Preliminary Datasheet RJK0629DPK 60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use R07DS1061EJ0200 (Previous: REJ03G1875-0100) Rev.2.00 Apr 09, 2013 Features VDSS: 60 V RDS(on): 4.5 m (Max) ID: 100 A Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 2 D 1. Gate 2. Drain (Flange) 3. Source 1G S 3 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 IAP Note2 Pch Note3 ch-c Tch Tstg Value 60 20 85 340 85 340 55 100 1.25 150 –55 to +150 Unit V V A A A A A W C/W C C Notes: 1. Tch 150C 2. STch = 25C, Tch 150C, L = 100 H 3. Value at Tc = 25C R07DS1061EJ0200 Rev.2.00 Apr 09, 2013 Page 1 of 6 RJK0629DPK Preliminary Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) VDS(on) Static drain to source on state resistance RDS(on) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: tf VDF trr Min 60 20 — — 1.0 — — — — — — — — — — — — Typ — — — — — 161 3.75 4.9 4100 1000 780 85 11 25 20 40 100 Max — — 1 10 2.0 194 4.5 6.6 — — — — — — — — — Unit V V A A V mV m m pF pF pF nC nC nC ns ns ns — — — 40 0.92 50 — 1.2 — ns V ns Test Conditions ID = 100 A, VGS = 0 IG = 100 A, VDS = 0 VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 ID = 1 mA, VDS = 10 V ID = 43A, VGS = 10 V Note4 ID = 43A, VGS = 10 V Note4 ID = 43 A, VGS = 4.5 V Note4 VDS = 10 V, VGS = 0 f = 1 MHz VDD = 25 V, VGS = 10 V, ID = 85 A VDD = 30V, ID= 43A, VGS = 10 V, RG = 4.7 IF = 85 A, VGS = 0 Note4 IF = 85 A, VGS = 0, diF/dt = 100 A/s 4. Pulse test R07DS1061EJ0200 Rev.2.00 Apr 09, 2013 Page 2 of 6 RJK0629DPK Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 ion ID (A) 50 100 150 Case Temperature 0.1 0.01 0.1 200 Tc (°C) 3V 80 60 VGS = 2.7 V 40 20 0 5 ID = 43 A Pulse Test 15 Tc = 175°C 25°C 5 −40°C 0 8 12 Gate to Source Voltage 16 20 VGS (V) −40°C 0.1 0.01 VDS = 10 V Pulse Test 1 2 3 4 Gate to Source Voltage 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) 20 25°C 1 VDS (V) Static Drain to Source on State Resistance vs. Gate to Source Voltage 10 10 0.001 0 10 Drain to Source Voltage R07DS1061EJ0200 Rev.2.00 Apr 09, 2013 VDS (V) Tc = 175°C Tc = 25°C Pulse Test 4 100 100 10 V 5V 0 10 Typical Transfer Characteristics Drain Current ID (A) 100 1 Drain to Source Voltage Typical Output Characteristics Drain Current ID (A) at limited by RDS(on) Tc = 25°C 1 shot Pulse 0 Drain to Source on State Resistance RDS (on) (mΩ) er s m Op Operation in 1 this area is 10 Drain Current μs μs = Channel Dissipation 10 0 s m DC 50 10 PW 100 100 10 150 1 Pch (W) 200 100 Tc = 25°C Pulse Test 10 VGS = 4.5 V 10 V 1 1 100 10 Drain Current ID (A) Page 3 of 6 Preliminary Static Drain to Source on State Resistance vs. Temperature 10000 Pulse Test ID = 43 A Ciss Capacitance C (pF) 16 12 VGS = 4.5 V 8 4 10 V 50 30 0 50 100 150 Coss Crss 300 Tc = 25°C VGS = 0 f = 1 MHz 0 200 5 10 15 20 25 30 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Reverse Drain Current vs. Source to Drain Voltage 20 VGS 16 VDD = 25 V 10 V 5V 12 VDS 20 8 VDD = 25 V 10 V 5V 10 0 1000 Case Temperature Tc (°C) Tc = 25°C ID = 85 A 40 3000 100 0 −50 40 80 4 120 160 0 200 100 Reverse Drain Current IDR (A) 20 Typical Capacitance vs. Drain to Source Voltage Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance RDS(on) (mΩ) RJK0629DPK Tc = 25°C Pulse Test 10 V 80 60 40 VGS = 0, −5 V 20 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Gate Charge Qg (nC) Maximum Avalanche Energy vs. Channel Temperature Derating Avalanche Energy EAS (mJ) 500 IAP = 55 A VDD = 25 V duty < 0.1 % Rg ≥ 50 Ω 400 300 200 100 0 25 50 75 100 125 150 175 Channel Temperature Tch (°C) R07DS1061EJ0200 Rev.2.00 Apr 09, 2013 Page 4 of 6 Preliminary Normalized Transient Thermal Impedance γs (t) RJK0629DPK Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.1 θch – c(t) = γs (t) • θch – c θch – c = 1.25°C/W, Tc = 25°C 0.05 0.01 0.02 0.01 10 μ 1 sh p ot 100 μ uls e PDM D= PW T PW T 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform L VDS Monitor 1 EAS = L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V (BR)DSS Rg IAP VDD D. U. T VDS Vin 15 V ID 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 30 V 90% td(on) R07DS1061EJ0200 Rev.2.00 Apr 09, 2013 10% tr 90% td(off) tf Page 5 of 6 RJK0629DPK Preliminary Package Dimensions JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part No. RJK0629DPK-00-T0 Quantity 360 pcs R07DS1061EJ0200 Rev.2.00 Apr 09, 2013 Shipping Container Box (Tube) Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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