RoHS 2SC3265LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 D T ,. L O 3 1 2 1. Collector Current:Ic=500mA o 2.4 1.3 0.95 0.95 2.9 1.9 Collector Dissipation:Pc=225mW (Tc=25 C) ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage V CBO Emitter-Base Voltage V EBO V CEO R T Ic Collector Current o PD Collector Dissipation Ta=25 C* Tj Junction Temperature T stg Storage Temperature C E L Electrical Characteristics Characteristic Symbol IC N Symbol Characteristic O C 1.BASE 2.EMITTER 3.COLLECTOR 0.4 Complement to 2SA1298LT1 Rating 40 V 25 V 6 V 500 mA 225 mW 150 O -55-150 O C C o (Ta=25 C) MIN. TYP. MAX. Unit Test Conditions BV CBO 40 V I C =100uA I E =0 Collector-Emitter Breakdown Voltage# BV CEO 25 V I C =1mA I B =0 Emitter-Base Breakdown Voltage BV EBO 6 V I E =100uA I C =0 Collector Cutoff Current I CBO 100 nA V CB =35V, I E =0 Emitter Cutoff Current I EBO 100 nA V EB =6V, I C =0 DC Current Gain h FE1 J E o (Ta=25 C) Unit Collector-Base Breakdown Voltage E Unit:mm V CE =1V, I C =5mA 45 160 300 Collector-Emitter Saturation Voltage V CE(sat) 0.28 0.5 V I C =500mA, I B =50mA Base-Emitter Saturation Voltage V BE(sat) 0.98 1.2 V I C =500mA, I B =50mA Base-Emitter Voltage V BE 0.66 1 V I CE =1V, I C =10mA Output Capacitance C ob 9 PF V CB =10V, I E =0,f=1MHz Current Gain-Bandwidth Product fT DC Current Gain h FE2 85 DC Current Gain h FE3 30 W 100 V CE =1V, I C =50mA V CE =1V, I C =500mA 190 MHz V CE =10V, I C =50mA o *Total Device Dissipation:FR=1X0.75X0.062 in Board ,Derate 25 C # Pulse Test: Pulse Width 300uS ,Duty cycle 2% 2SC3265LTI=A6 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]