IXFR140N30P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 70A Ω 26mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IA 70 A 300 A TC = 25°C 70 A EAS TC = 25°C 5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 20..120 / 4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting force t = 1min t = 1s Weight Isolated Tab G = Gate S = Source Features z z z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 70A, Note 1 © 2008 IXYS CORPORATION, All rights reserved 5.0 V UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z V D = Drain z z Easy to mount Space savings High power density ±200 nA 25 μA 1 mA TJ = 125°C 20 26 mΩ DS99570F(5/08) IXFR140N30P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 50 VDS = 20V, ID = 70A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 70A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 70A Qgd 90 S 14.8 nF 1830 pF 55 pF 30 ns 30 ns 100 ns 20 ns 185 nC 72 nC 60 nC ISOPLUS247 (IXFR) Outline 0.42 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 140 A ISM Repetitive, pulse width limited by TJM 560 A VSD IF = 70A, VGS = 0V, Note 1 1.3 V trr QRM IRM IF = 25A, -di/dt = 100A/μs 0.6 6.0 VR = 100V, VGS = 0V 200 ns μC A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR140N30P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 140 280 VGS = 10V 8V 120 100 200 7V ID - Amperes ID - Amperes VGS = 10V 8V 240 80 60 6V 160 7V 120 6V 40 80 20 40 5V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 140 12 14 16 18 20 3.2 VGS = 10V 8V 7V VGS = 10V 2.8 RDS(on) - Normalized 120 100 ID - Amperes 10 Fig. 4. RDS(on) Normalized to ID = 70A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 80 6V 60 40 5V 20 2.4 I D = 140A 2.0 I D = 70A 1.6 1.2 0.8 0 0.4 0 1 2 3 4 5 6 7 8 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 70A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.0 80 2.8 VGS = 10V 70 TJ = 125ºC 2.6 60 2.4 ID - Amperes RDS(on) - Normalized 8 VDS - Volts VDS - Volts 2.2 2.0 1.8 1.6 1.4 50 40 30 20 1.2 TJ = 25ºC 10 1.0 0.8 0 0 40 80 120 160 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 200 240 280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFR140N30P Fig. 8. Transconductance Fig. 7. Input Admittance 180 140 160 120 140 g f s - Siemens ID - Amperes 100 120 TJ = 125ºC 25ºC - 40ºC 100 80 TJ = - 40ºC 25ºC 125ºC 80 60 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 200 160 180 200 Fig. 10. Gate Charge 10 300 9 VDS = 150V 8 I G = 10mA I D = 70A 250 7 200 VGS - Volts IS - Amperes 80 ID - Amperes 150 100 TJ = 125ºC 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 20 40 VSD - Volts 60 80 100 120 140 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 100,000 RDS(on) Limit 10,000 25µs 1,000 ID - Amperes Capacitance - PicoFarads Ciss Coss 100 100µs 1ms 10 10ms 100 TJ = 150ºC DC TC = 25ºC Single Pulse Crss f = 1 MHz 1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 VDS - Volts 1000 IXFR140N30P Fig. 13. Maximum Transient Thermal Impedance Z (th )J C - ºC / W 1.000 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_140N30P (93)5-13-08-B