RoHS M M BTA 42 LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 HIGH VOLTGE TRANDIDTOR 1 Complement to MMBTA92LT1 High Collector-Emitter Voltage:Vcbo=300V Collector current:Ic=500mA o Collector Dissipation:Pc=225mW( Ta=25 C ) 2 1. 0.95 2.9 1.9 0.95 Symbol Collector-Base Voltage Collector-Emitter Voltage V CBO V CEO R T V EBO Emitter-Base Voltage Ic Collector Current o PD Collector Dissipation Ta=25 C* Tj Junction Temperature C E L Storage Temperature Electrical Characteristics Characteristic IC N ABSOLUTE MAXIMUM RATINGS O T stg Symbol C 0.4 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 Characteristic D T ,. L O 3 Unit:mm o (Ta=25 C) Rating Unit 300 V 300 V 6 V 500 mA 225 mW 150 O -55~150 O C C o (Ta=25 C) MIN. TYP. MAX. Unit Condition BV CBO 300 V I C =100 A I E =0 Collector-Emitter Breakdown Voltage# BV CEO 300 V I C =1mA I B =0 Emitter-Base Breakdown Voltage BV EBO 6 V I E =100 A I C =0 Collector Cutoff Current I CBO 100 nA V CB =200V, V e =0 Collector Cutoff Current I EBO 100 nA V EB =6V, I C =0 DC Current Gain H FE 250 Collector-Emitter Saturation Voltage V CE(sat) 0.5 V I C =20mA, I B =2mA Base-Emitter On Voltage V BE(sat) 0.9 V I C =20mA, I B =2mA 3 PF V CB =10V, I E =0 f=1MHz Collector-Base Breakdown Voltage J E E W Collector-Base Capacitance C ob Current Gain-Bandwidth Product fT 40 V CE =10V, I C =10mA MHz V CE =20V I C =10mA f=100MHz 50 o *Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C # Pulse Test: Pulse Width <300uS Duty cycle <2% DEVICE MARKING: MMBTA42LT1=1D WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS M M BTA 42 LT1 Typical Characteristics 120 h FE , CURRENT GAIN 100 80 。 +25 C 60 40 。 -55 C 20 0 0.1 1.0 10 I C, COLLECTOR CURRENT (mA) IC DC Current Gain N V,VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 R T 0.6 0.4 0.2 0.0 0.1 D T ,. L O V CE =10Vdc 。 T J =125 C C E L 1.0 10 O C 100 。 V C E(sat) @ 25 C, I C I B = 10 。 V C E(sat) @125 C, I C I B = 10 。 V C E(sat) @-55 C, I C I B = 10 。 V B E(sat) @ 25 C, I C I B = 10 。 V B E(sat) @125 C, I C I B = 10 。 V B E(sat) @-55 C, I C I B = 10 。 V BE(sat) @ 25 C, V CE = 10V 。 V BE(sat) @125 C, V CE = 10V 。 V BE(sat) @-55 C, V CE = 10V 100 I C, COLLECTOR CURRENT (mA) W J E E F T ,CURRENT-GAIN-BAINDWIDTH (MHz) “On” Voltages 80 70 60 50 40 。 30 T J =25 C V CE =20V f=20MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C, COLLECTOR CURRENT (mA) Current-Gain-- Bandwidth WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]