WINNERJOIN 2SA1162

RoHS
2SA1162
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
LOW FREQRENCY,LOW NOISE AMPLIFIER
1
Complemen to 2SC2712
Collector-current:Ic=-100mA
2
1.
1.BASE
2.EMITTER
3.COLLECTOR
0.95
0.95
2.9
1.9
2.4
1.3
Symbol
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
V CBO
V CEO
R
T
V EBO
Emitter-Base Voltage
Ic
Collector Current
o
Collector Dissipation Ta=25 C*
Junction Temperature
C
E
L
Electrical Characteristics
Parameter
Tj
O
T stg
Symbol
o
Rating
Unit
-50
V
-45
V
-5
V
-100
mA
225
mW
150
O
-55~150
O
o
Condition
BV CBO
-50
V
I C =-100 A I E =0
Collector-Emitter Breakdown Voltage#
BV CEO
-45
V
I C =-1mA I B =0
Emitter-Base Breakdown Voltage
BV EBO
-5
V
I E =-100 A I C =0
Collector -Base Cutoff Current
I CBO
-50
nA
V CB =-50V, V C =0
Emitter-Base Cutoff Current
I EBO
-50
nA
V CB =-5V, I C =0
DC Current Gain
H FE
E
C
C
(Ta=25 C)
MIN. TYP. MAX. Unit
60
Unit:mm
(Ta=25 C)
Collector-Base Breakdown Voltage
J
E
W
PD
IC
N
ABSOLUTE MAXIMUM RATINGS
C
0.4
Collector-Emiller Voltage:V CE =-45 V
Storage Temperature
D
T
,. L
O
3
200
600
V CE =-5V, I C =1mA
Collector-Emitter Saturation Voltage
V CE(sat)
-0.20 -0.7
V
I C =-100mA, I B =-5mA
Base-Emitter Saturation Voltage
V BE(sat)
-0.82 100
I C =-100mA, I B =-5mA
Base-Emitter on Voltage
V BE(on)
V
V
Output Capacitance
C ob
PF
V CB =-10V, I E =0 f=1MHz
Current Gain-Bandwidth Product
fT
Noise Figure
NF
-0.6 -0.67 -0.75
4.5
7
MHz V CE =-5V I C =-10mA
100 190
0.7
V C e =-5V, I C =-2mA
dB
10
V CE =-5V I C =-0.2mA
f=1MHz Rs=1Kohm
o
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C
# Pulse Test: Pulse Width 300uS Duty cycle 2%
DEVICE MARKING:
2SA1162=M6
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]