WINNERJOIN 2SC1815LT1

RoHS
2SC1815LT1
NPN EPITAXIAL SILICON TRANSISTOR
*
*
D
T
,. L
Complement to 2SA1015
Collector Current :Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol
Rating
Unit
1.
60
V
Collector-Emitter Voltage
Vceo
50
V
Emitter-Base Voltage
Vebo
5
V
Collector Current
Ic
Collector Dissipation Ta=25 *
PD
225
Junction Temperature
Tj
150
Storage Temperature
Tstg
mA
mW
Symbol
Min
Collector-Base Breakdown Voltage
BVcbo
60
Collector-Emitter
BVceo
50
Breakdown
R
T
Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Icbo
Emitter-Base Cutoff Current
C
E
L
DC Current Gain
BVebo
Collector-Emitter Saturation Voltage
Iebo
Hfe
IC
-55-150
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
2.4
1.3
O
5.0
N
Typ
Max
70
Vce(sat)
O
Unit:mm
Test Conditions
V
Ic=100uA Ie=0
V
Ic= 1mA
V
Ie= 100uA Ic=0
100
nA
Vcb= 50V Ie=0
100
nA
Veb= 3V Ic= 0
700
0.30
*
Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
#
Pulse Test : Pulse Width
300uS,Duty cycle
Unit
C
1.BASE
2.EMITTER
3.COLLECTOR
0.4
Vcbo
2.9
1.9
0.95 0.95
Collector-Base Voltage
Ib=0
Vce= 6V Ic= 2mA
V
Ic= 100mA Ib= 10mA
2%
E
DEVICE MARKING:
2SC1815=L6
J
E
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]