WINNERJOIN MMBTA42LT1

RoHS
M M BTA 42 LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
HIGH VOLTGE TRANDIDTOR
1
Complement to MMBTA92LT1
High Collector-Emitter Voltage:Vcbo=300V
Collector current:Ic=500mA
o
Collector Dissipation:Pc=225mW( Ta=25 C )
2
1.
0.95
2.9
1.9
0.95
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
V CBO
V CEO
R
T
V EBO
Emitter-Base Voltage
Ic
Collector Current
o
PD
Collector Dissipation Ta=25 C*
Tj
Junction Temperature
C
E
L
Storage Temperature
Electrical Characteristics
Characteristic
IC
N
ABSOLUTE MAXIMUM RATINGS
O
T stg
Symbol
C
0.4
1.BASE
2.EMITTER
3.COLLECTOR
2.4
1.3
Characteristic
D
T
,. L
O
3
Unit:mm
o
(Ta=25 C)
Rating
Unit
300
V
300
V
6
V
500
mA
225
mW
150
O
-55~150
O
C
C
o
(Ta=25 C)
MIN. TYP. MAX. Unit
Condition
BV CBO
300
V
I C =100 A I E =0
Collector-Emitter Breakdown Voltage#
BV CEO
300
V
I C =1mA I B =0
Emitter-Base Breakdown Voltage
BV EBO
6
V
I E =100 A I C =0
Collector Cutoff Current
I CBO
100
nA
V CB =200V, V e =0
Collector Cutoff Current
I EBO
100
nA
V EB =6V, I C =0
DC Current Gain
H FE
250
Collector-Emitter Saturation Voltage
V CE(sat)
0.5
V
I C =20mA, I B =2mA
Base-Emitter On Voltage
V BE(sat)
0.9
V
I C =20mA, I B =2mA
3
PF
V CB =10V, I E =0 f=1MHz
Collector-Base Breakdown Voltage
J
E
E
W
Collector-Base Capacitance
C ob
Current Gain-Bandwidth Product
fT
40
V CE =10V, I C =10mA
MHz V CE =20V I C =10mA
f=100MHz
50
o
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C
# Pulse Test: Pulse Width <300uS Duty cycle <2%
DEVICE MARKING:
MMBTA42LT1=1D
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
RoHS
M M BTA 42 LT1
Typical Characteristics
120
h FE , CURRENT GAIN
100
80
。
+25 C
60
40
。
-55 C
20
0
0.1
1.0
10
I C, COLLECTOR CURRENT (mA)
IC
DC Current Gain
N
V,VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
R
T
0.6
0.4
0.2
0.0
0.1
D
T
,. L
O
V CE =10Vdc
。
T J =125 C
C
E
L
1.0
10
O
C
100
。
V C E(sat) @ 25 C, I C I B = 10
。
V C E(sat) @125 C, I C I B = 10
。
V C E(sat) @-55 C, I C I B = 10
。
V B E(sat) @ 25 C, I C I B = 10
。
V B E(sat) @125 C, I C I B = 10
。
V B E(sat) @-55 C, I C I B = 10
。
V BE(sat) @ 25 C, V CE = 10V
。
V BE(sat) @125 C, V CE = 10V
。
V BE(sat) @-55 C, V CE = 10V
100
I C, COLLECTOR CURRENT (mA)
W
J
E
E
F T ,CURRENT-GAIN-BAINDWIDTH (MHz)
“On” Voltages
80
70
60
50
40
。
30
T J =25 C
V CE =20V
f=20MHz
20
10
1.0
2.0
3.0
5.0 7.0 10
20
30
50 70 100
I C, COLLECTOR CURRENT (mA)
Current-Gain-- Bandwidth
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]