WINNERJOIN MMBTA05LT1

RoHS
MMBTA05LT1
NPN EPITAXIAL SILICON TRANSISTOR
D
T
,. L
AMPLIFIER TANSISTOR
High Collector-Emitter Voltage:Vcbo=60V
* Collector Current: Ic=500mA
* Collector Dissipation: Pc=225mW(Ta=25
1.
1.BASE
2.EMITTER
3.COLLECTOR
ABSOLUTE MAXIMUM RATINGS at Ta=25
Symbol
Rating
Vcbo
60
V
Collector-Emitter Voltage
Vceo
60
V
Emitter-Base Voltage
Vebo
4
V
Collector Current
Ic
500
mA
Collector Dissipation Ta=25 *
PD
225
mW
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55-150
Characteristic
Symbol
R
T
Collector-Base Breakdown Voltage
Collector-Emitter
Breakdown
Voltage#
Emitter-Base Breakdown Voltage
C
E
L
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
E
Base-Emitter On Voltage
BVcbo
60
BVceo
60
BVebo
4
IC
N
Typ
Max
Unit:mm
Test Conditions
V
Ic=100uA Ie=0
V
Ic= 1mA
V
Ie= 100uA Ic=0
Ib=0
Icbo
100
nA
Vcb= 60V Ie=0
Ices
100
nA
Vce= 60V Ib= 0
Hfe1
80
Hfe2
80
250
Vce=1V Ic=10mA
Vce=1V Ic=100mA
0.25
V
Ic=100mA Ib=10mA
Vbe(on)
1.2
V
Ic=100mA Vce=1V
MHz
Vce=2V Ic=10mA
fT
100
f=100MHz
*
Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
#
Pulse Test : Pulse Width
DEVICE MARKING:
Unit
C
O
Vce(sat)
Current Gain-Bandwidth Product
J
E
O
Min
2.9
1.9
0.95 0.95
Collector-Base Voltage
ELECTRICAL CHARACTERISTICS at Ta=25
W
2.4
1.3
Unit
0.4
Characteristic
300uS,Duty cycle
2%
MMBTA05LT1=1H
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]