RoHS M M B TA 9 2 LT 1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 HIGH VOLTGE TRANDIDTOR 1 Complement to MMBTA42LT1 High Collector-Emitter Voltage:Vcbo=-300V Collector current:Ic=-500mA o Collector Dissipation:Pc=225mW( Ta=25 C ) 2 1. 0.95 2.9 1.9 0.95 ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage V CBO Emitter-Base Voltage V EBO V CEO R T Ic Collector Current o PD Collector Dissipation Ta=25 C* Tj Junction Temperature Storage Temperature C E L Electrical Characteristics Characteristic IC N Symbol O T stg Symbol C 0.4 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 Characteristic D T ,. L O 3 Rating Unit:mm o (Ta=25 C) Unit -300 V -300 V -5 V -500 mA 225 mW 150 O -55~150 O C C o (Ta=25 C) MIN. TYP. MAX. Unit Condition BV CBO -300 V I C =-100 A I E =0 Collector-Emitter Breakdown Voltage# BV CEO -300 V I C =-1mA I B =0 Emitter-Base Breakdown Voltage BV EBO -5 V I E =-100 A I C =0 Collector Cutoff Current I CBO Collector Cutoff Current I EBO DC Current Gain H FE Collector-Emitter Saturation Voltage V CE(sat) -0.5 V I C =-20mA, I B =-2mA Base-Emitter On Voltage V BE(sat) -0.9 V I C =-20mA, I B =-2mA 6 PF V CB =-20V, I E =0 f=100MHz Collector-Base Breakdown Voltage J E E W Collector-Base Capacitance C ob Current Gain-Bandwidth Product fT 40 50 -250 nA V CB =-200V, V e =0 -100 nA V CB =-3V, I C =0 250 V CE =-10V, I C =-10mA MHz V CE =-20V I C =-10mA f=100MHz 100 o *Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C # Pulse Test: Pulse Width <300uS Duty cycle < 2% DEVICE MARKING: MMBTA92LT1=2D WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS M M BTA9 2 LT 1 Typical Characteristics 300 h FE , CURRENT GAIN T J =+25 C 250 200 。 25 C 150 100 。 55 C 50 0 0.1 IC 1.0 10 I C, COLLECTOR CURRENT (mA) DC Current Gain V,VOLTAGE (VOLTS) 1.4 N 1.2 1.0 0.8 R T 0.6 0.4 0.2 0.0 0.1 D T ,. L O V CE =10Vdc 。 C E L 1.0 10 O C 100 。 V C E(sat) @ 25 C, I C I B = 10 。 V C E(sat) @125 C, I C I B = 10 。 V C E(sat) @-55 C, I C I B = 10 。 V B E(sat) @ 25 C, I C I B = 10 。 V B E(sat) @125 C, I C I B = 10 。 V B E(sat) @-55 C, I C I B = 10 。 V BE(sat) @ 25 C, V CE = 10V 。 V BE(sat) @125 C, V CE = 10V 。 V BE(sat) @-55 C, V CE = 10V 100 I C, COLLECTOR CURRENT (mA) J E W E F T ,CURRENT-GAIN-BANDWIDTH (MHz) “On” Voltages 150 130 110 90 70 。 50 T J =25 C V CE =20V f=20MHz 30 10 1 WEJ ELECTRONIC CO. 3 5 7 9 11 13 15 17 19 21 I C, COLLECTOR CURRENT (mA) Current-Gain-- Bandwidth Http:// www.wej.cn E-mail:[email protected]