±0.5 Type name Lot No. 0.8 14.4 ±0.5 12 QR Code .6 R1 2- (3.3) 1 14.4 ±0.5 17 (1) 0.4 1.5 ±0.05 3 MIN HEAT SINK SIDE 25 8-0.6 4-C1.2 0.4 18 0.28 2.54 ±0.2 0.5 2.5 MIN 0.5 NC VUFB VVFB VWFB UP VP WP VP1 VNC * UN VN WN VN1 FO CIN VNC * NC NC NC N W V U P NC (0~5°) 14×2.54 (=35.56) 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 0.5 0.5 1.5 M IN (1.2) (1.2) 5.5±0.5 14±0.5 (2.656) (2.756) HEAT SINK SIDE DETAIL A DETAIL B *) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and leave another one open. Dimensions in mm Fig. 3 ZIGZAG TERMINAL TYPE PACKAGE OUTLINES (PS21963-CT) 38 ±0.5 20×1.778(=35.56) 35 ±0.3 0.28 1.778 ±0.2 B A TERMINAL CODE 3.5 1.5 ±0.05 0.4 Type name Lot No. 3 MIN 18 0.8 HEAT SINK SIDE 0.4 25 8-0.6 0.28 (3.5) 14.4 ±0.5 29.2 ±0.5 33.7±0.5 24 ±0.5 QR Code .6 (0~5°) R1 2- 14.4 ±0.5 12 18.9 ±0.5 1 (1) 17 0.4 16-0.5 4-C1.2 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. NC VUFB VVFB VWFB UP VP WP VP1 VNC * UN VN WN VN1 FO CIN VNC * NC NC NC N W V U P NC 2.54 ±0.2 (0~5°) 14×2.54 (=35.56) 0.5 0.5 1.5 M IN 9.5 5.5±0.5 (1.2) (1.2) (2.656) ±0.5 0.5 (2.756) HEAT SINK SIDE DETAIL A DETAIL B *) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and leave another one open. Aug. 2007 2 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21963-T/-AT/-CT/-TW TRANSFER-MOLD TYPE INSULATED TYPE Fig. 4 BOTH SIDES ZIGZAG TERMINAL TYPE PACKAGE OUTLINES (PS21963-TW) 38 20×1.778(=35.56) 35 ±0.3 0.28 1.778 ±0.25 Dimensions in mm B A ±0.5 3.5 TERMINAL CODE 1.5 ±0.05 (1) 1 (3.5) 29.2 ±0.5 Type name Lot No. 0.8 17.4 ±0.5 14.4 ±0.5 12 24 ±0.5 QR Code .6 R1 2- 35.2 ±0.6 17.4 ±0.5 14.4 ±0.5 0.4 17 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 0.4 16-0.5 3 MIN HEAT SINK SIDE (0~5°) 25 4-C1.2 0.4 7-0.6 14×2.54 (=35.56) (0~5°) (1.8) 0.4 18 0.28 2.54 ±0.25 2.5 MIN 0.5 1.5 M 0.5 0.5 NC VUFB VVFB VWFB UP VP WP VP1 VNC * UN VN WN VN1 FO CIN VNC * NC NC NC N W V U P NC IN (1.2) (1.2) 5.5±0.5 11±0.5 (2.656) (2.756) HEAT SINK SIDE DETAIL A DETAIL B *) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and leave another one open. Fig. 5 INTERNAL FUNCTIONS BLOCK DIAGRAM (TYPICAL APPLICATION EXAMPLE) Input signal conditioning Level shifter Level shifter Level shifter Drive circuit Drive circuit CBW+ Input signal conditioning CBW– CBV+ Input signal conditioning CBV– CBU+ CBU– High-side input (PWM) (3V, 5V line)(Note 1, 2) C1 : Electrolytic type with good temperature and frequency characteristics (Note : The capacitance value depends on the PWM control scheme used in the applied system). C2 : 0.22~2µF R-category ceramic capacitor for noise filtering. C2 C1 (Note 6) (Note 5) Protection circuit (UV) Inrush current limiter circuit Drive circuit P H-side IGBTS DIP-IPM AC line input U V W (Note 4) M (Note 7) Z C N1 AC line output N L-side IGBTS VNC CIN Z : ZNR (Surge absorber) C : AC filter (Ceramic capacitor 2.2~6.5nF) (Note : Additionally, an appropriate line-to line surge absorber circuit may become necessary depending on the application environment). Drive circuit Input signal conditioning Fo logic Protection Control supply circuit Under-Voltage protection Low-side input (PWM) FO (3V, 5V line)(Note 1, 2) Fault output (5V line) (Note 3) Note1: 2: 3: 4: 5: 6: 7: (Note 6) VNC (15V line) VD Input logic is high-active. There is a 3.3kΩ (min) pull-down resistor built-in each input circuit. When using an external CR filter, please make it satisfy the input threshold voltage. By virtue of integrating an application specific type HVIC inside the module, direct coupling to MCU terminals without any opto-coupler or transformer isolation is possible. (see also Fig. 11) This output is open drain type. The signal line should be pulled up to the positive side of the 5V power supply with approximately 10kΩ resistor. (see also Fig. 11) The wiring between the power DC link capacitor and the P, N1 terminals should be as short as possible to protect the DIP-IPM against catastrophic high surge voltages. For extra precaution, a small film type snubber capacitor (0.1~0.22µF, high voltage type) is recommended to be mounted close to these P & N1 DC power input pins. High voltage (600V or more) and fast recovery type (less than 100ns) diodes should be used in the bootstrap circuit. It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction. Bootstrap negative electrodes should be connected to U, V, W terminals directly and separated from the main output wires. Aug. 2007 3 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21963-T/-AT/-CT/-TW TRANSFER-MOLD TYPE INSULATED TYPE Fig. 6 EXTERNAL PART OF THE DIP-IPM PROTECTION CIRCUIT DIP-IPM Short Circuit Protective Function (SC) : SC protection is achieved by sensing the L-side DC-Bus current (through the external shunt resistor) after allowing a suitable filtering time (defined by the RC circuit). When the sensed shunt voltage exceeds the SC trip-level, all the L-side IGBTs are turned OFF and a fault signal (Fo) is output. Since the SC fault may be repetitive, it is recommended to stop the system when the Fo signal is received and check the fault. Drive circuit P IC (A) H-side IGBTS SC Protection Trip Level U V W L-side IGBTS External protection circuit N1 Shunt Resistor A N (Note 1) VNC C R Drive circuit CIN B C Collector current waveform Protection circuit 0 (Note 2) Note1: In the recommended external protection circuit, please select the RC time constant in the range 1.5~2.0µs. 2: To prevent erroneous protection operation, the wiring of A, B, C should be as short as possible. 2 tw (µs) MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCC VCC(surge) VCES ±IC ±ICP PC Tj Parameter Supply voltage Supply voltage (surge) Collector-emitter voltage Each IGBT collector current Each IGBT collector current (peak) Collector dissipation Junction temperature Condition Applied between P-N Ratings Applied between P-N TC = 25°C TC = 25°C, less than 1ms TC = 25°C, per 1 chip (Note 1) 450 500 600 10 20 27.0 –20~+125 Unit V V V A A W °C Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@ TC ≤ 100°C). However, to ensure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) ≤ 125°C (@ TC ≤ 100°C). CONTROL (PROTECTION) PART Symbol VD VDB Parameter Control supply voltage Control supply voltage VIN Input voltage VFO IFO VSC Fault output supply voltage Fault output current Current sensing input voltage Condition Applied between VP1-VNC, VN1-VNC Applied between VUFB-U, VVFB-V, VWFB-W Applied between UP, VP, WP, UN, VN, WN-VNC Applied between FO-VNC Sink current at FO terminal Applied between CIN-VNC Ratings 20 20 Unit V V –0.5~VD+0.5 V –0.5~VD+0.5 1 –0.5~VD+0.5 V mA V Aug. 2007 4 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21963-T/-AT/-CT/-TW TRANSFER-MOLD TYPE INSULATED TYPE TOTAL SYSTEM Symbol Condition VD = 13.5~16.5V, Inverter part Tj = 125°C, non-repetitive, less than 2µs (Note 2) Parameter VCC(PROT) Self protection supply voltage limit (short circuit protection capability) Module case operation temperature TC Tstg Storage temperature Viso 60Hz, Sinusoidal, 1 minute, Between pins and heat-sink plate Isolation voltage Ratings Unit 400 V –20~+100 –40~+125 °C °C 1500 Vrms Note 2: TC measurement point Control terminals 11.6mm DIP-IPM 3mm IGBT chip position TC point FWD chip position Heat sink side Power terminals THERMAL RESISTANCE Symbol Rth(j-c)Q Rth(j-c)F Condition Parameter Junction to case thermal resistance (Note 3) Inverter IGBT part (per 1/6 module) Inverter FWD part (per 1/6 module) Min. — Limits Typ. — Max. 3.7 °C/W — — 4.5 °C/W Unit Note 3 : Grease with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of DIP-IPM and heat-sink. The contacting thermal resistance between DIP-IPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3°C/W when the grease thickness is 20µm and the thermal conductivity is 1.0W/m·k. ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Condition Parameter Collector-emitter saturation voltage FWD forward voltage Switching times IC = 10A, Tj = 25°C VD = VDB = 15V VIN = 5V IC = 10A, Tj = 125°C Tj = 25°C, –IC = 10A, VIN = 0V VCC = 300V, VD = VDB = 15V IC = 10A, Tj = 125°C, VIN = 0 ↔ 5V Inductive load (upper-lower arm) Collector-emitter cut-off current Tj = 25°C VCE = VCES Tj = 125°C Min. — — — 0.60 — — — — — — Limits Typ. 1.70 1.80 1.70 1.10 0.30 0.40 1.50 0.50 — — Max. 2.20 2.30 2.20 1.70 — 0.60 2.10 0.80 1 10 Unit V V µs µs µs µs µs mA Aug. 2007 5 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21963-T/-AT/-CT/-TW TRANSFER-MOLD TYPE INSULATED TYPE CONTROL (PROTECTION) PART Symbol ID VFOH VFOL VSC(ref) IIN OTt OTrh UVDBt UVDBr UVDt UVDr tFO Vth(on) Vth(off) Vth(hys) Parameter Condition VD = VDB = 15V VIN = 5V VD = VDB = 15V VIN = 0V Total of VP1-VNC, VN1-VNC VUFB-U, VVFB-V, VWFB-W Total of VP1-VNC, VN1-VNC VUFB-U, VVFB-V, VWFB-W VSC = 0V, FO terminal pull-up to 5V by 10kΩ VSC = 1V, IFO = 1mA Tj = 25°C, VD = 15V (Note 4) VIN = 5V Trip level VD = 15V, At temperature of LVIC Trip/reset hysteresis Trip level Reset level Tj ≤ 125°C Trip level Reset level (Note 6) Circuit current Fault output voltage Short circuit trip level Input current Over temperature protection (Note 5) Control supply under-voltage protection Fault output pulse width ON threshold voltage OFF threshold voltage ON/OFF threshold hysteresis voltage Applied between UP, VP, WP, UN, VN, WN-VNC Min. — — — — 4.9 — 0.43 0.70 100 — 10.0 10.5 10.3 10.8 20 — 0.8 Limits Typ. — — — — — — 0.48 1.00 120 10 — — — — — 2.1 1.3 Max. 2.80 0.55 2.80 0.55 — 0.95 0.53 1.50 140 — 12.0 12.5 12.5 13.0 — 2.6 — 0.35 0.65 — Unit mA mA mA mA V V V mA °C V V V V µs V V V Note 4 : Short circuit protection is functioning only for the lower-arms. Please select the external shunt resistance such that the SC trip-level is less than 1.7 times of the current rating. 5 : Over temperature protection (OT) outputs fault signal, when the LVIC temperature exceeds OT trip temperature level (OTt). In that case if the heat sink comes off DIP-IPM or fixed loosely, don’t reuse that DIP-IPM. (There is a possibility that junction temperature of power chips exceeded maximum Tj (150°C)). 6 : Fault signal is asserted only corresponding to a SC, a UV or an OT failure at lower side, and the FO pulse width is different for each failure modes. For SC failure, FO output is with a fixed width of 20µsec(min), but for UV or OT failure, FO output continuously during the whole UV or OT period, however, the minimum FO pulse width is 20µsec(min) for very short UV or OT period less than 20µsec. MECHANICAL CHARACTERISTICS AND RATINGS Condition Parameter Mounting screw : M3 Recommended : 0.69 N·m (Note 7) Mounting torque Weight Heat-sink flatness Note 7 : Plain washers (ISO 7089~7094) are recommended. (Note 8) Min. Limits Typ. Max. 0.59 — 0.78 N·m — –50 10 — — 100 g µm Unit Note 8: Flatness measurement position Measurement position 4.6mm + – DIP-IPM Heat sink side – + Heat sink side Aug. 2007 6 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21963-T/-AT/-CT/-TW TRANSFER-MOLD TYPE INSULATED TYPE RECOMMENDED OPERATION CONDITIONS Symbol Parameter VCC VD VDB ∆VD, ∆VDB tdead fPWM Supply voltage Control supply voltage Control supply voltage Control supply variation Arm shoot-through blocking time PWM input frequency IO Allowable r.m.s. current Condition Applied between P-N Applied between VP1-VNC, VN1-VNC Applied between VUFB-U, VVFB-V, VWFB-W For each input signal, TC ≤ 100°C TC ≤ 100°C, Tj ≤ 125°C VCC = 300V, VD = VDB = 15V, fPWM = 5kHz P.F = 0.8, sinusoidal PWM, (Note 9) fPWM = 15kHz Tj ≤ 125°C, TC ≤ 100°C PWIN(on) Allowable minimum input PWIN(off) pulse width (Note 10) Min. Limits Typ. Max. 0 13.5 13.0 –1 1.5 — 300 15.0 15.0 — — — 400 16.5 18.5 1 — 20 — — 5.0 — — 3.0 0.5 0.5 –5.0 — — — — — 5.0 Unit V V V V/µs µs kHz Arms VNC variation VNC Between VNC-N (including surge) Note 9 : The allowable r.m.s. current value depends on the actual application conditions. 10 : IPM might not make response if the input signal pulse width is less than the recommended minimum value. µs V Fig. 7 THE DIP-IPM INTERNAL CIRCUIT DIP-IPM VUFB P HVIC VP1 VCC VUB UP UP UOUT VNC VVFB VP IGBT1 Di1 VUS COM U IGBT2 VVB Di2 VOUT VP VVS VWFB WP V VWB WP IGBT3 Di3 IGBT4 Di4 IGBT5 Di5 IGBT6 Di6 WOUT VWS W LVIC UOUT VN1 VCC VOUT UN UN VN VN WN WN Fo Fo WOUT CIN VNO VNC GND N CIN Aug. 2007 7 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21963-T/-AT/-CT/-TW TRANSFER-MOLD TYPE INSULATED TYPE Fig. 8 TIMING CHART OF THE DIP-IPM PROTECTIVE FUNCTIONS [A] Short-Circuit Protection (Lower-side only with the external shunt resistor and CR filter) a1. Normal operation : IGBT ON and carrying current. a2. Short circuit detection (SC trigger). a3. IGBT gate hard interruption. a4. IGBT turns OFF. a5. FO outputs (tFO(min) = 20µs). a6. Input “L” : IGBT OFF. a7. Input “H” : IGBT ON. a8. IGBT OFF in spite of input “H”. Lower-side control input a6 a7 Protection circuit state SET Internal IGBT gate RESET a3 a2 a1 SC a4 Output current Ic a8 SC reference voltage Sense voltage of the shunt resistor CR circuit time constant DELAY Error output Fo a5 [B] Under-Voltage Protection (Lower-side, UVD) b1. Control supply voltage rising : After the voltage level reaches UVDr, the circuits start to operate when next input is applied. b2. Normal operation : IGBT ON and carrying current. b3. Under voltage trip (UVDt). b4. IGBT OFF in spite of control input condition. b5. FO outputs (tFO ≥ 20µs and FO outputs continuously during UV period). b6. Under voltage reset (UVDr). b7. Normal operation : IGBT ON and carrying current. Control input Protection circuit state Control supply voltage VD RESET UVDr b1 SET UVDt b2 RESET b6 b3 b4 b7 Output current Ic Error output Fo b5 Aug. 2007 8 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21963-T/-AT/-CT/-TW TRANSFER-MOLD TYPE INSULATED TYPE [C] Under-Voltage Protection (Upper-side, UVDB) c1. Control supply voltage rising : After the voltage level reaches UVDBr, the circuits start to operate when next input is applied. c2. Normal operation : IGBT ON and carrying current. c3. Under voltage trip (UVDBt). c4. IGBT OFF in spite of control input signal level, but there is no FO signal outputs. c5. Under voltage reset (UVDBr). c6. Normal operation : IGBT ON and carrying current. Control input Protection circuit state RESET RESET SET UVDBr Control supply voltage VDB c1 c5 UVDBt c3 c2 c4 c6 Output current Ic High-level (no fault output) Error output Fo [D] Over Temperature Protection (Lower-side, OT) d1. Normal operation : IGBT ON and carrying current. d2. LVIC temperature exceeds over temperature trip level (OTt). d3. IGBT OFF in spite of control input condition. d4. FO outputs during over temperature period, however, the minimum pulse width is 20µs. d5. LVIC temperature becomes under over temperature reset level. d6. Circuits start to operate normally when next input is applied. Control input RESET Protection circuit state SET OTt LVIC temperature RESET d5 d2 OTrh d1 d3 d6 Output current Ic d4 Fault output Fo Fig. 9 RECOMMENDED MCU I/O INTERFACE CIRCUIT 5V line DIP-IPM 10kΩ UP,VP,WP,UN,VN,WN MCU 3.3kΩ (min) Fo VNC(Logic) Note : The setting of RC coupling at each input (parts shown dotted) depends on the PWM control scheme and the wiring impedance of the printed circuit board. The DIP-IPM input section integrates a 3.3kΩ (min) pull-down resistor. Therefore, when using an external filtering resistor, pay attention to the turn-on threshold voltage. Fig. 10 WIRING CONNECTION OF SHUNT RESISTOR DIP-IPM Wiring inductance should be less than 10nH. Equivalent to the inductance of a copper pattern in dimension of width=3mm, thickness=100µm, length=17mm VNC N Shunt resistor Please make the GND wiring connection of shunt resistor to the VNC terminal as close as possible. Aug. 2007 9 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21963-T/-AT/-CT/-TW TRANSFER-MOLD TYPE INSULATED TYPE Fig. 11 AN EXAMPLE OF TYPICAL DIP-IPM APPLICATION CIRCUIT C1: Electrolytic capacitor with good temperature characteristics C2,C3: 0.22~2µF R-category ceramic capacitor for noise filtering C2 C1 VUFB C2 VVFB C2 C1 C1 VWFB Bootstrap negative electrodes should be connected to U, V, W terminals directly and separated from the main output wires. DIP-IPM P HVIC VP1 C3 UP VCC VUB UP UOUT U VUS VVB VP VP VOUT V VVS M VWB MCU WP VNC WP WOUT W COM VWS LVIC UOUT VN1 5V line VCC C3 VOUT UN VN WN Fo UN VN WN Long wiring here might cause short-circuit. WOUT Fo N VNC GND C CIN 15V line Long GND wiring here might generate noise to input and cause IGBT malfunction. B R1 C4 A Shunt resistor N1 Long wiring here might cause SC level fluctuation and malfunction. Note 1 : Input drive is High-Active type. There is a 3.3kΩ(min.) pull-down resistor integrated in the IC input circuit. To prevent malfunction, the wiring of each input should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on and turn-off threshold voltage. 2 : Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible. 3 : FO output is open drain type. It should be pulled up to the positive side of a 5V power supply by a resistor of about 10kΩ. 4 : To prevent erroneous protection, the wiring of A, B, C should be as short as possible. 5 : The time constant R1C4 of the protection circuit should be selected in the range of 1.5-2µs. SC interrupting time might vary with the wiring pattern. Tight tolerance, temp-compensated type is recommended for R1, C4. 6 : All capacitors should be mounted as close to the terminals of the DIP-IPM as possible. (C1: good temperature, frequency characteristic electrolytic type, and C2, C3: good temperature, frequency and DC bias characteristic ceramic type are recommended.) 7 : To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible. Generally a 0.1-0.22µF snubber between the P-N1 terminals is recommended. 8 : Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and leave another one open. 9 : It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction. 10 : If control GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended to connect control GND and power GND at only a point. Aug. 2007 10