Preliminary Datasheet RJK0234DNS 25V, 35A, 5.8mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS1073EJ0130 Rev.1.30 May 23, 2013 Features • • • • • • • Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PVSN0008JD-A (Package name: 8pin HVSON(3333)) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 Ratings 25 +10,-8 35 140 Unit V V A A IDR IAP Note 2 EAS Note 2 Pch Note3 θch-c Note3 Tch Tstg 35 21 55 30 4.17 150 –55 to +150 A A mJ W °C/W °C °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C R07DS1073EJ0130 Rev.1.30 May 23, 2013 Page 1 of 6 RJK0234DNS Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 25 — — 0.9 — — — — — — — — — — — — — Typ — — — — 4.8 5.4 80 1050 880 66 0.6 7.3 1.9 1.4 2.8 1.9 13.6 Max — ±0.1 1 1.4 5.8 6.8 — 1470 — — 1.6 — — — — — — Unit V μA μA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns — — — 3.3 0.84 10.5 — 1.09 — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = +10/-8 V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 17.5 A, VGS = 8 V Note4 ID = 17.5 A, VGS = 4.5 V Note4 ID = 17.5 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 35 A VGS = 8 V, ID = 17.5 A VDD ≅ 10 V RL = 0.57 Ω Rg = 4.7 Ω IF = 35 A, VGS = 0 Note4 IF =35 A, VGS = 0 diF/ dt = 500 A/ μs Notes: 4. Pulse test R07DS1073EJ0130 Rev.1.30 May 23, 2013 Page 2 of 6 RJK0234DNS Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 30 20 150 1 Tc = 25 °C 0.1 1 shot Pulse 0.1 1 200 10 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 4.5 V 8V 2.1 V Pulse Test Drain Current ID (A) 40 2.0 V 30 1.9 V 20 1.8 V 10 40 VDS = 5 V Pulse Test 30 20 10 25°C Tc = 75°C VGS = 1.7 V Drain to Source Saturation Voltage VDS(on) (mV) 0 100 Case Temperature Tc (°C) 50 Drain Current ID (A) PW = 10 ms Operation in this area is limited by RDS(on) n 100 10 tio 50 s ra 0 1m pe 10 100 O Drain Current ID (A) 1000 DC Channel Dissipation Pch (W) 40 2 4 6 –25°C 8 10 0 1 2 3 5 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source On State Resistance vs. Drain Current 100 120 Pulse Test Pulse Test 90 30 10 60 ID = 10 A 30 5A VGS = 4.5 V 8V 3 2A 0 2 4 6 8 10 Gate to Source Voltage VGS (V) R07DS1073EJ0130 Rev.1.30 May 23, 2013 1 1 3 10 30 100 300 1000 Drain Current ID (A) Page 3 of 6 RJK0234DNS Preliminary Static Drain to Source On State Resistance vs. Temperature Typical Capacitance vs. Drain to Source Voltage 10 10000 Pulse Test 3000 Capacitance C (pF) ID = 2 A, 5 A, 10A 8 VGS = 4.5 V 6 4 2 A, 5 A, 10A 8V 2 0 25 50 75 Coss 300 100 Crss 25 20 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Reverse Drain Current vs. Source to Drain Voltage VGS 8 VDD = 20 V 10 V 30 6 VDS 4 10 2 VDD = 20 V 10 V 0 3 6 9 0 15 12 50 Reverse Drain Current IDR (A) 10 40 0 10 Case Temperature Tc (°C) ID = 35 A 20 10 0 100 125 150 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Ciss 1000 30 0 –25 50 VGS = 0 f = 1 MHz 8V Pulse Test 5V 40 30 20 VGS = 0, –5 V 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Gate Charge Qg (nc) Maximum Avalanche Energy vs. Channel Temperature Derating Avalanche Energy E AS (mJ) 100 IAP = 21 A VDD = 15 V duty < 0.1% Rg ≥ 50 Ω 80 60 40 20 0 25 50 75 100 125 150 Channel Temperature Tch (°C) R07DS1073EJ0130 Rev.1.30 May 23, 2013 Page 4 of 6 RJK0234DNS Preliminary Normalized Transient Thermal Impedance vs. Pulse Width 3 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 PDM D= 2 e 0.0 ls 01 t pu . 0 ho 1s 0.03 PW T PW T 0.01 1m 10 m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform EAS = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 8V 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 8V 10% 10% VDS = 10 V 90% td(on) R07DS1073EJ0130 Rev.1.30 May 23, 2013 10% tr 90% td(off) tf Page 5 of 6 RJK0234DNS Preliminary Package Dimensions Ordering Information Orderable Part Number RJK0234DNS-00-J5 Note: Quantity 3000 pcs Shipping Container Taping Package 8pin HVSON(3333) 0.028g TYP The symbol of 2nd "-" is occasionally presented as "#". R07DS1073EJ0130 Rev.1.30 May 23, 2013 Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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