ONSEMI BSP19AT1G

BSP19AT1G
NPN Silicon Expitaxial
Transistor
This family of NPN Silicon Epitaxial transistors is designed for use
as a general purpose amplifier and in switching applications. The
device is housed in the SOT-223 package which is designed for
medium power surface mount applications.
Features
 High Voltage: V(BR)CEO of 250 and 350 V
 The SOT-223 Package Can Be Soldered Using Wave or Reflow
 SOT-223 Package Ensures Level Mounting, Resulting in Improved
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SOT--223 PACKAGE
NPN SILICON HIGH VOLTAGE
TRANSISTOR SURFACE MOUNT
Thermal Conduction, and Allows Visual Inspection of Soldered Joints
 The Formed Leads Absorb Thermal Stress During Soldering,




COLLECTOR 2,4
Eliminating the Possibility of Damage to the Die
PNP Complement is BSP16T1
Moisture Sensitivity Level (MSL): 1
ESD: Human Body Model (HBM) = 4 KV
Machine Model (MM) = 400 V
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
BASE
1
EMITTER 3
MARKING
DIAGRAM
4
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage (Open Base)
VCEO
350
Vdc
Collector-Base Voltage (Open Emitter)
VCBO
400
Vdc
Emitter-Base Voltage (Open Collector)
VEBO
5.0
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
0.8
W
6.4
mW/C
Collector Current (DC)
1
4
Collector
2
3
CASE 318E
TO-261AA
STYLE 1
AYW
SP19A G
G
1
Base
THERMAL CHARACTERISTICS
Characteristic
Total Power Dissipation @ TA = 25C
(Note 1)
Derate above 25C
Thermal Resistance, Junction--to--Ambient
RθJA
156
C/W
Junction and Storage Temperature Range
Tstg
--65 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum
recommended footprint.
2
Collector
3
Emitter
A
= Assembly Location
Y
= Year
W
= Work Week
SP19A = Specific Device Code
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
BSP19AT1G
SOT--223
(Pb--Free)
1000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
September, 2010 -- Rev. 8
1
Publication Order Number:
BSP19AT1/D
BSP19AT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Symbol
Characteristics
Min
Max
350
--
--
20
--
10
40
--
70
--
--
0.5
--
1.3
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Collector-Base Cutoff Current
(VCB = 400 Vdc, IE = 0)
ICBO
Emitter-Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
Vdc
nAdc
mAdc
ON CHARACTERISTICS (Note 2)
hFE
DC Current Gain
(IC = 20 mAdc, VCE = 10 Vdc)
Current-Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz)
fT
Collector-Emitter Saturation Voltage
(IC = 50 mAdc, IB = 4.0 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 50 mAdc, IB = 4.0 mAdc)
VBE(sat)
2. Pulse Test: Pulse Width  300 ms, Duty Cycle = 2.0%
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2
-MHz
Vdc
Vdc
BSP19AT1G
1000
VCE(sat), COLLECTOR--EMITTER
SATURATION VOLTAGE (V)
1.2
hFE, DC CURRENT GAIN
VCE = 10 V
TJ = 125C
100
TJ = 25C
TJ = --55C
10
1
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC/IB = 10
1
0.8
TJ = 125C
0.6
0.4
TJ = 25C
0.2
1
TJ = -- 55C
0.8
TJ = 25C
TJ = 125C
0.2
10000
fτ, CURRENT--GAIN -- BANDWIDTH
PRODUCT (MHz)
VBE(on), BASE--EMITTER ON VOLTAGE (V)
1
0.001
0.01
1
TJ = -- 55C
0.8
0.6
TJ = 25C
TJ = 125C
0.4
0.2
0
0.0001
0.001
0.01
1
Figure 4. Base ON Voltage
100
10
0.1
VCE = 10 V
1
Figure 3. Base Saturation Voltage
100
1
1.2
IC, COLLECTOR CURRENT (A)
TJ = 25C
f = 5.0 MHz
VGS = 10 V
1000
0.1
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
VBE(sat), BASE--EMITTER SATURATION
VOLTAGE (V)
IC/IB = 10
0
0.0001
0.01
Figure 2. Collector Saturation Voltage
1.2
0.4
0.001
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
0.6
TJ = -- 55C
0
0.0001
1
10
CIBO
10
COBO
1
100
TJ = 25C
f = 1.0 MHz
VCE = 10 V
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain -- Bandwidth Product
Figure 6. Capacitance
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3
1000
BSP19AT1G
PACKAGE DIMENSIONS
SOT--223 (TO--261)
CASE 318E--04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
1
2
3
b
e1
e
A1
C
θ
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0
θ
L
STYLE 1:
PIN 1.
2.
3.
4.
L1
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
----------1.75
2.00
7.00
7.30
10
--
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
-----0.069
0.276
--
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
-----0.078
0.287
10
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BSP19AT1/D