RoHS 2SC2714 NPN EPITAXIAL SILICON TRANSISTOR D T ,. L AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Vcbo 40 V Collector-Emitter Voltage Vceo 30 V Emitter-Base Voltage Vebo 4.0 V Collector Current Ic 20 mA Collector Dissipation Ta=25 * PD 100 mW Junction Temperature Tj 150 Storage Temperature Tstg -55-150 Characteristic Symbol R T Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage# Emitter-Base Breakdown Voltage C E L Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Capacitance E Current Gain-Bandwidth Product J E O Min Bvcbo 40 Bvceo 30 Bvebo 4.0 0.95 2.9 1.9 Collector-Base Voltage ELECTRICAL CHARACTERISTICS at Ta=25 2.4 1.3 Unit IC N Typ 0.4 Symbol 0.95 Characteristic Max Unit C O Unit:mm Test Conditions V Ic=100uA Ie=0 V Ic= 1mA V Ie= 100uA Ic=0 Ib=0 Icbo 500 nA Vcb= 18V Ie=0 Iebo 500 nA Veb= 4V Ic= 0 Hfe 40 200 Vce(sat) Cob 1.3 fT 550 0.40 V 1.7 PF * Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . # Pulse Test : Pulse Width 300uS,Duty cycle Vce= 6V Ic= 1mA MHz Ic= 10mA Ib= 1mA Vcb=10V Ie=0 f=1MHZ Vce= 6V Ic= 1mA 2% W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]