RENESAS RJK03L2DNS

Preliminary Datasheet
RJK03L2DNS
Silicon N Channel Power MOS FET with Schottky Barrier Diode
R07DS0779EJ0110
Power Switching
Rev.1.10
May 30, 2012
Features





High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 4.2 m typ. (at VGS = 10 V)
 Pb-free
 Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A
(Package name: HWSON-8)
5 6 7 8
D D D D
5 6 7 8
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
G
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
±20
30
120
30
12
14.4
20
6.25
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50 
3. Tc = 25C
R07DS0779EJ0110 Rev.1.10
May 30, 2012
Page 1 of 6
RJK03L2DNS
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
4.2
5.2
65
2110
345
210
1.5
17
6.6
6.0
4.7
2.9
35.2
Max
—
±0.5
1
2.5
5.1
6.8
—
2955
—
—
3.0
—
—
—
—
—
—
Unit
V
A
mA
V
m
m
S
pF
pF
pF

nC
nC
nC
ns
ns
ns
—
—
—
11.4
0.46
6.6
—
—
—
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 24 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 15 A, VGS = 10 V Note4
ID = 15 A, VGS = 4.5 V Note4
ID = 15 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 30 A
VGS = 10 V, ID = 15 A
VDD  10 V
RL = 0.67
Rg = 4.7 
IF = 2 A, VGS = 0 Note4
IF =30 A, VGS = 0
diF/ dt = 500 A/ s
Notes: 4. Pulse test
R07DS0779EJ0110 Rev.1.10
May 30, 2012
Page 2 of 6
RJK03L2DNS
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
Drain Current ID (A)
Channel Dissipation Pch (W)
40
30
20
10
0
50
100
150
200
1
m
s
10
PW = 10 ms
DC
Operation in
O
pe
1 this area is
ra
tio
limited by RDS(on)
n
Tc = 25 °C
0.1 1 shot Pulse
0.1
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
50
50
4.5 V 2.9 V
10 V
40
Pulse Test
2.8 V
2.7 V
30
Drain Current ID (A)
Drain Current ID (A)
100
2.6 V
20
2.5 V
10
40
VDS = 5 V
Pulse Test
30
20
10
VGS = 2.4 V
25°C
Tc = 75°C
–25°C
Drain to Source Saturation Voltage
VDS(on) (mV)
0
2
4
6
8
10
0
1
2
3
5
4
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
100
200
Pulse Test
Pulse Test
150
30
100
10
VGS = 4.5 V
ID = 10 A
50
10 V
3
5A
2A
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
R07DS0779EJ0110 Rev.1.10
May 30, 2012
1
1
3
10
30
100
300 1000
Drain Current ID (A)
Page 3 of 6
RJK03L2DNS
Preliminary
Static Drain to Source on State Resistance
vs. Temperature
Typical Capacitance vs.
Drain to Source Voltage
15
10000
Pulse Test
3000
Capacitance C (pF)
12
ID = 2 A, 5 A, 10 A
9
VGS = 4.5 V
10 V
3
50
0
25
50
75
100
Crss
VGS = 0
f = 1 MHz
10
20
30
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Reverse Drain Current vs.
Source to Drain Voltage
20
VGS
40
16
VDD = 25 V
10 V
VDS
12
20
8
10
4
VDD = 25 V
10 V
0
0
0
Coss
10
0
100 125 150
ID = 30 A
30
300
30
10
20
30
40
50
50
Reverse Drain Current IDR (A)
0
–25
Drain to Source Voltage VDS (V)
2 A, 5 A, 10 A
Gate to Source Voltage VGS (V)
6
Ciss
1000
10 V
40
Pulse Test
5V
30
20
VGS = 0, –5 V
10
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Gate Charge Qg (nc)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Energy EAS (mJ)
20
16
12
8
4
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0779EJ0110 Rev.1.10
May 30, 2012
Page 4 of 6
RJK03L2DNS
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
PDM
2
0.0
1 ulse
0
.
0
tp
ho
s
1
0.03
0.01
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
EAS =
L
VDS
Monitor
1
L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 10 V
90%
td(on)
R07DS0779EJ0110 Rev.1.10
May 30, 2012
10%
tr
90%
td(off)
tf
Page 5 of 6
RJK03L2DNS
Preliminary
Package Dimensions
3.3 ± 0.1
Previous Code
⎯
MASS[Typ.]
0.022g
2.9 ± 0.1
0.1 Min
3.3 ± 0.1
0.8 Max
+0.15
−0.1
RENESAS Code
PWSN0008JB-A
0.04Max
0Min
Stand-off
0.22 Typ
+0.15
−0.1
0.65 Typ
(2.55)
0.32 ± 0.08
0.4
0.575 Typ
2.27 ± 0.2
0.4
JEITA Package Code
P-HWSON8-2.9x3.1-0.65
1.55 ± 0.2
Package Name
HWSON-8
3.1 ± 0.1
Ordering Information
Orderable Part Number
RJK03L2DNS-00-J5
Quantity
5000 pcs
Shipping Container
Taping
Note: The symbol of 2nd "-" is occasionally presented as "#".
R07DS0779EJ0110 Rev.1.10
May 30, 2012
Page 6 of 6
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