MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21993-4 INTEGRATED POWER FUNCTIONS 600V/10A low-loss CSTBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS • • • • • For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection. For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC). Fault signaling : Corresponding to a SC fault (N-side IGBT), a UV fault (N-side supply). Input interface : 3~5V line (High Active). UL Recognized : Yellow Card No. E80276 APPLICATION AC100V~200V three-phase inverter drive for small power motor control. Fig. 1 PACKAGE OUTLINES (PS21993-4) Dimensions in mm 0.28 1.778 ±0.2 B A 38 ±0.5 20×1.778(=35.56) 35 ±0.3 TERMINAL CODE 3.5 16-0.5 29.2 ±0.5 24 ±0.5 Type name Lot No. 14.4 ±0.5 12 QR Code .6 R1 2- 3 MIN 18 (3.3) (3.5) 1 14.4 ±0.5 17 (1) 0.4 1.5 ±0.05 0.8 HEAT SINK SIDE 25 4-C1.2 0.4 8-0.6 0.28 14×2.54 (=35.56) 2.5 MIN 1.5 M 0.5 HEAT SINK SIDE 9.5±0.5 (2.656) 5.5±0.5 0.5 0.5 (1.2) IN (1.2) 0.5 (VNC) VUFB VVFB VWFB UP VP WP VP1 VNC * UN VN WN VN1 FO CIN VNC * NC NC NC N W V U P NC (0~5°) 2.54 ±0.2 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. (2.756) DETAIL A DETAIL B *) Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and leave another one open. Note : CSTBT is registered trademark of MITSUBISHI ELECTRIC CORPORATION in Japan. Sep. 2008 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE Fig. 2 LONG TERMINAL TYPE PACKAGE OUTLINES (PS21993-4A) 38 20×1.778(=35.56) 35 ±0.3 0.28 1.778 ±0.2 Dimensions in mm B A ±0.5 TERMINAL CODE 3.5 16-0.5 (3.5) 29.4 ±0.5 24 ±0.5 Type name Lot No. 0.8 14.4 ±0.5 12 QR Code .6 R1 2- (3.3) 1 14.4 ±0.5 17 (1) 0.4 1.5 ±0.05 3 MIN HEAT SINK SIDE 25 8-0.6 4-C1.2 0.4 18 0.28 2.54 ±0.2 0.5 2.5 MIN 0.5 (VNC) VUFB VVFB VWFB UP VP WP VP1 VNC * UN VN WN VN1 FO CIN VNC * NC NC NC N W V U P NC (0~5°) 14×2.54 (=35.56) 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 0.5 0.5 1.5 M IN (1.2) (1.2) 5.5±0.5 14±0.5 (2.656) (2.756) HEAT SINK SIDE DETAIL A DETAIL B *) Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and leave another one open. Fig. 3 ZIGZAG TERMINAL TYPE PACKAGE OUTLINES (PS21993-4C) 38 ±0.5 20×1.778(=35.56) 35 ±0.3 0.28 1.778 ±0.2 Dimensions in mm B A TERMINAL CODE 3.5 1.5 ±0.05 0.4 Type name Lot No. 3 MIN 18 0.8 HEAT SINK SIDE 0.4 25 8-0.6 0.28 (3.5) 14.4 ±0.5 29.2 ±0.5 33.7±0.5 24 ±0.5 QR Code .6 (0~5°) R1 2- 14.4 ±0.5 12 18.9 ±0.5 1 (1) 17 0.4 16-0.5 4-C1.2 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. (VNC) VUFB VVFB VWFB UP VP WP VP1 VNC * UN VN WN VN1 FO CIN VNC * NC NC NC N W V U P NC 2.54 ±0.2 (0~5°) 14×2.54 (=35.56) 0.5 0.5 1.5 M IN 9.5 5.5±0.5 (1.2) (1.2) (2.656) ±0.5 0.5 (2.756) HEAT SINK SIDE DETAIL A DETAIL B *) Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and leave another one open. Sep. 2008 2 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE Fig. 4 BOTH SIDES ZIGZAG TERMINAL TYPE PACKAGE OUTLINES (PS21993-4W) 38 20×1.778(=35.56) 35 ±0.3 0.28 1.778 ±0.25 Dimensions in mm B A ±0.5 3.5 TERMINAL CODE 1.5 ±0.05 Type name Lot No. (3.5) 29.2 ±0.5 35.2 ±0.6 24 ±0.5 QR Code .6 R1 2- 0.8 17.4 ±0.5 14.4 ±0.5 12 17.4 ±0.5 14.4 ±0.5 0.4 1 (1) 17 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 0.4 16-0.5 3 MIN HEAT SINK SIDE (0~5°) 4-C1.2 0.4 7-0.6 14×2.54 (=35.56) (0~5°) (1.8) 0.4 25 18 0.28 2.54 ±0.25 (VNC) VUFB VVFB VWFB UP VP WP VP1 VNC * UN VN WN VN1 FO CIN VNC * NC NC NC N W V U P NC 2.5 MIN 0.5 1.5 M 0.5 0.5 IN (1.2) (1.2) 5.5±0.5 11±0.5 (2.656) (2.756) HEAT SINK SIDE DETAIL A DETAIL B *) Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and leave another one open. QR Code is registered trademark of DENSO WAVE INCORPORATED in JAPAN and other countries. Fig. 5 INTERNAL FUNCTIONS BLOCK DIAGRAM (TYPICAL APPLICATION EXAMPLE) C1 : Electrolytic type with good temperature and frequency characteristics. The capacitance also depends on the PWM control strategy of the application system. C2 : 0.22µ-2µF ceramic capacitor with good temperature, frequency and DC bias characteristics. D1 : Bootstrap diode (VRRM=600V or more. trr=100ns or less) D2 : Zener diode (24V/1W) P-side input (PWM) Input signal conditioning Input signal conditioning Input signal conditioning Level shift Level shift Level shift Drive circuit Drive circuit C2 C1 D2 D1 UV lockout circuit Drive circuit Inrush limiting circuit P P-side IGBTS DIPIPM AC line input U V W M AC output Z C N1 N N-side IGBTS VNC CIN Z : Surge absorber C : AC filter(ceramic capacitor 2.2n -6.5nF) (Common-mode noise filter) Drive circuit Input signal conditioning N-side input (PWM) Fo logic Protection circuit (SC) UV lockout circuit FO FO output (5V line) VNC (15V line) D2 C2 C1 VD Sep. 2008 3 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE Fig. 6 EXTERNAL PART OF THE DIPIPM PROTECTION CIRCUIT DIPIPM Short Circuit Protective Function (SC) : SC protection is achieved by sensing the N-side DC-Bus current (through the external shunt resistor) after allowing a suitable filtering time (defined by the RC circuit). When the sensed shunt voltage exceeds the SC trip-level, all the N-side IGBTs are turned OFF and a fault signal (Fo) is output. Since the SC fault may be repetitive, it is recommended to stop the system when the Fo signal is received and check the fault. Drive circuit P IC (A) P-side IGBTS SC Protection Trip Level U V W N-side IGBTS External protection circuit N1 Shunt Resistor A N (Note 1) VNC C R Drive circuit CIN B C Collector current waveform Protection circuit 0 (Note 2) Note1: In the recommended external protection circuit, please select the RC time constant in the range 1.5~2.0µs. 2: To prevent erroneous protection operation, the wiring of A, B, C should be as short as possible. 2 tw (µs) MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCC VCC(surge) VCES ±IC ±ICP PC Tj Parameter Supply voltage Supply voltage (surge) Collector-emitter voltage Each IGBT collector current Each IGBT collector current (peak) Collector dissipation Junction temperature Condition Applied between P-N Ratings Applied between P-N TC = 25°C TC = 25°C, less than 1ms TC = 25°C, per 1 chip (Note 1) 450 500 600 10 20 27.0 –20~+125 Unit V V V A A W °C Note 1 : The maximum junction temperature rating of the power chips integrated within the DIPIPM is 150°C (@ TC ≤ 100°C). However, to ensure safe operation of the DIPIPM, the average junction temperature should be limited to Tj(ave) ≤ 125°C (@ TC ≤ 100°C). CONTROL (PROTECTION) PART Symbol VD VDB Parameter Control supply voltage Control supply voltage VIN Input voltage VFO IFO VSC Fault output supply voltage Fault output current Current sensing input voltage Condition Applied between VP1-VNC, VN1-VNC Applied between VUFB-U, VVFB-V, VWFB-W Applied between UP, VP, WP, UN, VN, WN-VNC Applied between FO-VNC Sink current at FO terminal Applied between CIN-VNC Ratings 20 20 Unit V V –0.5~VD+0.5 V –0.5~VD+0.5 1 –0.5~VD+0.5 V mA V Sep. 2008 4 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE TOTAL SYSTEM Symbol Condition VD = 13.5~16.5V, Inverter part Tj = 125°C, non-repetitive, less than 2µs (Note 2) Parameter VCC(PROT) Self protection supply voltage limit (short circuit protection capability) Module case operation temperature TC Tstg Storage temperature Viso 60Hz, Sinusoidal, 1 minute, Between pins and heat sink plate Isolation voltage Ratings Unit 400 V –20~+100 –40~+125 °C °C 1500 Vrms Note 2: TC measurement point Control terminals 11.6mm DIPIPM 3mm IGBT chip position TC point FWDi chip position Heat sink side Power terminals THERMAL RESISTANCE Symbol Rth(j-c)Q Rth(j-c)F Condition Parameter Junction to case thermal resistance (Note 3) Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min. — Limits Typ. — Max. 3.7 °C/W — — 4.5 °C/W Unit Note 3 : Grease with good thermal conductivity and long-term quality should be applied evenly with +100µm~+200µm on the contacting surface of DIPIPM and heat sink. The contacting thermal resistance between case and heat sink (Rth(c-f)) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3°C/W when the grease thickness is 20µm and the thermal conductivity is 1.0W/mK. ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Condition Parameter Collector-emitter saturation voltage FWDi forward voltage Switching times IC = 10A, Tj = 25°C VD = VDB = 15V VIN = 5V IC = 10A, Tj = 125°C Tj = 25°C, –IC = 10A, VIN = 0V VCC = 300V, VD = VDB = 15V IC = 10A, Tj = 125°C, VIN = 0 ↔ 5V Inductive load (upper-lower arm) Collector-emitter cut-off current Tj = 25°C VCE = VCES Tj = 125°C Min. — — — 0.60 — — — — — — Limits Typ. 1.60 1.70 1.70 1.10 0.30 0.40 1.50 0.40 — — Max. 2.10 2.20 2.20 1.70 — 0.60 2.35 1.00 1 10 Unit V V µs µs µs µs µs mA Sep. 2008 5 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE CONTROL (PROTECTION) PART Symbol ID VFOH VFOL VSC(ref) IIN UVDBt UVDBr UVDt UVDr tFO Vth(on) Vth(off) Vth(hys) Parameter Condition VD = VDB = 15V VIN = 5V VD = VDB = 15V VIN = 0V Total of VP1-VNC, VN1-VNC VUFB-U, VVFB-V, VWFB-W Total of VP1-VNC, VN1-VNC VUFB-U, VVFB-V, VWFB-W VSC = 0V, FO terminal pull-up to 5V by 10kΩ VSC = 1V, IFO = 1mA VD = 15V (Note 4) VIN = 5V Trip level Reset level Tj ≤ 125°C Trip level Reset level (Note 5) Circuit current Fault output voltage Short circuit trip level Input current Control supply under-voltage protection Fault output pulse width ON threshold voltage OFF threshold voltage ON/OFF threshold hysteresis voltage Applied between UP, VP, WP, UN, VN, WN-VNC Min. — — — — 4.9 — 0.43 0.70 10.0 10.5 10.3 10.8 20 — 0.8 Limits Typ. — — — — — — 0.48 1.00 — — — — — 2.1 1.3 Max. 2.80 0.55 2.80 0.55 — 0.95 0.53 1.50 12.0 12.5 12.5 13.0 — 2.6 — 0.35 0.65 — Unit mA mA mA mA V V V mA V V V V µs V V V Note 4 : Short circuit protection works only for the N-side. Please select the external shunt resistance such that the SC trip-level is up to 1.7 times of the current rating. 5 : Fault signal is asserted only corresponding to a SC or a UV failure at N-side, and the Fo pulse width is different for each failure modes. For SC failure, Fo output is with a fixed width of 20µs(min), but for UV failure, Fo outputs continuously during the whole UV period, however, the minimum Fo pulse width is 20µs(min) for very short UV period less than 20µs. MECHANICAL CHARACTERISTICS AND RATINGS Condition Parameter Mounting screw : M3 Recommended : 0.69 N·m (Note 6) Mounting torque Weight Heat-sink flatness Note 6 : Plain washers (ISO 7089~7094) are recommended. (Note 7) Min. Limits Typ. Max. 0.59 — 0.78 N·m — –50 10 — — 100 g µm Unit Note 7: Flatness measurement position Measurement position 4.6mm + – 17.5mm Heat sink side – + Heat sink side Sep. 2008 6 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE RECOMMENDED OPERATION CONDITIONS Symbol Parameter VCC VD VDB ∆VD, ∆VDB tdead fPWM Supply voltage Control supply voltage Control supply voltage Control supply variation Arm shoot-through blocking time PWM input frequency IO Allowable rms current Condition Applied between P-N Applied between VP1-VNC, VN1-VNC Applied between VUFB-U, VVFB-V, VWFB-W For each input signal, TC ≤ 100°C TC ≤ 100°C, Tj ≤ 125°C VCC = 300V, VD = VDB = 15V, fPWM = 5kHz P.F = 0.8, sinusoidal PWM, (Note 8) fPWM = 15kHz Tj ≤ 125°C, TC ≤ 100°C PWIN(on) Allowable minimum input PWIN(off) pulse width (Note 9) Min. Limits Typ. Max. 0 13.5 13.0 –1 1.5 — 300 15.0 15.0 — — — 400 16.5 18.5 1 — 20 — — 5.5 — — 3.5 0.5 0.5 –5.0 — — — — — 5.0 Unit V V V V/µs µs kHz Arms VNC variation VNC Between VNC-N (including surge) Note 8 : The allowable rms current value depends on the actual application conditions. 9 : IPM might not make response if the input signal pulse width is less than the recommended minimum value. µs V Fig. 7 THE DIPIPM INTERNAL CIRCUIT VUFB P HVIC VP1 VCC VUB UP UP UOUT VNC VVFB VP IGBT1 Di1 VUS COM U IGBT2 VVB Di2 VOUT VP VVS VWFB WP V VWB WP IGBT3 Di3 IGBT4 Di4 IGBT5 Di5 IGBT6 Di6 WOUT VWS W LVIC UOUT VN1 VCC VOUT UN UN VN VN WN WN Fo Fo WOUT CIN VNO VNC GND N CIN Sep. 2008 7 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE Fig. 8 TIMING CHART OF THE PROTECTIVE FUNCTIONS [A] Short-Circuit Protection (N-side only with the external shunt resistor and RC filter) a1. Normal operation : IGBT ON and carrying current. a2. Short circuit is detected (SC trigger). a3. All N-side IGBTs’ gates are hard interrupted. a4. All N-side IGBTs turn OFF. a5. FO is output (tFO(min) = 20µs). a6. Input “L”. a7. Input “H”. But IGBT is still OFF state during outputting FO. a8. IGBT turns ON when L→H signal is input after FO is reset. N-side control input a6 a7 SET Protection circuit state Internal IGBT gate RESET a3 a1 a2 SC a4 a8 Output current Ic SC reference voltage Sense voltage of the shunt resistor RC circuit time constant delay Fault output Fo a5 [B] Under-Voltage Protection (N-side, UVD) b1. Control supply voltage VD rises : After VD level rises over under voltage reset level (UVDr), the circuits start to operate when next input is applied. b2. Normal operation : IGBT ON and carrying current. b3. VD level dips to under voltage trip level. (UVDt). b4. All N-side IGBTs turn OFF in spite of control input condition. b5. FO is output. (tFO ≥ 20µs and FO outputs continuously during UV period). b6. VD level rises over UVDr. b7. Normal operation : IGBT ON and carrying current. Control input Protection circuit state Control supply voltage VD RESET UVDr b1 SET UVDt b2 RESET b6 b3 b4 b7 Output current Ic Error output Fo b5 Sep. 2008 8 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE [C] Under-Voltage Protection (P-side, UVDB) c1. Control supply voltage VDB rises : After VDB level rises over under voltage reset level (UVDBr), the circuits start to operate when next input is applied. c2. Normal operation : IGBT ON and carrying current. c3. VDB level dips to under voltage trip level. (UVDBt). c4. P-side IGBT turns OFF in spite of control input signal level, but there is no FO signal output. c5. VDB level rises over UVDBr. c6. Normal operation : IGBT ON and carrying current. Control input Protection circuit state RESET RESET SET UVDBr Control supply voltage VDB c1 UVDBt c2 c5 c3 c4 c6 Output current Ic High-level (no fault output) Error output Fo Fig. 9 AN INSTANCE OF INTERFACE CIRCUIT 5V line DIPIPM 10kΩ UP,VP,WP,UN,VN,WN MCU 3.3kΩ (min) Fo VNC(Logic) Note : The setting of RC coupling at each input (parts shown dotted) depends on the PWM control scheme and the wiring impedance of the printed circuit board. Input circuit integrates a 3.3kΩ (min) pull-down resistor. Therefore, when using an external filtering resistor, pay attention to the turn-on threshold voltage. Fig. 10 WIRING CONNECTION OF SHUNT RESISTOR DIPIPM Wiring inductance should be less than 10nH. Equivalent to the inductance of a copper pattern in dimension of width=3mm, thickness=100µm, length=17mm VNC N Shunt resistor Please connect GND wiring from VNC terminal to the shunt resistor terminal as close as possible. Sep. 2008 9 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE Fig. 11 AN EXAMPLE OF TYPICAL DIPIPM APPLICATION CIRCUIT C2 C1 VUFB C2 VVFB C2 C1 C1 Bootstrap negative electrodes should be connected to U, V, W terminals directly and separated from the main output wires. VWFB P HVIC VP1 C3 UP VCC VUB UP UOUT U VUS VVB VP VP VOUT V VVS M VWB MCU WP VNC WP WOUT W COM VWS LVIC UOUT VN1 5V line VCC C3 VOUT UN VN WN Fo UN VN WN Long wiring here might cause short-circuit. WOUT Fo N VNC GND C CIN 15V line Long GND wiring here might generate noise to input and cause IGBT malfunction. B R1 C4 A Shunt resistor N1 Long wiring here might cause SC level fluctuation and malfunction. Note 1 : Input drive is High-active type. There is a 3.3kΩ (Min.) pull-down resistor in the input circuit of IC. To prevent malfunction, the wiring of each input should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on and turnoff threshold voltage. 2 : Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible. 3 : Fo output is open drain type. It should be pulled up to the MCU or control power supply (e.g. 5V, 15V) by a resistor that makes IFo up to 1mA. 4 : To prevent erroneous protection, the wiring of A, B, C should be as short as possible. 5 : The time constant R1C4 of the protection circuit should be selected in the range of 1.5-2µs. SC interrupting time might vary with the wiring pattern. Tight tolerance, temp-compensated type is recommended for R1, C4 6 : All capacitors should be mounted as close to the terminals of DIPIPM as possible. (C1: good temperature, frequency characteristic electrolytic type, and C2, C3 (0.22~2µF) : good temperature, frequency and DC bias characteristic ceramic type are recommended.) 7 : To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible. Generally a 0.1-0.22µF snubber between the P-N1 terminals is recommended. 8 : Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND and leave the other open. 9 : It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction. 10 : If control GND is connected with power GND by common broad pattern, it may cause malfunction by power GND fluctuation. It is recommended to connect control GND and power GND at only a point N1. 11 : High voltage (VRRM =600V or more) and fast recovery type (trr=100ns or less) diodes should be used in the bootstrap circuit. Sep. 2008 10