IXYS IXFR140N30P

IXFR140N30P
PolarTM Power MOSFET
HiPerFETTM
VDSS
ID25
RDS(on)
trr
(Electrically Isolated Back Surface)
=
=
≤
≤
300V
70A
Ω
26mΩ
200ns
N-Channel Enhancement Mode
Avalanche Rated
ISOPLUS247 (IXFR)
E153432
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
300
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
300
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
IDM
TC = 25°C, pulse width limited by TJM
IA
70
A
300
A
TC = 25°C
70
A
EAS
TC = 25°C
5
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
300
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
2500
3000
V~
V~
20..120 / 4.5..27
N/lb.
5
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
Md
Mounting force
t = 1min
t = 1s
Weight
Isolated Tab
G = Gate
S = Source
Features
z
z
z
z
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
BVDSS
VGS = 0V, ID = 3mA
300
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 70A, Note 1
© 2008 IXYS CORPORATION, All rights reserved
5.0
V
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Advantages
z
V
D = Drain
z
z
Easy to mount
Space savings
High power density
±200 nA
25 μA
1 mA
TJ = 125°C
20
26 mΩ
DS99570F(5/08)
IXFR140N30P
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
gfs
50
VDS = 20V, ID = 70A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 70A
RG = 1Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 70A
Qgd
90
S
14.8
nF
1830
pF
55
pF
30
ns
30
ns
100
ns
20
ns
185
nC
72
nC
60
nC
ISOPLUS247 (IXFR) Outline
0.42 °C/W
RthJC
RthCS
0.15
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
140
A
ISM
Repetitive, pulse width limited by TJM
560
A
VSD
IF = 70A, VGS = 0V, Note 1
1.3
V
trr
QRM
IRM
IF = 25A, -di/dt = 100A/μs
0.6
6.0
VR = 100V, VGS = 0V
200 ns
μC
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFR140N30P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
140
280
VGS = 10V
8V
120
100
200
7V
ID - Amperes
ID - Amperes
VGS = 10V
8V
240
80
60
6V
160
7V
120
6V
40
80
20
40
5V
5V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
140
12
14
16
18
20
3.2
VGS = 10V
8V
7V
VGS = 10V
2.8
RDS(on) - Normalized
120
100
ID - Amperes
10
Fig. 4. RDS(on) Normalized to ID = 70A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
80
6V
60
40
5V
20
2.4
I D = 140A
2.0
I D = 70A
1.6
1.2
0.8
0
0.4
0
1
2
3
4
5
6
7
8
-50
-25
0
VDS - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 70A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
3.0
80
2.8
VGS = 10V
70
TJ = 125ºC
2.6
60
2.4
ID - Amperes
RDS(on) - Normalized
8
VDS - Volts
VDS - Volts
2.2
2.0
1.8
1.6
1.4
50
40
30
20
1.2
TJ = 25ºC
10
1.0
0.8
0
0
40
80
120
160
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
200
240
280
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXFR140N30P
Fig. 8. Transconductance
Fig. 7. Input Admittance
180
140
160
120
140
g f s - Siemens
ID - Amperes
100
120
TJ = 125ºC
25ºC
- 40ºC
100
80
TJ = - 40ºC
25ºC
125ºC
80
60
60
40
40
20
20
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
20
40
60
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
100
120
140
160
180
200
160
180
200
Fig. 10. Gate Charge
10
300
9
VDS = 150V
8
I G = 10mA
I D = 70A
250
7
200
VGS - Volts
IS - Amperes
80
ID - Amperes
150
100
TJ = 125ºC
6
5
4
3
TJ = 25ºC
2
50
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
20
40
VSD - Volts
60
80
100
120
140
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1,000
100,000
RDS(on) Limit
10,000
25µs
1,000
ID - Amperes
Capacitance - PicoFarads
Ciss
Coss
100
100µs
1ms
10
10ms
100
TJ = 150ºC
DC
TC = 25ºC
Single Pulse
Crss
f = 1 MHz
1
10
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
100
VDS - Volts
1000
IXFR140N30P
Fig. 13. Maximum Transient Thermal Impedance
Z (th )J C - ºC / W
1.000
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: F_140N30P (93)5-13-08-B