RoHS 2SA1162 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 LOW FREQRENCY,LOW NOISE AMPLIFIER 1 Complemen to 2SC2712 Collector-current:Ic=-100mA 2 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.95 0.95 2.9 1.9 2.4 1.3 Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage V CBO V CEO R T V EBO Emitter-Base Voltage Ic Collector Current o Collector Dissipation Ta=25 C* Junction Temperature C E L Electrical Characteristics Parameter Tj O T stg Symbol o Rating Unit -50 V -45 V -5 V -100 mA 225 mW 150 O -55~150 O o Condition BV CBO -50 V I C =-100 A I E =0 Collector-Emitter Breakdown Voltage# BV CEO -45 V I C =-1mA I B =0 Emitter-Base Breakdown Voltage BV EBO -5 V I E =-100 A I C =0 Collector -Base Cutoff Current I CBO -50 nA V CB =-50V, V C =0 Emitter-Base Cutoff Current I EBO -50 nA V CB =-5V, I C =0 DC Current Gain H FE E C C (Ta=25 C) MIN. TYP. MAX. Unit 60 Unit:mm (Ta=25 C) Collector-Base Breakdown Voltage J E W PD IC N ABSOLUTE MAXIMUM RATINGS C 0.4 Collector-Emiller Voltage:V CE =-45 V Storage Temperature D T ,. L O 3 200 600 V CE =-5V, I C =1mA Collector-Emitter Saturation Voltage V CE(sat) -0.20 -0.7 V I C =-100mA, I B =-5mA Base-Emitter Saturation Voltage V BE(sat) -0.82 100 I C =-100mA, I B =-5mA Base-Emitter on Voltage V BE(on) V V Output Capacitance C ob PF V CB =-10V, I E =0 f=1MHz Current Gain-Bandwidth Product fT Noise Figure NF -0.6 -0.67 -0.75 4.5 7 MHz V CE =-5V I C =-10mA 100 190 0.7 V C e =-5V, I C =-2mA dB 10 V CE =-5V I C =-0.2mA f=1MHz Rs=1Kohm o *Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C # Pulse Test: Pulse Width 300uS Duty cycle 2% DEVICE MARKING: 2SA1162=M6 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]