BCP69T1 PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. http://onsemi.com Features MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT • High Current: IC = −1.0 A • The SOT−223 Package can be soldered using wave or reflow. • SOT−223 package ensures level mounting, resulting in improved • • thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. NPN Complement is BCP68 Pb−Free Package is Available COLLECTOR 2,4 BASE 1 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCEO −20 Vdc Collector−Base Voltage VCBO −25 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current IC −1.0 Adc Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −65 to 150 °C Symbol Max Unit RqJA 83.3 °C/W TL 260 °C 10 Sec Rating Operating and Storage Temperature Range EMITTER 3 MARKING DIAGRAM 4 1 2 AYW CEG G 3 SOT−223 (TO−261) CASE 318E STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Ambient (Surface Mounted) Lead Temperature for Soldering, 0.0625 in from case Time in Solder Bath Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. CE A Y W G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† BCP69T1 SOT−223 1000 / Tape & Reel BCP69T1G SOT−223 (Pb−Free) 1000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 October, 2008 − Rev. 8 1 Publication Order Number: BCP69T1/D BCP69T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector−Emitter Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CES −25 − − Vdc Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −20 − − Vdc Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc Collector−Base Cutoff Current (VCB = − 25 Vdc, IE = 0) ICBO − − −10 mAdc Emitter−Base Cutoff Current (VEB = − 5.0 Vdc, IC = 0) IEBO − − −10 mAdc 50 85 60 − − − − 375 − Characteristics OFF CHARACTERISTICS ON CHARACTERISTICS hFE DC Current Gain (IC = − 5.0 mAdc, VCE = −10 Vdc) (IC = − 500 mAdc, VCE = −1.0 Vdc) (IC = −1.0 Adc, VCE = −1.0 Vdc) − Collector−Emitter Saturation Voltage (IC = −1.0 Adc, IB = −100 mAdc) VCE(sat) − − −0.5 Vdc Base−Emitter On Voltage (IC = −1.0 Adc, VCE = −1.0 Vdc) VBE(on) − − −1.0 Vdc fT − 60 − MHz DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mAdc, VCE = − 5.0 Vdc) http://onsemi.com 2 BCP69T1 hFE , CURRENT GAIN 200 100 70 50 VCE = -1.0 V TJ = 25°C 20 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) TYPICAL ELECTRICAL CHARACTERISTICS 300 200 100 VCE = -10 V TJ = 25°C f = 30 MHz 70 50 30 -10 Figure 1. DC Current Gain -100 IC, COLLECTOR CURRENT (mA) -1000 Figure 2. Current Gain Bandwidth Product 160 -1.0 TJ = 25°C TJ = 25°C C, CAPACITANCE (pF) -0.6 V(BE)sat @ IC/IB = 10 V(BE)on @ VCE = -1.0 V -0.4 -0.2 0 -1.0 120 80 Cib 40 V(CE)sat @ IC/IB = 10 Cob 0 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Cob Cib -5.0 -1.0 -1.0 -2.0 -1.5 -3.0 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Saturation and “ON” Voltages Figure 4. Capacitances 10 10 ms IC, COLLECTOR CURRENT (A) V, VOLTAGE (VOLTS) -0.8 1s 100 ms 1 ms 1.0 Thermal Limit 0.1 Single Pulse Test @ TA = 25°C 0.01 0.1 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 5. Safe Operating Area http://onsemi.com 3 100 -2.0 -4.0 -2.5 -5.0 BCP69T1 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE M D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 HE 1 2 3 b e1 e C q A 0.08 (0003) DIM A A1 b b1 c D E e e1 L1 HE E A1 q STYLE 1: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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