SANYO 2SA1705

2SA1705
Ordering number : EN3025A
SANYO Semiconductors
DATA SHEET
2SA1705
PNP Epitaxial Planar Silicon Transistor
Low-Frequency Power Amplifier Applications
Applicaitons
•
Voltage regulators, relay drivers, lamp drivers
Features
•
•
Adoption of FBET process
Fast switching speed
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Unit
--60
V
--50
V
VEBO
IC
ICP
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
PC
Tj
Storage Temperature
Tstg
°C
• Package : NMP(Taping)
• JEITA, JEDEC : SC-71
• Minimum Packing Quantity : 2,500 pcs./box
2SA1705S-AN
2SA1705T-AN
1.05
Electrical Connection
2
1.0
A1705
1.0
4.5
Marking(NMP(Taping))
RANK
LOT No.
A
W
°C
Product & Package Information
2.5
--2
0.9
150
unit : mm (typ)
7540-001
1.45
V
A
--55 to +150
Package Dimensions
6.9
--5
--1
3
0.6
1.0
0.5
1
15.0
0.9
1
2.54
2
3
0.45
2.54
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP(Taping)
http://www.sanyosemi.com/en/network/
82212 TKIM TC-00002800/93003TN (KT)/83098HA(KT)/5249MO, TS No.3025-1/6
2SA1705
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Output Capacitance
Collector-to-Base Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
min
typ
Unit
max
ICBO
IEBO
VCB=--50V, IE=0A
VEB=--4V, IC=0A
hFE1
VCE=--2V, IC=--100mA
hFE2
VCE=--2V, IC=--1A
fT
VCE(sat)
VCE=--10V, IC=--50mA
150
IC=--500mA, IB=--50mA
--180
--500
VBE(sat)
Cob
IC=--500mA, IB=--50mA
--0.9
--1.2
140*
--100
nA
--100
nA
400*
30
MHz
mV
V
VCB=--10V, f=1MHz
IC=--10μA, IE=0A
--60
V
IC=--1mA, RBE=∞
--50
V
V(BR)EBO
ton
IE=--10μA, IC=0A
--5
tstg
tf
See specified Test Circuit.
V(BR)CBO
V(BR)CEO
Collector-to-Emitter Breakdown Voltage
Ratings
Conditions
12
pF
V
40
ns
300
ns
30
ns
* : The 2SA1705 is classified by 100mA hFE as follows :
Rank
S
T
hFE
140 to 280
200 to 400
Switching Time Test Circuit
2SA1705
IB1
IB2
PW=20μs
D.C.≤1%
OUTPUT
INPUT
VR
RB
50Ω
RL
+
+
100μF
470μF
VBE=5V
VCC= --25V
IC=10IB1= --10IB2= --500mA
Ordering Information
Package
Shipping
2SA1705S-AN
Device
NMP(Taping)
2,500pcs./box
2SA1705T-AN
NMP(Taping)
2,500pcs./box
IC -- VCE
--1.0
0mA
mA --1
IC -- VBE
VCE= --2V
--8mA
--1000
--6mA
--4mA
--0.6
--0.4
--2mA
--1mA
--0.2
--800
--600
Ta=75
°C
25°C
--25°C
--0.8
0
0
Pb Free
--1200
Collector Current, IC -- mA
Collector Current, IC -- A
2
--1
memo
--400
--200
IB=0
--1
--2
--3
--4
Collector-to-Emitter Voltage, VCE -- V
0
--5
ITR04270
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
--1.2
ITR04272
No.3025-2/6
2SA1705
hFE -- IC
1000
Ta=75°C
DC Current Gain, hFE
3
25°C
2
VCE= --10V
Gain-Bandwidth Product, f T -- MHz
7
5
--25°C
100
7
5
3
2
10
7
5
7 --10
2
3
5
7 --100
2
3
5
7 --1000
Collector Current, IC -- mA
2
100
7
5
3
2
5
3
7
2
--10
3
2
10
7
5
3
5
7 --100
2
3
2
5
ITR04276
VCE(sat) -- IC
--1000
f=1MHz
3
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Output Capacitance, Cob -- pF
2
ITR04274
Cob -- VCB
5
IC / IB=10
7
5
3
2
--100
7
5
5°C
7
Ta=
3
C
25°
C
--25°
2
--10
5
7 --1.0
2
3
5
7 --10
2
3
5
Collector-to-Base Voltage, VCB -- V
7 --100
ITR04278
5
3
IC / IB=10
7
2
Collector Current, IC -- A
Ta= --25°C
7
25°C
75°C
5
5
7 --100
2
3
5
7 --1000
2
ITR04280
ASO
ICP= --2.0A
1
0m 0ms
s
10
s
--1.0
3
IC= --1.0A
--1.0
2
2
1m
5
3
7 --10
Collector Current, IC -- mA
VBE(sat) -- IC
--10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
10
5
7
5
DC
3
op
era
2
tio
n
--0.1
7
5
3
3
2
2
--0.01
5
7 --10
2
3
5
7 --100
2
3
5
Collector Current, IC -- mA
7--1000
2
ITR04282
PC -- Ta
1.0
Collector Dissipation, PC -- W
f T -- IC
5
VCE= --2V
5
Ta=25°C
Single pulse
7
--1.0
2
3
5
7
--10
2
3
Collector-to-Emitter Voltage, VCE -- V
5
7
ITR04284
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR04285
No.3025-3/6
2SA1705
Bag Packing Specification
2SA1705S-AN, 2SA1705T-AN
No.3025-4/6
2SA1705
Outline Drawing
2SA1705S-AN, 2SA1705T-AN
Mass (g) Unit
0.275 mm
* For reference
No.3025-5/6
2SA1705
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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This catalog provides information as of August, 2012. Specifications and information herein are subject
to change without notice.
PS No.3025-6/6