IXFC52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 24A Ω 75mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 24 A IDM TC = 25°C, pulse width limited by TJM 150 A IA TC = 25°C 52 A EAS TC = 25°C 1 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 100 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 11..66 / 2.5..14.6 N/lb. 2 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting force t = 1min t = 1s Weight G D S G = Gate S = Source Isolated Tab D = Drain Features UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Avanlache rated Fast intrinsic diode Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 300 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 26A, Note 1 © 2008 IXYS CORPORATION, All rights reserved V 5.0 V ±100 nA TJ = 125°C 25 μA 1 mA Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives 75 mΩ DS99246F(5/08) IXFC52N30P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 20 VDS = 10V, ID = 26A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 52A RG = 4Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 26A Qgd 30 S 3490 pF 550 pF 130 pF 24 ns 22 ns 60 ns 20 ns 110 nC 25 nC 53 nC ISOPLUS220TM (IXFC) Outline Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3. 1.25 °C/W RthJC RthCS 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 52 A Repetitive, pulse width limited by TJM 150 A VSD IF = 52A, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 25A, -di/dt = 100A/μs 800 7 VR = 100V, VGS = 0V Ref: IXYS CO 0177 R0 200 ns nC A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFC52N30P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 150 55 VGS = 10V 8V 50 45 VGS = 10V 9V 125 7V 35 I D - Amperes I D - Amperes 40 30 25 6V 20 100 8V 75 7V 50 15 10 5V 5 5V 0 0 0.0 0.5 1.0 1.5 2.0 VD S 2.5 3.0 3.5 4.0 4.5 5.0 0 4 8 12 VD - Volts Fig. 3. Output Characteristics @ 125ºC 16 S 20 24 28 - Volts Fig. 4. RDS(on) Normalized to I D = 26A Value vs. Junction Temperature 3.2 55 VGS = 10V 8V 50 R D S (on) - Normalized 40 7V 35 30 25 6V 20 15 10 VGS = 10V 2.8 45 I D - Amperes 6V 25 5V 2.4 2.0 ID = 52A ID = 26A 1.6 1.2 0.8 5 0.4 0 0 1 2 3 4 5 VD S 6 7 8 9 -50 10 -25 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to I D = 26A Value vs. Drain Current 27 3.8 24 VGS = 10V 3.4 21 TJ = 125ºC 3.0 I D - Amperes R D S (on) - Normalized 0 - Volts 2.6 2.2 1.8 TJ = 25ºC 1.4 18 15 12 9 6 3 1.0 0 0.6 0 25 50 I 75 D 100 - Amperes © 2008 IXYS CORPORATION, All rights reserved 125 150 -50 -25 0 25 50 75 100 T C - Degrees Centigrade IXFC52N30P Fig. 8. Transconductance Fig. 7. Input Admittance 100 60 90 55 50 80 45 70 60 50 TJ = 125ºC 25ºC -40ºC 40 30 25ºC 40 g f s - Siemens I D - Amperes TJ = - 40ºC 35 125ºC 30 25 20 15 20 10 10 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 10 20 30 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage D 50 60 70 80 90 100 - Amperes Fig. 10. Gate Charge 10 160 VDS = 150V ID = 26A IG = 10m A 9 140 8 120 7 100 VG S - Volts I S - Amperes 40 I 80 60 6 5 4 3 TJ = 125ºC 40 2 TJ = 25ºC 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 10 20 30 40 50 60 70 80 90 V S D - Volts Q G - nanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 10000 TJ = 25ºC TJ = 150ºC Single Pulse f = 1MHz 1000 I D - Amperes Ciss Capacitance - pF 10 11 12 0 0 0 Coss RDS (on) Limit 100 25µs 1m s 10 10ms 100ms Crss DC 1 100 0 5 10 15 VD 20 S 25 30 35 40 - Volts 10 100 VD S 1000 - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_52N30P (6S)6-13-06-C IXFC52N30P Fig. 13. Maximum Transient Thermal Impedance 1.00 Z (t h) J C - (ºC/W ) 10.00 0.10 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_52N30P (6S)6-13-06-C