Preliminary Datasheet RJK2062JPK 200 V - 80 A - N Channel Power MOS FET High Speed Power Switching R07DS0488EJ0100 Rev.1.00 Sep 19, 2012 Features For Automotive applications AEC-Q101 compliant Low on-resistance : RDS(on) = 17 m typ. Low input capacitance : Ciss = 6800 pF typ Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 2, 4 D 4 1. Gate 2. Drain 3. Source 4. Drain 1G 1 2 S 3 3 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 Ratings 200 20 80 160 80 160 Unit V V A A A A IAP Note2 EAR Note2 Pch Note3 Tch Note4 Tstg 40 107 180 175 –55 to +150 A mJ W C C PW 10s duty cycle 1% Tch = 25C, Rg 50 Tc = 25C AEC-Q101 compliant Thermal Impedance Characteristics Channel to case thermal impedance ch-c: 0.833C/W R07DS0488EJ0100 Rev.1.00 Sep 19, 2012 Page 1 of 6 RJK2062JPK Preliminary Electrical Characteristics (Ta = 25C) Item Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Symbol IGSS IDSS VGS(off) RDS(on) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min — — 2.5 — Typ — — — 17 Max 10 10 3.5 22 Unit A A V m — — — — — — — — — — — — 6800 1200 190 95 28 15 35 11 90 8.5 0.9 180 — — — — — — — — — — 1.17 — pF pF pF nC nC nC ns ns ns ns V ns Test Conditions VGS = 20 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA , VDS = 10 V ID = 40 A, VGS = 10 V Note5 VDS = 10V, VGS = 0, f = 1 MHz VDD = 25 V, VGS = 10 V, ID = 40 A ID = 40 A, RL = 0.75 , VGS = 10 V, RG = 4.7 IF = 80 A, VGS = 0 Note5 IF = 80 A, VGS = 0 diF/dt = 100 A/s 5. Pulse test R07DS0488EJ0100 Rev.1.00 Sep 19, 2012 Page 2 of 6 RJK2062JPK Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 Tc = 25°C 10 Drain Current ID (A) 10 DC Operation (Tc = 25°C) 1 0.1 PW = 10 ms (1shot) 0.01 Operation in this area is limited by RDS(on) 0 50 100 150 0.001 0.1 200 Case Temperature Tc (°C) 60 4.4 V 40 4.3 V Drain Current ID (A) Drain Current ID (A) VDS = 10 V Pulse Test 4.6 V 20 4.1 V VGS = 0 V 0 2 4 6 8 1000 Typical Transfer Characteristics 5V 80 100 10 100 Tc = 25°C Pulse Test 10 V 1 Drain to Source Voltage VDS (V) Typical Output Characteristics 100 10 1 Tc = 175°C 25°C 0.1 −40°C 0.01 0.001 0 10 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source on State Resistance vs. Gate to Source Voltage Drain to Source on State Resistance vs. Drain Current 60 Tc = 175°C 50 40 30 20 25°C −40°C 10 0 ID = 40 A Pulse Test 0 4 8 12 16 20 Gate to Source Voltage VGS (V) R07DS0488EJ0100 Rev.1.00 Sep 19, 2012 Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source on State Resistance RDS(on) (mΩ) μs s 50 μs 100 1m 150 100 0 200 10 Channel Dissipation Pch (W) 250 100 Tc = 25°C VGS = 10 V Pulse Test 10 1 1 10 100 Drain Current ID (A) Page 3 of 6 RJK2062JPK Preliminary Typical Capacitance vs. Drain to Source Voltage 50 100000 30 20 10 0 50 100 150 1000 Crss 100 0 5 10 15 20 25 30 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Reverse Drain Current vs. Source to Drain Voltage 80 VGS 16 12 VDS 40 8 20 4 VDD = 50 V 25 V 10 V 40 80 Tc = 25°C ID = 80 A 120 160 0 200 100 IDR (A) 20 VDD = 10 V 25 V 50 V 0 Ciss Coss 200 100 60 Tc = 25°C VGS = 0 10000 f = 1 MHz 10 0 −50 Reverse Drain Current 40 Capacitance C (pF) ID = 40 A VGS = 10 V Pulse Test Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source on State Resistance vs. Temperature Tc = 25°C Pulse Test 80 60 10 V 40 VGS = 0 V, −5 V 20 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Gate Charge Qg (nC) Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 200 IAP = 40 A VDD = 50 V duty < 0.1 % Rg ≥ 50 Ω 160 120 80 40 0 25 75 125 175 Channel Temperature Tch (°C) R07DS0488EJ0100 Rev.1.00 Sep 19, 2012 Page 4 of 6 RJK2062JPK Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.1 0.05 θch – c(t) = γs (t) • θch – c θch – c = 0.833°C/W, Tc = 25°C 0.02 0.01 0.01 e uls tp o sh PDM 1 PW T D= PW T 0.001 10 μ 100 μ 1m 10 m Pulse Width 100 m 10 PW (S) Avalanche Test Circuit Avalanche Waveform L VDS Monitor 1 EAR = 1 2 L • IAP2 • VDSS VDSS – VDD IAP Monitor V (BR)DSS Rg D. U. T IAP VDD VDS Vin 15 V ID 50 Ω 0 VDD Switching Time Test Circuit 90% Vout Monitor Vin Monitor D.U.T. RL 4.7 Ω Vin 10 V Waveform Vin Vout VDD = 50 V 10% 90% td(on) R07DS0488EJ0100 Rev.1.00 Sep 19, 2012 10% tr 10% 90% td(off) tf Page 5 of 6 RJK2062JPK Preliminary Package Dimensions JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Ordering Information Orderable Part Number RJK2062JPK-00-T0 Note: Quantity 360 pcs Shipping Container Box (Tube) The symbol of 2nd "-" is occasionally presented as "#". R07DS0488EJ0100 Rev.1.00 Sep 19, 2012 Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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